Panasonic 2SD1266A, 2SD1266 Datasheet

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Panasonic 2SD1266A, 2SD1266 Datasheet

Power Transistors

2SD1266, 2SD1266A

Silicon NPN triple diffusion planar type

For power amplification

Complementary to 2SB941 and 2SB941A

Features

High forward current transfer ratio hFE which has satisfactory linearity

Low collector to emitter saturation voltage VCE(sat)

Full-pack package which can be installed to the heat sink with one screw

Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

 

 

 

 

 

Collector to

2SD1266

VCBO

60

V

 

 

 

base voltage

2SD1266A

80

 

 

 

 

 

 

 

Collector to

2SD1266

VCEO

60

V

 

 

 

emitter voltage

2SD1266A

80

 

 

 

 

 

 

 

Emitter to base voltage

VEBO

6

V

Peak collector current

ICP

5

A

Collector current

IC

3

A

Collector power

TC=25°C

PC

35

W

dissipation

Ta=25°C

2

 

 

 

 

 

 

 

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 to +150

˚C

 

 

±0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±0.2

 

 

 

 

 

 

±0.3

 

7.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

14.0±0.5

 

 

 

 

 

 

 

 

Solder Dip

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Unit: mm

10.0±0.2

4.2±0.2

5.5±0.2

 

 

2.7±0.2

 

 

 

 

 

 

 

 

 

 

 

 

±0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.2

 

 

 

 

 

 

 

 

 

 

 

 

 

φ3.1±0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.4±0.1

0.8±0.1

2.54±0.25

5.08±0.5

1 2 3

1.3±0.2

0.5 –0+0..12

1:Base

2:Collector

3:Emitter TO–220 Full Pack Package(a)

Electrical Characteristics

(TC=25˚C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

Symbol

 

Conditions

min

typ

max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff

 

2SD1266

 

ICES

 

VCE = 60V, VBE = 0

 

 

200

A

current

 

 

2SD1266A

 

 

VCE = 80V, VBE = 0

 

 

200

 

 

 

 

 

 

 

 

 

Collector cutoff

 

2SD1266

 

ICEO

 

VCE = 30V, IB = 0

 

 

300

A

current

 

 

2SD1266A

 

 

VCE = 60V, IB = 0

 

 

300

Emitter cutoff current

 

 

 

IEBO

 

VEB = 6V, IC = 0

 

 

1

mA

Collector to emitter

 

2SD1266

 

VCEO

 

IC = 30mA, IB = 0

60

 

 

V

 

 

 

 

 

 

 

 

 

 

 

voltage

 

 

2SD1266A

 

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*

 

VCE = 4V, IC = 1A

70

 

250

 

Forward current transfer ratio

 

hFE1

 

 

 

 

hFE2

 

VCE = 4V, IC = 3A

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

 

VCE = 4V, IC = 3A

 

 

1.8

V

Collector to emitter saturation voltage

 

VCE(sat)

 

IC = 3A, IB = 0.375A

 

 

1.2

V

Transition frequency

 

 

 

fT

 

VCE = 10V, IC = 0.5A, f = 10MHz

 

30

 

MHz

Turn-on time

 

 

 

 

 

ton

 

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,

 

0.5

 

s

Storage time

 

 

 

 

 

tstg

 

 

2.5

 

s

 

 

 

 

 

 

VCC = 50V

 

 

Fall time

 

 

 

 

 

tf

 

 

0.4

 

s

 

 

 

 

 

 

 

 

 

*hFE1 Rank classification

 

 

 

 

 

 

 

 

Rank

 

Q

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

 

70 to 150

120 to 250

 

 

 

 

 

 

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

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