ST STTH20W02C User Manual

Features

STTH20W02C

Turbo 2 ultrafast high voltage rectifier

Datasheet − production data

■ Ultrafast switching

■ Low reverse recovery current

■ Low thermal resistance

■ Reduces switching losses

■ ECOPACK

®

2 compliant component

Description

The STTH20W02C uses ST Turbo 2 200 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST’s TO-247, this device offers high power
integration for all welding machines and industrial
applications.

A1

A2

A1

TO-247

STTH20W02CW

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(typ) 20 ns

t

rr

T

j

V

(typ) 0.89 V

F

K

A2

K

2 x 10 A

200 V

175 °C

May 2012 Doc ID 023126 Rev 1 1/8

This is information on a product in full production.

www.st.com

8

Characteristics STTH20W02C

1 Characteristics

Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

T

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 200 V

RRM

RMS forward current 20 A

= 120 °C Per diode 10

T

Average forward current, δ = 0.5

c

T

= 110 °C Per device 20

c

Surge non repetitive forward current tp = 10 ms sinusoidal 80 A
Storage temperature range -65 to + 175 ° C

stg

Maximum operating junction temperature + 175 ° C

T

j

A

R

R

Junction to case

th(j-c)

Coupling 1 °C / W

th(c)

Total

2.5 °C / W

When diodes 1 and 2 are used simultaneously:

Per diode 4 °C / W

Tj

(diode 1)

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

IR

= P

(diode 1)

(1)

Reverse leakage current

(2)

Forward voltage drop

F

x R

(Per diode) + P

th(j-c)

VR = V

= 10 A

I

F

= 20 A

I

F

x Rth(c)

RRM

(diode 2)

T

= 25 °C

j

= 125° C 3 30

T

j

= 25° C

T

j

T

= 150 °C 0.89 1.05

j

= 25° C

T

j

T

= 150° C 1.10 1.30

j

5

1.20

1.40

To evaluate the conduction losses use the following equation:
P = 0.8 x I

F(AV)

+ 0.025 I

F2(RMS)

µA

V

2/8 Doc ID 023126 Rev 1

STTH20W02C Characteristics

(A)

Table 5. Dynamic electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

Q

S

I

RM

factor

t

V

Reverse recovery current

Reverse recovery charge 150 nC

RR

= 125 °C

T

j

Softness factor 0.4

Reverse recovery time Tj = 25 °C

rr

t

Forward recovery time

fr

Forward recovery voltage 1.6 2.4 V

FP

Tj = 25 °C

Figure 1. Average forward power dissipation

versus average forward current

IF = 10 A, VR = 160 V
dIF/dt = -200 A/µs

IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs

IF = 10 A, VFR = 1 V

/dt = 100 A/µs

dI

F

Figure 2. Forward voltage drop versus

forward current (per diode)

79 A

20 25 ns

110 ns

(per diode)

P(W)

F(AV)

16

14

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14

δ = 0.05

δ1= 0.

δ = 0.2

T

= tp/T

δ

δ = 0.5

tp

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

δ = 1

I

tp(s)

F(AV)

(A)

IFM(A)

100.0

= 150°C

T

j

(Maximum values)

10.0

Tj=150 °C

(Typical values)

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

T

°C

= 25

j

(Maximum values)

VFM(V)

Figure 4. Peak reverse recovery current

versus dI

/dt (typical values, per

F

diode)

I

RM

16

I

= I

F

F(AV)

V

= 160 V

R

14

= 125

T

°C

j

12

10

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Doc ID 023126 Rev 1 3/8