Panasonic 2SB0937A, 2SB0937 Datasheet

Power Transistors

2SB937, 2SB937A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Complementary to 2SD1260 and 2SD1260A

■ Features

●High foward current transfer ratio hFE

●High-speed switching

●N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings (TC=25˚C)

	Parameter		Symbol	Ratings	Unit
	Collector to	2SB937	VCBO	–60	V
	base voltage	2SB937A		–80
	Collector to	2SB937	VCEO	–60	V
	emitter voltage	2SB937A		–80
	Emitter to base voltage		VEBO	–5	V
	Peak collector current		ICP	–4	A
	Collector current		IC	–2	A
	Collector power	TC=25°C	PC	35	W
	dissipation	Ta=25°C		1.3
	Junction temperature		Tj	150	˚C
	Storage temperature		Tstg	–55 to +150	˚C

■ Electrical Characteristics (TC=25˚C)

		8.5±0.2		3.4±0.3	Unit: mm
		6.0±0.5			1.0±0.1
10.0±0.3	1.5±0.1
			1.5max.		1.1max.
10.5min.	2.0		0.8±0.1		0.5max.
			2.54±0.3
	5.08±0.5			1:Base
	1	2	3
				2:Collector
				3:Emitter
				N Type Package
					Unit: mm
		8.5±0.2		3.4±0.3
		6.0±0.3		1.0±0.1
±0.3			1.5–0.4	3.0–0.2	±14.70.5
10.0
			+0	+0.4
4.4±0.5	2.0		0.8±0.1	R0.5	4.4±0.5
				R0.5
			2.54±0.3	0 to 0.4
				1.1 max.
	5.08±0.5

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2

3

1:Base

2:Collector

3:Emitter

N Type Package (DS)

Parameter			Symbol			Conditions	min	typ	max	Unit
Collector cutoff		2SB937			V	= –60V, I = 0			–1
			ICBO		CB	E				mA
current		2SB937A			V	= –80V, I = 0			–1
					CB	E
Collector cutoff		2SB937			V	= –30V, I = 0			–2
			ICEO		CE	B				mA
current		2SB937A			V	= –40V, I = 0			–2
					CE	B
Emitter cutoff current			I		V	= –5V, I = 0			–2	mA
			EBO		EB	C
Collector to emitter		2SB937	V		I = –30mA, I = 0		–60			V
voltage		2SB937A	CEO		C	B	–80
			h		V	= –4V, I = –1A	1000
Forward current transfer ratio			FE1		CE	C
			h	*	V	= –4V, I = –2A	2000		10000
			FE2		CE	C
Base to emitter voltage			V		V	= –4V, I = –2A			–2.8	V
			BE		CE	C
Collector to emitter saturation voltage			V		I = –2A, I = –8mA				–2.5	V
			CE(sat)		C	B
Transition frequency			f		V	= –10V, I = – 0.5A, f = 1MHz		20		MHz
			T		CE	C
Turn-on time			ton					0.4		s
Storage time			tstg		IC = –2A,B1I = –8mA,B2I = 8mA			1.5		s
Fall time			tf					0.5		s

*hFE2 Rank classification			C
			Internal Connection
Rank	Q	P	B
hFE2	2000 to 5000 4000 to 10000		E

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