BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features:
•Integrated High−Voltage Active Clamp
•Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the −40°C to +125°C Temperature Range
•Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
•High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range
•Design Guarantees Operation in SOA at All Times
•Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
• Pb−Free Packages are Available*
MAXIMUM RATINGS
|
Rating |
Symbol |
Max |
Unit |
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Collector−Emitter Sustaining Voltage |
VCEO |
350 |
Vdc |
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Collector−Emitter Voltage |
VEBO |
6.0 |
Vdc |
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Collector Current |
− Continuous |
IC |
10 |
Adc |
|
− Peak |
ICM |
20 |
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Base Current |
− Continuous |
IB |
3.0 |
Adc |
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− Peak |
IBM |
6.0 |
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Total Power Dissipation @ TC = 25_C |
PD |
150 |
W |
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Derate above 25_C |
|
1.0 |
W/_C |
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Operating and Storage Junction Temperature |
TJ, Tstg |
–Ê65 to |
_C |
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Range |
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+Ê175 |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
RqJC |
1.0 |
_C/W |
Maximum Lead Temperature for Soldering |
TL |
260 |
_C |
Purposes: 1/8″ from Case for 5 Seconds |
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Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
360 V |
CLAMP |
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COLLECTOR 2,4 |
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BASE |
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1 |
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EMITTER 3 |
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4 |
MARKING |
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DIAGRAM |
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SOT−93 |
AYWW |
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1 |
CASE 340D |
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BU323ZG |
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STYLE 1 |
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2 |
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3 |
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A |
= Assembly Location |
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Y |
= Year |
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WW |
= Work Week |
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G |
= Pb−Free Package |
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BU323Z |
= Device Code |
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ORDERING INFORMATION |
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Device |
Package |
Shipping |
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BU323Z |
SOT−93 |
30 Units / Rail |
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BU323ZG |
SOT−93 |
30 Units / Rail |
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(Pb−Free) |
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♥ Semiconductor Components Industries, LLC, 2009 |
1 |
Publication Order Number: |
October, 2009 − Rev. 14 |
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BU323Z/D |
BU323Z
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS (1) |
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Collector−Emitter Clamping Voltage (IC = 7.0 A) |
VCLAMP |
350 |
— |
450 |
Vdc |
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(TC = −40°C to +125°C) |
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Collector−Emitter Cutoff Current |
|
ICEO |
— |
— |
100 |
μAdc |
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(VCE = 200 V, IB = 0) |
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Emitter−Base Leakage Current |
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IEBO |
— |
— |
50 |
mAdc |
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(VEB = 6.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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Base−Emitter Saturation Voltage |
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VBE(sat) |
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Vdc |
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(IC = 8.0 Adc, IB = 100 mAdc) |
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— |
— |
2.2 |
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(IC = 10 Adc, IB = 0.25 Adc) |
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— |
— |
2.5 |
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Collector−Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 7.0 Adc, IB = 70 mAdc) |
(TC = 125°C) |
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— |
— |
1.6 |
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(IC = 8.0 Adc, IB = 0.1 Adc) |
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— |
— |
1.8 |
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(TC = 125°C) |
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— |
— |
1.8 |
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— |
— |
2.1 |
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(IC = 10 Adc, IB = 0.25 Adc) |
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— |
— |
1.7 |
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Base−Emitter On Voltage |
(TC = −40°C to +125°C) |
VBE(on) |
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Vdc |
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(IC = 5.0 Adc, VCE = 2.0 Vdc) |
|
1.1 |
— |
2.1 |
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(IC = 8.0 Adc, VCE = 2.0 Vdc) |
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1.3 |
— |
2.3 |
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Diode Forward Voltage Drop |
|
VF |
— |
— |
2.5 |
Vdc |
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(IF = 10 Adc) |
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DC Current Gain |
(TC = −40°C to +125°C) |
hFE |
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— |
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(IC = 6.5 Adc, VCE = 1.5 Vdc) |
|
150 |
— |
— |
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(IC = 5.0 Adc, VCE = 4.6 Vdc) |
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500 |
— |
3400 |
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DYNAMIC CHARACTERISTICS |
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Current Gain Bandwidth |
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fT |
— |
— |
2.0 |
MHz |
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(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
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Output Capacitance |
|
Cob |
— |
— |
200 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
|
Cib |
— |
— |
550 |
pF |
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(VEB = 6.0 V) |
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CLAMPING ENERGY (see notes) |
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Repetitive Non−Destructive Energy Dissipated at turn−off: |
WCLAMP |
200 |
— |
— |
mJ |
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(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4) |
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SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) |
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Fall Time |
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(IC = 6.5 A, IB1 = 45 mA, |
tfi |
— |
625 |
— |
ns |
Storage Time |
|
tsi |
— |
10 |
30 |
μs |
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VBE(off) = 0, RBE(off) = 0, |
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VCC = 14 V, VZ = 300 V) |
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Cross−over Time |
|
tc |
— |
1.7 |
— |
μs |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%.
http://onsemi.com
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