NEC UPA807T-T1, UPA807T Datasheet
DATA SHEET
©
1995
SILICON TRANSISTOR
µ
PA807T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Current, High Gain
|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC5179)
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
µ
PA807T Loose products
(50 PCS)
µ
PA807T-T1 Taping products
(3 KPCS/Reel)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
2.0±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 30 in 1 element mW
60 in 2 elements
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
XY
1.3
0.9±0.1
123
0.650.65
0.7
654
+0.1
0 to 0.1
PIN CONFIGURATION (Top View)
654
Q
1
Q
2
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
+0.1
–0
0.2
–0
0.15
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published November 1996 N
Printed in Japan
©
1994
µ
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0
DC Current Gain hFE VCE = 2 V, IC = 7 mA
Note 1
70 140
Gain Bandwidth Product (1) fT VCE = 2 V, IC = 7 mA, f = 2 GHz 10 13 GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 8.5 12 GHz
Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHz
Note 2
0.4 0.6 pF
Insertion Power Gain (1) |S21e|2VCE = 2 V, IC = 7 mA, f = 2 GHz 7.5 9 dB
Insertion Power Gain (2) |S21e|2VCE = 1 V, IC = 5 mA, f = 2 GHz 7 8.5 dB
Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz 1.5 2 dB
Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 2 dB
hFE Ratio hFE1/hFE2 VCE = 2 V, IC = 7 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
0.1
PA807T
µ
A
µ
A
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank KB
Marking T84
hFE Value 70 to 140
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
2 Elements in Total
Total Power Dissipation PT (mW)
Per Element
0 50 100 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
25
60 mW
30 mW
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
V
CE = 2 V
40
30
20
Collector Current IC (mA)
10
0 0.5 1.0
500
Base to Emitter Voltage V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
BE (V)
20
15
10
Collector Current IC (mA)
5
0 1.0 2.0 3.0
Collector to Emitter Voltage VCE (V)
µ
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
B = 20 A
I
µ
200
100
50
DC Current Gain hFE
20
10
1 2 5 10 20 50 100
VCE = 1 V
Collector Current IC (mA)
VCE = 2 V
2
µ
PA807T
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
f = 2 GHz
(GHz)
T
10
5
Gain Bandwidth Product f
1 2 3 5 7 10 20
Collector Current IC (mA)
NOISE FIGURE
3
2
Noise Figure (dB)
1
vs. COLLECTOR CURRENT
f = 2 GHz
1 2 3 5 7 10
Collector Current IC (mA)
VCE = 2 V
VCE = 1 V
VCE = 1 V
VCE = 2 V
INSERTION POWER GAIN
10
(dB)
2
|
21e
Insertion Power Gain |S
0.8
(pF)
re
0.6
0.4
0.2
Feed-back Capacitance C
0.0 2.0 4.0 6.0 8.0 10.0
vs. COLLECTOR CURRENT
VCE = 2 V
VCE = 1 V
5
1 2 3 5 7 10 20
0
Collector Current I
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage VCB (V)
C
(mA)
f = 1 MHz
3
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