Panasonic 2SD1771A, 2SD1771 Datasheet

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Panasonic 2SD1771A, 2SD1771 Datasheet

Power Transistors

2SD1771, 2SD1771A

Silicon NPN triple diffusion planar type

For power amplification

For TV vertical deflection output

Complementary to 2SB1191 and 2SB1191A

Features

High collector to emitter VCEO

Large collector power dissipation PC

N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

 

 

 

 

 

Collector to

2SD1771

VCBO

200

V

 

 

 

base voltage

2SD1771A

200

 

 

 

 

 

 

 

Collector to

2SD1771

VCEO

150

V

 

 

 

emitter voltage

2SD1771A

180

 

 

 

 

 

 

 

Emitter to base voltage

VEBO

6

V

Peak collector current

ICP

2

A

Collector current

IC

1

A

Collector power

TC=25°C

PC

25

W

dissipation

Ta=25°C

1.3

 

 

 

 

 

 

 

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 to +150

˚C

 

 

8.5±0.2

 

3.4±0.3

Unit: mm

 

 

 

 

 

 

6.0±0.5

 

 

1.0±0.1

10.0±0.3

1.5±0.1

 

 

 

 

 

 

 

1.5max.

 

1.1max.

10.5min.

2.0

 

0.8±0.1

 

0.5max.

 

 

 

 

 

 

 

2.54±0.3

 

 

 

5.08±0.5

1:Base

 

 

1

2

3

 

 

2:Collector

 

 

 

 

3:Emitter

 

 

 

 

N Type Package

 

 

 

 

 

Unit: mm

 

 

8.5±0.2

 

3.4±0.3

 

 

6.0±0.3

 

1.0±0.1

±0.3

 

 

 

 

 

10.0

 

 

+0

+0.4

14.7±0.5

 

 

1.5–0.4

3.0–0.2

4.4±0.5

2.0

 

0.8±0.1

R0.5

4.4±0.5

 

 

 

 

 

 

 

R0.5

 

 

 

 

2.54±0.3

0 to 0.4

 

 

 

1.1 max.

 

 

5.08±0.5

 

 

 

 

 

 

 

1

2

3

1:Base

 

 

2:Collector

 

 

 

 

 

 

 

 

 

 

3:Emitter

 

 

 

 

 

N Type Package (DS)

Electrical Characteristics

(TC=25˚C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

Symbol

 

Conditions

min

typ

max

Unit

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

 

VCB = 200V, IE = 0

 

 

50

A

Emitter cutoff current

 

 

 

IEBO

 

VEB = 4V, IC = 0

 

 

50

A

Collector to emitter

 

2SD1771

 

VCEO

 

IC = 5mA, IB = 0

150

 

 

V

 

 

 

 

 

 

 

 

 

 

 

voltage

 

 

 

2SD1771A

 

180

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base voltage

 

VEBO

 

IE = 0.5mA, IC = 0

6

 

 

V

 

 

 

 

 

 

 

*

 

VCE = 10V, IC = 100mA

60

 

240

 

Forward current transfer ratio

 

hFE1

 

 

 

 

hFE2

 

VCE = 10V, IC = 300mA

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

 

VCE = 10V, IC = 300mA

 

 

1

V

Collector to emitter saturation voltage

 

VCE(sat)

 

IC = 500mA, IB = 50mA

 

 

1

V

Transition frequency

 

 

 

fT

 

VCE = 10V, IC = 100mA, f = 1MHz

 

20

 

MHz

Collector output capacitance

 

Cob

 

VCB = 10V, IE = 0, f = 1MHz

 

27

 

pF

*hFE1 Rank classification

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rank

 

Q

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

 

60 to 140

100 to 240

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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