Datasheet STTH5R06G-TR, STTH5R06G, STTH5R06D, STTH5R06FP, STTH5R06B-TR Datasheet (SGS Thomson Microelectronics)

...
Page 1
®
STTH5R06D/FP/B/G
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(typ.) 5 A
I
RM
5A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 40 ns
FEATURES AND BENEFITS
Ultrafast switching
Low reverse recovery current
Reduces switching losses
Low thermal resistance
DESCRIPTION
The STTH5R06D/FP/B/G, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions.
The device (available in TO-220AC, TO-220FPAC, D
2
PAK and DPAK) is also intended for use as a free wheeling diode in power supplies and other power switching applications.
TO-220FPAC
STTH5R06FP
K
A
NC
DPAK
STTH5R06B
K
A
K
A
K
TO-220AC
STTH5R06D
K
A
NC
D2PAK
STTH5R06G
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 600 V RMS forward current TO-220AC / TO-220FPAC / D2PAK 20 A
DPAK 10 A
I
F(AV)
Average forward current TO-220AC
Tc = 105°C δ = 0.5
5A TO-220FPAC DPAK / D2PAK
I
FSM
T
stg
Surge non repetitive forward current tp = 10 ms Sinusoidal 50 A Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
October 2002 - Ed: 3B
1/8
Page 2
STTH5R06D/FP/B/G
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC / DPAK / D2PAK 3.0 °C/W
TO-220FPAC 5.5
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage current
Forward voltage drop IF= 5 A Tj= 25°C 2.9 V
F
VR= 600V Tj = 25°C 20 µA
Tj = 125°C 25 250
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation : P=1.16xI
F(AV)
+ 0.128 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 25 ns
F
I
=1A dIF/dt=-50A/µs
F
40
VR= 30V
I
RM
S factor 0.35
VR= 400 V IF=5A dIF/dt = - 200A/µs
Tj = 125°C 5.0 6.0 A
Qrr 110 nC
tfr I
V
FP
Fig.1: Conduction losses versusaveragecurrent.
=5A dIF/dt=40A/µs
F
VFR=1.1xVFmax
Tj = 25°C 150 ns
4.5 V
Fig. 2: Forward voltage drop versus forward current.
P(W)
13 12 11 10
9 8 7 6 5 4 3 2 1 0
01234567
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
IFM(A)
50 45 40 35 30 25 20 15 10
5 0
0123456
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
(Maximum values)
VFM(V)
Tj=25°C
2/8
Page 3
STTH5R06D/FP/B/G
Fig. 3-1: Relative variation of thermal impedance
junctiontocase versus pulse duration (TO-220AC, DPAK, D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
2
PAK).
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
22
VR=400V
20
Tj=125°C
18 16 14 12 10
8 6 4 2 0
0 200 400 600 800 1000
IF=0.5 x IF(av)
IF=0.25 x IF(av)
IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)
Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
δ
=tp/T
T
tp
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns)
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
IF=2 x IF(av)
IF=IF(av)
dIF/dt(A/µs)
IF=0.5 x IF(av)
VR=400V Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence).
Qrr(nC)
350
VR=400V Tj=125°C
300
250
200
150
100
50
0
0 200 400 600 800 1000
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
Fig. 7: Softness factor versus dIF/dt (typical values).
S factor
0.70
IF=IF(av)
0.65
VR=400V Tj=125°C
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10 0 200 400 600 800 1000
dIF/dt(A/µs)
3/8
Page 4
STTH5R06D/FP/B/G
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00 25 50 75 100 125
IRM
Qrr
S factor
Tj(°C)
IF=IF(av) VR=400V Tj=125°C
Reference: Tj=125°C
Fig. 10: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns)
120
100
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
20
IF=IF(av) Tj=125°C
18 16 14 12 10
8 6 4 2 0
0 100 200 300 400 500
dIF/dt(A/µs)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
Vosc=30mV
Tj=25°C
80
60
40
20
dIF/dt(A/µs)
0
0 100 200 300 400 500
Fig. 12: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed circuitboardFR4, Cu=35µm) (DPAKand D
Rth(j-a)(°C/W)
100
90 80 70 60 50 40 30 20 10
0
02468101214161820
S(cm²)
2
PAK).
VR(V)
10
1 10 100 1000
4/8
Page 5
PACKAGE MECHANICAL DATA
TO-220FPAC
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F
STTH5R06D/FP/B/G
DIMENSIONS
REF.
A
B
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039
L7
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
Millimeters Inches
Min. Max. Min. Max.
PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
C
L7
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
5/8
Page 6
STTH5R06D/FP/B/G
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2
FOOT PRINT DIMENSIONS (in millimeters) DPAK
6.7
6.7
3
3
1.61.6
2.32.3
6/8
Page 7
PACKAGE MECHANICAL DATA
2
PAK
D
E
L2
L
L3
B2 B
G
* FLAT ZONE NO LESS THAN 2mm
C2
A1
STTH5R06D/FP/B/G
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M
*
V2
M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ.
V2
Millimeters Inches
Min. Max. Min. Max.
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
1.30
3.70
8.90
5.08
7/8
Page 8
STTH5R06D/FP/B/G
Ordering code Marking Package Weight Base qty Deliverymode
STTH5R06D STTH5R06D TO-220AC 1.9 g 50 Tube
STTH5R06FP STTH5R06FP TO-220FPAC 1.7 g 50 Tube
STTH5R06B STTH5R06B DPAK 0.3 g 75 Tube
STTH5R06B-TR STTH5R06B DPAK 0.3 g 2500 Tape & reel
STTH5R06G STTH5R06G D
STTH5R06G-TR STTH5R06G D
Cooling method: by conduction (C)
Recommended torque value (TO-220AC): 0.55 Nm
Maximum torque value (TO-220AC / TO-220FPAC): 0.7 Nm
Epoxy meets UL 94,V0
2
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & reel
Informationfurnished is believedtobe accurate andreliable. However, STMicroelectronics assumesno responsibility fortheconsequences of useof such informationnor for anyinfringement of patents orother rights ofthird parties whichmayresult from itsuse. No licenseis granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
8/8
Loading...