The STTH20W02C uses ST Turbo 2 200 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST’s TO-247, this device offers high power
integration for all welding machines and industrial
applications.
A1
A2
A1
TO-247
STTH20W02CW
Table 1.Device summary
SymbolValue
I
F(AV)
V
RRM
(typ)20 ns
t
rr
T
j
V
(typ)0.89 V
F
K
A2
K
2 x 10 A
200 V
175 °C
May 2012Doc ID 023126 Rev 11/8
This is information on a product in full production.
www.st.com
8
CharacteristicsSTTH20W02C
1 Characteristics
Table 2.Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
SymbolParameterValueUnit
V
I
F(RMS)
I
F(AV)
I
FSM
T
Table 3.Thermal resistance
SymbolParameterValueUnit
Repetitive peak reverse voltage200V
RRM
RMS forward current20A
= 120 °CPer diode 10
T
Average forward current, δ = 0.5
c
T
= 110 °CPer device20
c
Surge non repetitive forward currenttp = 10 ms sinusoidal 80A
Storage temperature range-65 to + 175° C
stg
Maximum operating junction temperature+ 175° C
T
j
A
R
R
Junction to case
th(j-c)
Coupling1°C / W
th(c)
Total
2.5°C / W
When diodes 1 and 2 are used simultaneously:
Per diode 4°C / W
Tj
(diode 1)
Table 4.Static electrical characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
IR
= P
(diode 1)
(1)
Reverse leakage current
(2)
Forward voltage drop
F
x R
(Per diode) + P
th(j-c)
VR = V
= 10 A
I
F
= 20 A
I
F
x Rth(c)
RRM
(diode 2)
T
= 25 °C
j
= 125° C330
T
j
= 25° C
T
j
T
= 150 °C0.891.05
j
= 25° C
T
j
T
= 150° C1.101.30
j
5
1.20
1.40
To evaluate the conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.025 I
F2(RMS)
µA
V
2/8Doc ID 023126 Rev 1
STTH20W02CCharacteristics
(A)
Table 5.Dynamic electrical characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
Q
S
I
RM
factor
t
V
Reverse recovery current
Reverse recovery charge150nC
RR
= 125 °C
T
j
Softness factor0.4
Reverse recovery timeTj = 25 °C
rr
t
Forward recovery time
fr
Forward recovery voltage1.62.4V
FP
Tj = 25 °C
Figure 1.Average forward power dissipation
versus average forward current
IF = 10 A, VR = 160 V
dIF/dt = -200 A/µs
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
IF = 10 A, VFR = 1 V
/dt = 100 A/µs
dI
F
Figure 2.Forward voltage drop versus
forward current (per diode)
79 A
2025ns
110ns
(per diode)
P(W)
F(AV)
16
14
12
10
8
6
4
2
0
02468101214
δ = 0.05
δ1= 0.
δ = 0.2
T
= tp/T
δ
δ = 0.5
tp
Figure 3.Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-041.E-031.E-021.E-011.E+00
δ = 1
I
tp(s)
F(AV)
(A)
IFM(A)
100.0
= 150°C
T
j
(Maximum values)
10.0
Tj=150 °C
(Typical values)
1.0
0.1
0.00.51.01.52.02.53.0
T
°C
= 25
j
(Maximum values)
VFM(V)
Figure 4.Peak reverse recovery current
versus dI
/dt (typical values, per
F
diode)
I
RM
16
I
= I
F
F(AV)
V
= 160 V
R
14
= 125
T
°C
j
12
10
8
6
4
2
0
050100150200250 300 350400450500
dIF/dt(A/µs)
Doc ID 023126 Rev 13/8
CharacteristicsSTTH20W02C
Figure 5.Reverse recovery time versus dIF/dt
(typical values, per diode)
trr(ns)
70
60
50
40
30
20
10
0
050100 150200 250 300350400450 500
I
= I
F
F(AV)
V
= 160 V
R
= 125
T
j
dIF/dt(A/µs)
°C
Figure 7.Relative variations of dynamic
parameters versus junction
temperature
1.4
S
1.2
FACTOR
1.0
0.8
I
RM
0.6
0.4
Q
RR
0.2
0.0
255075100125
reference:T
I
V
= I
F
= 160 V
R
= 125
j
F(AV)
°C
Tj(°C)
Figure 6.Reverse recovery charges versus
dI
/dt (typical values, per diode)
F
QRR(nC)
300
I
= I
F
F(AV)
V
= 160 V
R
250
= 125
T
°C
j
200
150
100
50
dIF/dt(A/µs)
0
050100 150 200 250300 350 400 450 500
Figure 8.Reverse recovery softness factor
versus dI
/dt (typical values, per
F
diode)
S factor
0.8
I
= I
F
F(AV)
V
0.7
= 160 V
R
= 125
T
°C
j
0.6
0.5
0.4
0.3
0.2
0.1
0.0
050100 150200 250300 350 400450 500
dIF/dt(A/µs)
4/8Doc ID 023126 Rev 1
STTH20W02CCharacteristics
Figure 9.Forward recovery time versus dIF/dt
(typical values, per diode)
Figure 10. Transient peak forward voltage
versus dI
/dt (typical values, per
F
diode)
tfr(ns)
100
80
60
40
20
I= I
FF(AV)
V = 1 V
FR
T = 125 °C
j
dIF/dt(A/µs)
0
050100 150 200 250300 350 400 450 500
VFP(V)
5
I
= I
F
F(AV)
°
= 125
T
C
j
4
3
2
1
dIF/dt(A/µs)
0
050100150200250300350 400450 500
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 6.TO-247 dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
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