2SD1276A
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
Po wer Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB950 and 2SB950A
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1276
2SD1276A
2SD1276
2SD1276A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
2000 to 5000
Symbol
2SD1276
2SD1276A
2SD1276
2SD1276A
2SD1276
2SD1276A
4000 to 10000
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
60
80
60
80
5
8
4
40
2
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 3V, IC = 3A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
TO–220 Full Pack Package(a)
Internal Connection
B
min
60
80
1000
2000
typ
20
0.5
Unit: mm
1:Base
2:Collector
3:Emitter
C
E
max
200
200
500
500
Unit
µA
µA
2
mA
V
10000
2
4
2.5
V
V
MHz
µs
4
1
µs
µs
1
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