2SD1257A
1
Po wer Transistors
2SD1257, 2SD1257A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB934
■
Features
●
Low collector to emitter saturation voltage V
CE(sat)
●
Satisfactory linearity of foward current transfer ratio h
FE
●
Large collector current I
C
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
150
80
100
7
15
7
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1257
2SD1257A
2SD1257
2SD1257A
T
C
=25°C
Ta=25°C
■
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
I
C
= 5A, I
B
= 0.25A
I
C
= 5A, I
B
= 0.25A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 3A, I
B1
= 0.3A, I
B2
= – 0.3A,
V
CC
= 50V
min
80
100
45
60
typ
30
0.5
1.5
0.1
max
10
50
260
0.5
1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
2SD1257
2SD1257A
*
h
FE2
Rank classification
Rank R Q P
h
FE2
60 to 120 90 to 180 130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5±0.2
6.0±0.5
10.0±0.310.5min.
2.0 1.5±0.1
1.5max.
0.8±0.1
5.08±0.5
2.54±0.3
1.1max.
0.5max.
1.0±0.1
3.4±0.3
213
Unit: mm
8.5±0.2
4.4±0.5
2.0
10.0±0.3
14.7±0.5
4.4±0.5
6.0±0.3
3.4±0.3
2.54±0.3
5.08±0.5
1.0±0.1
0.8±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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