NEC UPA808TC-T1, UPA808TC, UPA808T-T1, UPA808T Datasheet

SILICON TRANSISTOR

FEATURES

• Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

• A Super Mini Mold Package Adopted

• Built-in 2 Transistors (2 × 2SC5184)

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE

µ

PA808T Loose products

(50 PCS)

µ

PA808T-T1 Taping products

(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 in 1 element mW

180 in 2 elements

Note

Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C

Note 110 mW must not be exceeded in 1 element.

µ

PA808T

Document No. P12154EJ2V0DS00 (2nd edition) (Previous No. ID-3642) Date Published November 1996 N Printed in Japan

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

2.1±0.1

1.25±0.1

2.0±0.2

1.3

0.650.65

0.2

+0.1

–0

123

654

XY

0.9±0.1

0.7

0 to 0.1

0.15

+0.1

–0

PACKAGE DRAWINGS

(Unit: mm)

©

1994

DATA SHEET

©

1995

654

123

Q

1

Q

2

PIN CONNECTIONS

PIN CONFIGURATION (Top View)

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

µ

PA808T

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT

Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1

µ

A

Emitter Cutoff Current IEBO VEB = 1 V, IC = 0

0.1

µ

A

DC Current Gain hFE VCE = 2 V, IC = 20 mA

Note 1

70 140 Gain Bandwidth Product (1) fT VCE = 2 V, IC = 20 mA, f = 2 GHz 9 11 GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 10 mA, f = 2 GHz 7 9 GHz Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHz

Note 2

0.4 0.8 pF Insertion Power Gain (1) |S21e|2VCE = 2 V, IC = 20 mA, f = 2 GHz 7 8.5 dB Insertion Power Gain (2) |S21e|2VCE = 1 V, IC = 10 mA, f = 2 GHz 6 7.5 dB Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz 1.3 2 dB Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.3 2 dB hFE Ratio hFE1/hFE2 VCE = 2 V, IC = 20 mA 0.85

A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank KB Marking T86 hFE Value 70 to 140

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

200

100

0 50 100 150

90 mW

Ambient Temperature TA (°C)

Total Power Dissipation P

T

(mW)

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

50

40

30

20

10

0 0.5 1.0

V

CE

= 2 V

Base to Emitter Voltage VBE (V)

Collector Current I

C

(mA)

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

25

20

15

10

5

0 1.0 2.0 3.0

200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A

IB = 20 A

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(mA)

180 mW

2 Elements in Total

Per Element

µ µ µ µ µ

µ µ µ µ

µ

Collector Current IC (mA)

DC Current Gain h

FE

DC CURRENT GAIN vs. COLLECTOR CURRENT

500

200

100

10

20

50

VCE = 2 V

VCE = 1 V

1 2 5 10 20 50 100

µ

PA808T

3

NOISE FIGURE vs. COLLECTOR CURRENT

3

2

1

1235710

Collector Current I

C

(mA)

Noise Figure NF (dB)

VCE = 1 V

VCE = 2 V

f = 1 MHz

0.8

0.6

0.4

0.2

0 2.0 4.0 6.0 8.0 10.0

Collector to Base Voltage V

CB

(V)

Feed-back Capacitance C

re

(pF)

f = 2 GHz

FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

f = 2 GHz

15

10

5

1235710

Gain Bandwidth Product f

T

(GHz)

Collector Current IC (mA)

INSERTION GAIN vs. COLLECTOR CURRENT

VCE = 1 V

VCE = 2 V

10

5

0

1235710

V

CE

= 1 V

VCE = 2 V

Insertion Power Gain |S

21e

|

2

(dB)

Collector Current IC (mA)

f = 2 GHz

µ

PA808T

4

S-PARAMETERS

VCE = 1 V, IC = 1 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz

100.0000

200.0000

300.0000

400.0000

500.0000

600.0000

700.0000

800.0000

900.0000

1000.0000

1100.0000

1200.0000

1300.0000

1400.0000

1500.0000

1600.0000

1700.0000

1800.0000

1900.0000

2000.0000

ANG

–5.5 –10.9 –15.5 –20.7 –24.9 –28.6 –32.6 –35.6 –38.5 –41.3 –43.4 –45.6 –47.9 –49.5 –51.6 –53.0 –54.6 –56.0 –57.4 –59.0

