NEC Electronics Inc UPA802TC-T1, UPA802T-T1, UPA802T Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

μPA802T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

•Low Noise

NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

•High Gain

|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

•A Mini Mold Package Adopted

•Built-in 2 Transistors (2 × 2SC4227)

ORDERING INFORMATION

PART NUMBER	QUANTITY	PACKING STYLE
μPA802T	Loose products	Embossed tape 8 mm wide. Pin 6 (Q1
	(50 PCS)	Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
		face to perforation side of the tape.
μPA802T-T1	Taping products
	(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

						+0.1	–0
2.0±0.2	1.3	0.65 0.65	2 1	Y X	5 6	0.2
			3		4

0.9±0.1	0.7	+0.1	–0
	0~0.1	0.15

PIN CONFIGURATION (Top View)

6				5	4

Q1

Q2

1

2

3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER	SYMBOL	RATING	UNIT	PIN CONNECTIONS
				1. Collector (Q1)	4.	Emitter (Q2)
				2. Emitter (Q1)	5.	Base (Q2)
Collector to Base Voltage	VCBO	20	V	3. Collector (Q2)	6.	Base (Q1)
Collector to Emitter Voltage	VCEO	10	V
Emitter to Base Voltage	VEBO	1.5	V
Collector Current	IC	65	mA
Total Power Dissipation	PT	150 in 1 element	mW
		200 in 2 elementsNote
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg	–65 to +150	˚C

Note 110 mW must not be exceeded in 1 element.

The information in this document is subject to change without notice.

Document No. ID-3636

(O.D. No. ID-9143)

Date Published	April 1995 P
Printed in Japan	©		1995

								μPA802T
	ELECTRICAL CHARACTERISTICS		(TA = 25 °C)
	PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
	Collector Cutoff Current	ICBO	VCB = 10 V, IE = 0				0.8	μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				0.8	μA
	DC Current Gain	hFE	VCE = 3 V, IC = 7 mANote 1		70		240
	Gain Bandwidth Product	fT	VCE = 3	V, IC = 7 mA, f = 1 GHz	4.5	7.0		GHz
	Feed-back Capacitance	Cre	VCB = 3 V, IE = 0, f = 1 MHzNote 2				0.9	pF
	Insertion Power Gain	|S21|2	VCE = 3	V, IC = 7 mA, f = 1 GHz	10	12		dB
	Noise Figure	NF	VCE = 3	V, IC = 7 mA, f = 1 GHz		1.4	1.7	dB
	hFE Ratio	hFE1/hFE2	VCE = 3	V, IC = 7 mA	0.85
			A smaller value among
			hFE of hFE1 = Q1, Q2
			A larger value among
			hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank	FB	GB
Marking	R34	R35
hFE Value	70 to 150	110 to 240

TYPICAL	CHARACTERISTICS				(TA = 25 °C)
		PT - TA		Characteristics
(mW)						Free Air
	200
PT
Dissipation			2	Elements
		Per			in	Total
	100		Element
Total Power
	0	50				100	150
		Ambient Temperature TA (°C)
		IC - VBE Characteristics
	20
		VCE = 3 V

IC (mA)
CurrentCollector	10

0	0.5	1.0
	Base to Emitter Voltage VBE (V)

Collector Current IC (mA)

DC Current Gain hFE

IC - VCE Characteristics

25
20
																					μ
																			160			A
																						μ
15																			140			A
																			120			μA
																			100			μA
10
																				80μ A
																				60	μ A
5																				40μ A
																		IB = 20μ A
0									0.5													1.0
						Collector to Emitter Voltage VCE (V)
									hFE - IC Characteristics
200
			VCE = 3 V
100
50
20
10
0.5			1						5							10						50

Collector Current IC (mA)

2