NEC PS2711-1-F3, PS2711-1-F4 Datasheet

DATA SHEET

PHOTOCOUPLER

PS2711-1

HIGH CTR

4-PIN SOP PHOTOCOUPLER

DESCRIPTION

The PS2711-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

phototransistor in a plastic SOP for high density applications.

The package is an SOP (Small Outline Package) type for high density mounting applications.

FEATURES

• High current transfer ratio (CTR = 200 % TYP. @ IF = 1mA)

• High isolation voltage (BV = 3 750 Vr.m.s.)

• Small and thin package (4-pin SOP)

• Ordering number of tape product: PS2711-1-F3, F4

• UL approved: File No. E72422 (S)

−NEPOCTM Series−

APPLICATIONS

• Programmable logic controllers

• Small power supply

•Hybrid IC

• Modem/FAX

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14945EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan

©

2000

PACKAGE DIMENSIONS

in millimeters

PS2711-1

MARKING

No. 1 pin Mark

2.1±0.2

0.1±0.1

2711

N003

4±0.5

2.54

0.4

+0.10

0.25 M

–0.05

Trade Mark
Type Number
Assembly Lot

+0.10

–0.05

0.15

TOP VIEW

43

12

7.0±0.3

4.4

0.5±0.3

1. Anode

2. Cathode

3. Emitter

4. Collector

N003

Week Assembled
Year Assembled
(Last 1 Digit)

CTR Rank Name

2

Data Sheet P14945EJ1V0DS00

ORDERING INFORMATION

PS2711-1

Part Number Package Packing Style

Safety Standards

Approval

Application Part

Number

PS2711-1 4-pin SOP 50 pcs (Tape 50 pcs cut) UL approved PS2711-1
PS2711-1-F3 Embossed Tape 3 500 pcs/reel
PS2711-1-F4

For the application of the Safety Standard, following part number should be used.

*1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C, unless otherwise specified)

Parameter Symbol Ratings Unit

Diode Forward Current (DC) I

Reverse Voltage V
Power Dissipation Derati ng∆PD/°C0.8mW/
Power Dissipation P
Peak Forward Current

*1

Transistor Collector to Emitter Voltage V

Emitter to Collector Voltage V
Collector Current I
Power Dissipation Derati ng∆PC/°C1.5mW/
Power Dissipation P

Isolation Voltage

*2

Operating Ambient Temperature T
Storage Temperature T

F

R

50 mA

6V

°

I

D

FP

CEO

ECO

C

80 mW

0.5 A
40 V

5V

40 mA

°

C

150 mW

BV 3 750 Vr.m.s.

A

stg

–55 to +100
–55 to +150

°

C

°

C

C

C

*1

PW = 100

*1

AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

*2

µ

s, Duty Cycle = 1 %

Data Sheet P14945EJ1V0DS00

3

ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

PS2711-1

Diode Forward Voltage V

Reverse Current I
Terminal Capacitance C

Transistor Collector to Emitter Dark

Current

Coupled Current Transf er Rat i o

*1

C/IF

(I

)

CTR IF = 1 mA, VCE = 5 V 100 200 400 %

Collector Saturation Voltage V
Isolation Resistance R
Isolation Capacitance C

*2

*2

CTR rank

*1

Rise Time
Fall Time

N : 100 to 400 (%)
K : 200 to 400 (%)
L : 150 to 300 (%)
M: 100 to 200 (%)

Test circuit for switching time

*2

F

IF = 5 mA 1.15 1.4 V

R

VR = 5 V 5

t

V = 0 V, f = 1 MHz 30 pF

CEOIF

I

CE (sat)IF

t
t

= 0 mA, VCE = 40 V 100 nA

= 1 mA, IC = 0.2 mA 0.3 V

I-O

I-O

V

I-O

V = 0 V, f = 1 MHz 0.4 pF

r

VCC = 5 V, IC = 2 mA, RL = 100

f

= 1 kV

DC

Ω

10

11

4
5

µ

A

Ω

µ

s

Pulse Input

PW = 100 s

µ

Duty cycle = 1/10

In monitor

I

F

50 Ω

RL = 100 Ω

V

CC

V

OUT

4

Data Sheet P14945EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °°°°C, unless otherwise specified)

PS2711-1

DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE

100

80

(mW)

D

60

40

20

Diode Power Dissipation P

0

25

Ambient Temperature TA (˚C)

50

FORWARD CURRENT vs.
FORWARD VOLTAGE

100

10

(mA)

F

A

= +100 ˚C

T

+60 ˚C
+25 ˚C

1

75

100

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

200

(mW)

