NEC UPA805T-T1, UPA805T Datasheet
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA805T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES PACKAGE DRAWINGS
• Low Noise, High Gain (Unit: mm)
• Operable at Low Voltage
• Small Feed-back Capacitance
re = 0.3 pF TYP.
C
• Built-in 2 Transistors (2 × 2SC4958)
ORDERING INFORMATION
1.3
2.0±0.2
0.650.65
2.1±0.1
1.25±0.1
123
XY
654
–0
+0.1
0.2
PART NUMBER
µ
PA805T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
µ
PA805T-T1 Taping products
Remark If you require an evaluation sample, please contact an NEC
QUANTITY PACKING STYLE
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 60 in 1 element mW
120 in 2 elements
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note
0.7
0.9±0.1
654
1
Q
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
0~0.1
Q
2
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
+0.1
–0
0.15
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. ID-3639
(O.D. No. ID-9146)
Date Published April 1995 P
Printed in Japan
The information in this document is subject to change without notice.
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1
DC Current Gain hFE VCE = 3 V, IC = 5 mA
Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 2 GHz 12 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21|
2
VCE = 3 V, IC = 5 mA, f = 2 GHz 7 8.5 dB
Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 2.5 4 dB
hFE Ratio hFE1/hFE2 VCE = 3 V, IC = 5 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
Note 1
Note 2
75 150
0.3 0.5 pF
µ
PA805T
µ
A
µ
A
hFE CLASSIFICATION
Rank KB
Marking T82
hFE Value 75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
(mW)
T
2 Elements in Total
100
Per Element
Total Power Dissipation P
0 50 100 150
Ambient Temperature T
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
40
60 mW
120 mW
A
(°C)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
V
CE
= 3 V
40
(mA)
C
30
20
Collector Current I
10
0
Base to Emitter Voltage VBE (V)
200
0.5 1
DC CURRENT GAIN
vs. COLLECTOR CURRENT
30
(mA)
C
µ
20
10
Collector Current I
0 246
Collector to Emitter Voltage VCE (V)
500 A
400 A
300 A
200 A
B
= 100 A
I
µ
µ
µ
µ
FE
100
DC Current Gain h
0
0.1
VCE = 3 V
0.5 1 5 10 50 100
Collector Current IC (mA)
5 V
2
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