HIT 2SK3147-L, 2SK3147-S Datasheet
2SK3147(L),2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-731 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
RDS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
1
2
3
D
G
S
2SK3147(L),2SK3147(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
100 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
5A
Drain peak current I
D(pulse)
Note1
20 A
Body-drain diode reverse drain current I
DR
5A
Avalanche current I
AP
Note3
5A
Avalanche energy E
AR
Note3
2.5 mJ
Channel dissipation Pch
Note2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAVGS = ±16 V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 100 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state R
DS(on)
— 0.1 0.13 Ω ID = 3 A, VGS = 10 V
Note4
resistance R
DS(on)
— 0.13 0.18 Ω ID = 3 A, VGS = 4 V
Note4
Forward transfer admittance |yfs| 3.5 6 — S ID = 3 A, VDS = 10 V
Note4
Input capacitance Ciss — 420 — pF VDS = 10 V
Output capacitance Coss — 185 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 10 — ns ID = 3 A, VGS = 10 V
Rise time t
r
— 35 — ns RL = 10 Ω
Turn-off delay time t
d(off)
— 110 — ns
Fall time t
f
—60—ns
Body–drain diode forward voltage V
DF
— 0.85 — V IF = 5 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 85 — ns IF = 5 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3147(L),2SK3147(S)
3
Main Characteristics
40
30
20
10
0
50 100 150 200
50
20
10
5
1
0.1
12 5
10 20 50 100
10
8
6
4
2
0
12345
0
246810
Ta = 25 °C
Tc = 75°C
25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
10
8
6
4
2
3.5 V
3 V
V =2.5 V
GS
10 V
Pulse Test
6 V
4 V
500
2
0.2
0.5
200
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