Panasonic 2SC3973A, 2SC3973 Datasheet

Power Transistors

2SC3973, 2SC3973A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

■ Features

●High-speed switching

●High collector to base voltage VCBO

●Wide area of safe operation (ASO)

●Satisfactory linearity of foward current transfer ratio hFE

●Full-pack package which can be installed to the heat sink with one screw

■ Absolute Maximum Ratings (TC=25˚C)

	Parameter			Symbol	Ratings	Unit
	Collector to		2SC3973	VCBO	800	V
	base voltage		2SC3973A		900
	Collector to		2SC3973	VCES	800	V
	emitter voltage		2SC3973A		900
	Collector to emitter voltage			VCEO	500	V
	Emitter to base voltage			VEBO	8	V
	Peak collector current			ICP	15	A
	Collector current			IC	7	A
	Base current			IB	4	A
	Collector power		TC=25°C	PC	45	W
	dissipation		Ta=25°C		2
	Junction temperature			Tj	150	˚C
	Storage temperature			Tstg	–55 to +150	˚C

		±0.1
		0.7
		±0.2
±0.3		7.5
16.7
		4.0
14.0±0.5
		Solder Dip

Unit: mm

10.0±0.2

4.2±0.2

5.5±0.2

2.7±0.2

±0.2

4.2

φ3.1±0.1

1.4±0.1

0.8±0.1

2.54±0.25

5.08±0.5

1 2 3

1.3±0.2

0.5 –0+0..12

1:Base

2:Collector

3:Emitter TO–220 Full Pack Package(a)

■ Electrical Characteristics				(TC=25˚C)
Parameter				Symbol		Conditions	min	typ	max	Unit
Collector cutoff		2SC3973		ICBO		VCB = 800V, IE = 0			100	A
current		2SC3973A				VCB = 900V, IE = 0			100
Emitter cutoff current				IEBO		VEB = 5V, IC = 0			100	A
Collector to emitter voltage				VCEO		IC = 10mA, IB = 0	500			V
Forward current transfer ratio				hFE1		VCE = 5V, IC = 0.1A	15
				hFE2		VCE = 5V, IC = 4A	8
Collector to emitter saturation voltage				VCE(sat)		IC = 4A, IB = 0.8A			1.0	V
Base to emitter saturation voltage				VBE(sat)		IC = 4A, IB = 0.8A			1.5	V
Transition frequency				fT		VCE = 10V, IC = 0.5A, f = 1MHz		20		MHz
Turn-on time				ton		IC = 4A, IB1 = 0.8A, IB2 = –1.6A,			1.0	s
Storage time				tstg					3.0	s
						VCC = 200V
Fall time				tf					0.3	s

1