Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
■ Features
●High foward current transfer ratio hFE
●Satisfactory linearity of foward current transfer ratio hFE
●Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings (TC=25˚C)
Parameter |
Symbol |
Ratings |
Unit |
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Collector to |
2SD1273 |
VCBO |
80 |
V |
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base voltage |
2SD1273A |
100 |
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Collector to |
2SD1273 |
VCEO |
60 |
V |
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emitter voltage |
2SD1273A |
80 |
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Emitter to base voltage |
VEBO |
6 |
V |
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Peak collector current |
ICP |
6 |
A |
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Collector current |
IC |
3 |
A |
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Base current |
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IB |
1 |
A |
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Collector power |
TC=25°C |
PC |
40 |
W |
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dissipation |
Ta=25°C |
2 |
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Junction temperature |
Tj |
150 |
˚C |
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Storage temperature |
Tstg |
–55 to +150 |
˚C |
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±0.1 |
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0.7 |
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±0.2 |
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±0.3 |
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7.5 |
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16.7 |
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4.0 |
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14.0±0.5 |
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Solder Dip |
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Unit: mm
10.0±0.2 |
4.2±0.2 |
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5.5±0.2 |
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2.7±0.2 |
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±0.2 |
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4.2 |
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φ3.1±0.1 |
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1.4±0.1
0.8±0.1
2.54±0.25
5.08±0.5
1 2 3
1.3±0.2 |
0.5 –0+0..12 |
1:Base
2:Collector
3:Emitter TO–220 Full Pack Package(a)
■ Electrical Characteristics |
(TC=25˚C) |
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Parameter |
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Symbol |
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Conditions |
min |
typ |
max |
Unit |
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Collector cutoff |
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2SD1273 |
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ICBO |
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VCB = 80V, IE = 0 |
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100 |
A |
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current |
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2SD1273A |
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VCB = 100V, IE = 0 |
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100 |
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Collector cutoff current |
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ICEO |
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VCE = 40V, IB = 0 |
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100 |
A |
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Emitter cutoff current |
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IEBO |
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VCB = 6V, IC = 0 |
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100 |
A |
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Collector to emitter |
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2SD1273 |
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VCEO |
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IC = 25mA, IB = 0 |
60 |
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V |
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voltage |
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2SD1273A |
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80 |
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Forward current transfer ratio |
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* |
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VCE = 4V, IC = 0.5A |
500 |
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2500 |
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hFE |
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Collector to emitter saturation voltage |
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VCE(sat) |
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IC = 2A, IB = 0.05A |
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1 |
V |
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Transition frequency |
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fT |
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VCE = 12V, IC = 0.2A, f = 10MHz |
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50 |
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MHz |
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*hFE Rank classification |
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Rank |
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Q |
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P |
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O |
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hFE |
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500 to 1000 |
800 to 1500 |
1200 to 2500 |
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Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
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