C

150

100

50

Transistor Power Dissipation P

0

25 50 75 100

Ambient Temperature TA (˚C)

COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE

10 000

(nA)

CEO

1 000

VCE = 40 V

100

20 V
10 V

0.1

Forward Current I

0.01

0.0 0.5 1.0 1.5 2.0

Forward Voltage VF (V)

–25 ˚C
–50 ˚C

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

25

IF = 10 mA

20

(mA)

C

15

10

Collector Current I

5

Collector to Emitter Voltage VCE (V)

5 mA

2 mA

6842010

0 ˚C

0.5 mA

1 mA

10

1

Collector to Emitter Dark Current I

–25

0

Ambient Temperature TA (˚C)

25

50

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

100

10 mA

5 mA
2 mA

(mA)

C

10

1 mA

1

Collector Current I

0.1

0.0 0.2 0.4 0.6 0.8 1.0

Collector Saturation Voltage V

F

= 0.5mA

I

75

CE(sat)

100

(V)

Data Sheet P14945EJ1V0DS00

5

PS2711-1

NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE

1.6

1.4

1.2

1.0

0.8

0.6

0.4
Normalized to 1.0

0.2

Normalized Current Transfer Ratio CTR

0.0

–50

–25

025

Ambient Temperature T

A

= 25 ˚C,

at T
I

F

= 1 mA, VCE = 5 V

50 75

A

(˚C)

SWITCHING TIME vs.

LOAD RESISTANCE

100

C

= 2 mA,

I

CC

= 5 V,

V
CTR = 200 %

µ

10

t

f

t

r

t

d

1

Switching Time t ( s)

t

s

100

CURRENT TRANSFER RATIO vs.
FORWARD CURRENT

500

V

CE

= 5 V,

n = 3

400

300

200

100

Current Transfer Ratio CTR (%)

0

0.01

0.1

1

Forward Current IF (mA)

SWITCHING TIME vs.
LOAD RESISTANCE

1 000

I

F

= 1 mA,

V

CC

= 5 V,

CTR = 200 %

100

µ

10

1

Switching Time t ( s)

10

100

t

f

t

s

t

r

t

d

0.1

0

–5

–10

–15

Normalized Gain Gv

–20

–25

0.1

Remark

The graphs indicate nominal characteristics.

10010

1 k

Load Resistance RL (kΩ)

FREQUENCY RESPONSE

RL = 1 kΩ

300 Ω

1

10

Frequency f (kHz)

100 1 000

100 Ω

10 k

0.1

100 1k 10 k 100 k

Load Resistance RL (kΩ)

LONG TERM CTR DEGRADATION

1.2
IF = 1 mA

1.0

0.8

0.6

0.4

CTR (Relative Value)

0.2

0

10

10

2

TA = 25 ˚C

TA = 60 ˚C

3

10

Time (Hr)

10

10

5

4

10

6

6

Data Sheet P14945EJ1V0DS00

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

1.55±0.1

1.75±0.1

PS2711-1

2.4±0.1

1.55±0.1

8.0±0.1

Tape Direction

PS2711-1-F3

Outline and Dimensions (Reel)

4.6±0.1

1

2

0

5.5±0.1

˚

12.0±0.2

PS2711-1-F4

7.4±0.1

0.3

1.5

2.0±0.5

1.5±0.5

6

0

˚

Packing: 3 500 pcs/reel

Data Sheet P14945EJ1V0DS00

21.0±0.8

φ

6.0±1

330

φ

80±5.0

13.0±0.5

φ

φ

12.4

+2.0
–0.0

7

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature 235 °C or below (package surface temperature)

• Time of temperature higher than 210 °C 30 seconds or less

• Number of reflows Three

• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)
210 ˚C

to 30 s

PS2711-1

100 to 160 ˚C

60 to 120 s

(preheating)

Package Surface Temperature T (˚C)

Time (s)

(2) Dip soldering

• Temperature 260 °C or below (molten solder temperature)

• Time 10 seconds or less

• Number of times One (Allowed to be dipped in solder including plastic mold portion.)

• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

(3) Cautions

•Fluxes

Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.

8

Data Sheet P14945EJ1V0DS00

[MEMO]

PS2711-1

Data Sheet P14945EJ1V0DS00

9

[MEMO]

PS2711-1

10

Data Sheet P14945EJ1V0DS00

[MEMO]

PS2711-1

Data Sheet P14945EJ1V0DS00

11

PS2711-1

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.

NEPOC is a trademark of NEC Corporation.

•

The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

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•

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parties arising from the use of these circuits, software and information.

•

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•

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M8E 00. 4