DATA SHEET
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER
−NEPOCTM Series−
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
•Long creepage and clearance distance (8 mm)
•High isolation voltage (BV = 5 000 Vr.m.s.)
•High collector to emitter voltage (VCEO = 80 V)
•High-speed switching (tr = 3 μs TYP., tf = 5 μs TYP.)
•High current transfer ratio (CTR = 200 % TYP.)
•UL approved: File No. E72422 (S)
•CSA approved: No. 101391
•BSI approved: No. 8243/8244
•NEMKO approved: No. P97103006
•DEMKO approved: No. 307269
•SEMKO approved: No. 9741154/01
•FIMKO approved: No. 018277
•VDE0884 approved
ORDERING INFORMATION
Part Number |
Package |
Safety Standard Approval |
Application Part Number *1 |
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PS2581L1 |
4-pin DIP |
UL, CSA, BSI, NEMKO, DEMKO, |
PS2581L1 |
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PS2581L2 |
4-pin DIP |
SEMKO, FIMKO, VDE approved |
PS2581L2 |
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(lead bending surface mount) |
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PS2581L2-E3, E4 |
4-pin DIP taping |
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*1 As applying to Safety Standard, following part number should be used.
The information in this document is subject to change without notice.
Document No. P12809EJ2V0DS00 (2nd edition) |
The mark • shows major revised points. |
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Date Published June 1998 NS CP(K) |
© |
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1997 |
Printed in Japan |
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PS2581L1,PS2581L2
PACKAGE DIMENSIONS (in millimeters)
PS2581L1
4.6±0.35
1.0±0.2
+0.5 |
–0.1 |
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6.5 |
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4.15±0.4 |
3.5±0.3 |
3.2±0.4 |
0.35 |
1.25±0.15 |
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0.50±0.1 |
0.25 M |
2.54 |
TOP VIEW
4 3
1. Anode
2. Cathode
3. Emitter
4. Collector
12
10.16
7.62
0 to 15˚
PS2581L2
4.6±0.35
1.0±0.2
+0.5 |
–0.1 |
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6.5 |
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3.5±0.3
1.25±0.15
0.25 M
2.54
TOP VIEW
4 3
1. Anode
2. Cathode
3. Emitter
4. Collector
12
10.16
7.62
0.25±0.2
0.9±0.25
12.0 MAX.
PHOTOCOUPLER CONSTRUCTION
Parameter |
Unit (MIN.) |
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Air Distance |
8 mm |
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Outer Creepage Distance |
8 mm |
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Inner Creepage Distance |
4 mm |
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Isolation Thickness |
0.4 mm |
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2
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
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Parameter |
Symbol |
Ratings |
Unit |
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Diode |
Forward Current (DC) |
IF |
80 |
mA |
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Reverse Voltage |
VR |
6 |
V |
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Power Dissipation Derating |
PD/°C |
1.5 |
mW/°C |
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Power Dissipation |
PD |
150 |
mW |
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Peak Forward Current *1 |
IFP |
1 |
A |
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Transistor |
Collector to Emitter Voltage |
VCEO |
80 |
V |
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Emitter to Collector Voltage |
VECO |
7 |
V |
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Collector Current |
IC |
50 |
mA |
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Power Dissipation Derating |
PC/°C |
1.5 |
mW/°C |
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Power Dissipation |
PC |
150 |
mW |
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Isolation Voltage *2 |
BV |
5 000 |
Vr.m.s. |
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Operating Ambient Temperature |
TA |
−55 to +100 |
°C |
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Storage Temperature |
Tstg |
−55 to +150 |
°C |
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*1 PW = 100 μs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
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Parameter |
Symbol |
Conditions |
MIN. |
TYP. |
MAX. |
Unit |
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Diode |
Forward Voltage |
VF |
IF = 10 mA |
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1.17 |
1.4 |
V |
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Reverse Current |
IR |
VR = 5 V |
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5 |
μA |
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Terminal Capacitance |
Ct |
V = 0 V, f = 1.0 MHz |
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50 |
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pF |
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Transistor |
Collector to Emitter Dark |
ICEO |
VCE = 80 V, IF = 0 mA |
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100 |
nA |
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Current |
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Coupled |
Current Transfer Ratio (IC/IF) *1 |
CTR |
IF = 5 mA, VCE = 5 V |
80 |
200 |
400 |
% |
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Collector Saturation Voltage |
VCE(sat) |
IF = 10 mA, IC = 2 mA |
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0.3 |
V |
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Isolation Resistance |
RI-O |
VI-O = 1.0 kVDC |
1011 |
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Ω |
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Isolation Capacitance |
CI-O |
V = 0 V, f = 1.0 MHz |
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0.5 |
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pF |
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Rise Time *2 |
tr |
VCC = 10 V, IC = 2 mA, |
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3 |
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μs |
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RL = 100 Ω |
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Fall Time *2 |
tf |
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5 |
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*1 CTR rank
L: 200 to 400 (%)
M: 80 to 240 (%)
D: 100 to 300 (%)
H: 80 to 160 (%)
W: 130 to 260 (%)
N: 80 to 400 (%)
*2 Test circuit for switching time
Pulse Input 
PW = 100 μs
Duty Cycle = 1/10
IF
50 Ω
VCC
VOUT
RL = 100 Ω
4
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