DCR1279SD
DCR1279SD
Phase Control Thyristor
Replaces March 1998 version, DS4643-3.2 |
DS4643-4.0 January 2000 |
APPLICATIONS
■High Power Drives
■High Voltage Power Supplies
■DC Motor Control
FEATURES
■Double Side Cooling
■High Surge Capability
■High Mean Current
■Fatigue Free
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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DCR1279SD48 |
4800 |
Tvj = 0˚ to 125˚C, |
DCR1279SD47 |
4700 |
IDRM = IRRM = 150mA, |
DCR1279SD46 |
4600 |
VDRM, VRRM tp = 10ms, |
DCR1279SD45 |
4500 |
VDSM & VRSM = |
DCR1279SD44 |
4400 |
VDRM & VRRM + 100V |
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respectively |
Lower voltage grades available. |
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KEY PARAMETERS
VDRM |
4800V |
IT(AV) |
1088A |
ITSM |
15000A |
dVdt* |
300V/μs |
dI/dt |
200A/μs |
*Higher dV/dt selections available
Outline type code: D.
See package outline for further information.
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol |
Parameter |
Conditions |
Max. |
Units |
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Double Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load, |
1088 |
A |
IT(RMS) |
RMS value |
- |
1709 |
A |
IT |
Continuous (direct) on-state current |
- |
1574 |
A |
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Single Side Cooled (Anode side) |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
762 |
A |
IT(RMS) |
RMS value |
- |
1197 |
A |
IT |
Continuous (direct) on-state current |
- |
1034 |
A |
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1/9
DCR1279SD
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol |
Parameter |
Conditions |
Max. |
Units |
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Double Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load, |
860 |
A |
IT(RMS) |
RMS value |
- |
1350 |
A |
IT |
Continuous (direct) on-state current |
- |
1055 |
A |
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Single Side Cooled (Anode side) |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
590 |
A |
IT(RMS) |
RMS value |
- |
930 |
A |
IT |
Continuous (direct) on-state current |
- |
860 |
A |
SURGE RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; |
Tcase = 125oC |
12.0 |
kA |
I2t |
I2t for fusing |
VR = 50% VRRM - 1/4 sine |
0.72 x 106 |
A2s |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; |
Tcase = 125oC |
15.0 |
kA |
I2t |
I2t for fusing |
VR = 0 |
1.12 x 106 |
A2s |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
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Conditions |
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Min. |
Max. |
Units |
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Double side cooled |
dc |
- |
0.020 |
oC/W |
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R |
Thermal resistance - junction to case |
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Anode dc |
- |
0.036 |
oC/W |
th(j-c) |
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Single side cooled |
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Cathode dc |
- |
0.044 |
oC/W |
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Clamping force 22.0kN |
Double side |
- |
0.004 |
oC/W |
Rth(c-h) |
Thermal resistance - case to heatsink |
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with mounting compound |
Single side |
- |
0.008 |
oC/W |
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On-state (conducting) |
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- |
135 |
oC |
Tvj |
Virtual junction temperature |
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Reverse (blocking) |
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125 |
oC |
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Tstg |
Storage temperature range |
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-55 |
125 |
oC |
- |
Clamping force |
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22.0 |
24.0 |
kN |
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2/9
DCR1279SD
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
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Typ. |
Max. |
Units |
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I |
/I |
Peak reverse and off-state current |
At V |
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, T |
case |
= 125oC |
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150 |
mA |
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RRM |
DRM |
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RRM DRM |
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dV/dt |
Maximum linear rate of rise of off-state voltage |
To 67% V T = 125oC. Gate open circuit. |
- |
300 |
V/μs |
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DRM |
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From 67% VDRM |
to 1000A |
Repetitive 50Hz |
- |
100 |
A/μs |
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dI/dt |
Rate of rise of on-state current |
Gate source 10V, 5Ω |
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t ≤ 0.5μs, T |
= 125oC |
Non-repetitive |
- |
200 |
A/μs |
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r |
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j |
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V |
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Threshold voltage |
At T |
vj |
= 125oC |
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- |
1.14 |
V |
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T(TO) |
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rT |
On-state slope resistance |
At Tvj = 125oC |
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- |
0.587 |
mΩ |
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tgd |
Delay time |
VD = 67% VDRM, Gate source 30V, 15Ω |
- |
2.5 |
μs |
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t |
r |
= 0.5μs, T = 25oC |
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j |
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IL |
Latching current |
Tj = 25oC, VD = 5V |
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300 |
1000 |
mA |
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IH |
Holding current |
Tj = 25oC, Rg-k = ∞ |
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- |
500 |
mA |
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
DRM |
= 5V, T |
= 25oC |
4.0 |
V |
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case |
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I |
GT |
Gate trigger current |
V |
DRM |
= 5V, T |
= 25oC |
400 |
mA |
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case |
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V |
GD |
Gate non-trigger voltage |
At V |
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T |
= 125oC |
0.25 |
V |
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DRM |
case |
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VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
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VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
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VRGM |
Peak reverse gate voltage |
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5 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
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PGM |
Peak gate power |
See table, fig.4 |
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150 |
W |
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PG(AV) |
Mean gate power |
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5 |
W |
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3/9
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