DIODES US1D, US1J, US1B, US1M, US1K Datasheet

US1A - US1M

1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER

Features

Glass Passivated Die Construction

Diffused Junction

Ultra-Fast Recovery Time for High Efficiency

Low Forward Voltage Drop, High Current

Capability, and Low Power Loss

B

SMA

Surge Overload Rating to 30A Peak

Dim

Min

Max

Ideally Suited for Automated Assembly

A

2.29

2.92

Plastic Material: UL Flammability

A

C

B

4.00

4.60

Classification Rating 94V-0

C

1.27

1.63

D

0.15

0.31

Mechanical Data

D

E

4.80

5.59

Case: Molded Plastic

J

G

0.10

0.20

Terminals: Solder Plated Terminal - Solderable

H

0.76

1.52

per MIL-STD-202, Method 208

G

H

Polarity: Cathode Band or Cathode Notch

J

2.01

2.62

E

Marking: Type Number

All Dimensions in mm

Weight: 0.064 grams (approx.)

Mounting Position: Any

Maximum Ratings and Electrical Characteristics

TA = 25 C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

US1A

US1B

US1D

US1G

US1J

US1K

US1M

Unit

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

@ TT = 75 C

IO

1.0

A

Non-Repetitive Peak Forward Surge Current

IFSM

8.3ms Single half sine-wave Superimposed on Rated Load

30

A

(JEDEC Method)

Forward Voltage Drop

@ IF = 1.0A

VFM

1.0

1.3

1.7

V

Peak Reverse Current

@ TA = 25 C

IRM

5.0

A

at Rated DC Blocking Voltage

@ TA = 100 C

100

Reverse Recovery Time (Note 2)

trr

50

75

ns

Typical Junction Capacitance (Note 1)

Cj

20

10

pF

Typical Thermal Resistance, Junction to Terminal

R JT

30

C/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

C

Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.

DS16008 Rev. B1-2

1 of 2

US1A - US1M