ANG

–6.9 –14.0 –20.5 –28.4 –34.5 –42.2 –49.5 –55.6 –63.1 –68.8 –76.3 –82.9 –88.7 –95.8

–101.4 –107.4 –113.5 –118.6 –124.6 –130.5

MAG

0.993

0.982

0.960

0.925

0.902

0.861

0.826

0.791

0.758

0.731

0.703

0.675

0.652

0.629

0.610

0.591

0.574

0.559

0.545

0.532

ANG

84.1

78.0

72.3

67.5

62.9

58.6

54.4

51.1

48.2

45.7

43.4

41.6

39.4

38.4

37.0

36.0

35.3

35.0

34.5

34.6

MAG

2.031

1.953

1.928

2.021

1.911

1.941

1.930

1.864

1.917

1.839

1.838

1.833

1.742

1.756

1.686

1.654

1.624

1.565

1.530

1.509

MAG

0.029

0.057

0.083

0.105

0.126

0.144

0.158

0.172

0.182

0.191

0.200

0.204

0.209

0.213

0.215

0.217

0.218

0.220

0.221

0.222

MAG

0.974

0.971

0.956

0.926

0.902

0.861

0.829

0.793

0.753

0.723

0.691

0.652

0.628

0.587

0.565

0.535

0.508

0.489

0.471

0.449

ANG

170.7

162.5

154.8

147.6

141.1

135.2

129.2

123.6

118.6

114.1

109.3

104.4

100.1

95.7

92.0

88.1

84.7

81.2

78.4

75.2

VCE = 1 V, IC = 3 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz

100.0000

200.0000

300.0000

400.0000

500.0000

600.0000

700.0000

800.0000

900.0000

1000.0000

1100.0000

1200.0000

1300.0000

1400.0000

1500.0000

1600.0000

1700.0000

1800.0000

1900.0000

2000.0000

ANG –10.7 –20.4 –28.1 –34.6 –39.7 –43.1 –46.8 –49.0 –51.3 –52.9 –54.4 –55.6 –57.2 –58.2 –59.6 –60.2 –61.3 –62.4 –63.4 –64.8

ANG –11.2 –22.2 –31.8 –44.2 –52.5 –63.5 –73.9 –81.8 –90.8 –98.6

–105.7 –113.0 –119.7 –126.4 –132.4 –138.2 –144.4 –150.1 –156.0 –161.8

MAG

0.966

0.914

0.845

0.764

0.705

0.639

0.587

0.543

0.508

0.478

0.451

0.428

0.408

0.390

0.375

0.361

0.348

0.338

0.329

0.319

ANG

81.0

72.7

66.6

61.7

58.1

55.8

54.2

53.3

52.9

52.3

51.9

51.7

51.6

51.8

51.9

52.1

52.4

MAG

5.682

5.447

5.165

5.205

4.838

4.684

4.522

4.219

4.031

3.796

3.574

3.377

3.166

3.011

2.850

2.707

2.588

2.468

2.364

2.274

MAG

0.027

0.052

0.072

0.087

0.101

0.111

0.121

0.129

0.137

0.143

0.152

0.158

0.165

0.171

0.179

0.185

0.193

0.200

0.207

0.214

MAG

0.917

0.879

0.830

0.755

0.703

0.625

0.560

0.506

0.456

0.411

0.384

0.346

0.327

0.303

0.289

0.273

0.261

0.252

0.247

0.242

ANG

164.5

154.3

144.7

136.0

129.3

122.1

115.3

109.8

104.7

100.0

95.9

91.7

88.4

85.2

82.4

79.6

77.1

74.4

72.2

69.8