The STTH5R06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
continuous mode power factor corrections and
hard switching conditions. This device is also
intended for use as a free wheeling diode in power
supplies and other power switching applications.
5 A
600 V
175°C
1.4 V
40 ns
TO-220AC
STTH5R06D
K
A
NC
D2PA K
STTH5R06G
STTH5R06
A
K
TO-220FPAC
STTH5R06FP
K
NC
DPAK
STTH5R06B
A
K
A
Table 2: Order Codes
Part NumberMarking
STTH5R06DSTTH5R06D
STTH5R06FPSTTH5R06FP
STTH5R06BSTTH5R06B
Part NumberMarking
STTH5R06B-TRSTTH5R06B
STTH5R06GSTTH5R06G
STTH5R06G-TRSTTH5R06G
Table 3: Absolute Ratings (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage600V
RMS forward voltage
TO-220AC / TO-220FPAC / D2PAK
20A
DPAK10
I
F(AV)
Average forward current TO-220AC / DPAK
Tc = 135°C δ = 0.55A
/ D2PAK
TO-220FPACTc = 105°C δ = 0.55
I
FSM
T
T
September 2004REV. 4
Surge non repetitive forward currenttp = 10ms sinusoidal50A
Storage temperature range-65 to + 175°C
stg
Maximum operating junction temperature175°C
j
1/9
Page 2
STTH5R06
Table 4: Thermal Resistance
SymbolParameterValue (max).Unit
R
th(j-c)
Table 5: Static Electrical Characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
IR *Reverse leakage current Tj = 25°CVR = V
VF **Forward voltage dropTj = 25°CIF = 5A2.9V
Pulse test:* tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 1.164 x I
Table 6: Dynamic Characteristics
SymbolParameterTest conditionsMin. Typ Max. Unit
t
Junction to case
** tp = 380 µs, δ < 2%
Reverse recovery
rr
time
TO-220AC / DPA / D2PAK
3.0°C/W
TO-220FPAC5.5
RRM
20µA
Tj = 125°C25250
Tj = 125°C1.41.8
+ 0.128 I
F(AV)
F2(RMS)
Tj = 25°CIF = 0.5A Irr = 0.25A IR =1A25ns
IF = 1A dIF/dt = -50 A/µs VR =30V40
I
RM
Reverse recovery
current
Tj = 125°C IF = 5A VR = 400V
dIF/dt = -200 A/µs
S factor Softness factor0.35
QrrReverse recovery
charges
t
V
Figure 1: Conduction losses versus average
current
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
01234567
Forward recovery
fr
time
Forward recovery
FP
voltage
δ = 0.05
δ = 0.1
δ = 0.2
I(A)
F(AV)
Tj = 25°CIF = 5A dIF/dt = 40 A/µs
VFR = 1.1 x V
Fmax
Tj = 25°CIF = 5A dIF/dt = 40 A/µs
VFR = 1.1 x V
Fmax
Figure 2: Forward voltage drop versus forward
current
I (A)
FM
δ = 0.5
δ
=tp/T
δ = 1
T
tp
50
45
40
35
30
25
20
15
10
5
0
0123456
T =125°C
j
(typical values)
T =125°C
j
(maximum values)
V (V)
FM
5.06.0A
110nC
150ns
4.5V
T =25°C
j
(maximum values)
2/9
Page 3
STTH5R06
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC, DPAK, D2PAK)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
δ
=tp/T
T
tp
Figure 5: Peak reverse recovery current versus
dIF/dt (90% confidence)
I (A)
RM
22
V =400V
R
T =125°C
j
20
18
16
14
12
10
8
6
4
2
0
02004006008001000
I =0.5 x I
FF(AV)
I =0.25 x I
FF(AV)
I=I
dI /dt(A/µs)
F
FF(AV)
I =2 x I
FF(AV)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-031.E-021.E-011.E+001.E+01
t (s)
p
δ
=tp/T
T
tp
Figure 6: Reverse recovery time versus dIF/dt
(90% confidence)
t (ns)
rr
80
70
I =2 x I
60
50
40
30
20
10
0
02004006008001000
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
V =400V
R
T =125°C
j
Figure 7: Reverse recovery charges versus
dIF/dt (90% confidence)
Q (nC)
rr
350
V =400V
R
T =125°C
j
300
I =2 x I
250
200
150
100
50
0
02004006008001000
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
Figure 8: Softness factor versus dIF/dt (typical
values)
S factor
0.70
I=I
FF(AV)
V =400V
R
0.65
T =125°C
j
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
02004006008001000
dI /dt(A/µs)
F
3/9
Page 4
STTH5R06
Figure 9: Relative variations of dynamic
parameters versus junction temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
255075100125
I
RM
S factor
I=I
Q
RR
T (°C)
j
FF(AV)
V =400V
R
Reference:T =125°C
j
Figure 11: Forward recovery time versus dIF/dt
(90% confidence)
t (ns)
fr
120
100
80
I=I
FF(AV)
V =1.1 x V max.
FRF
T =125°C
j
Figure 10: Transient peak forward voltage
versus dIF/dt (90% confidence)
V (V)
FP
20
I=I
FF(AV)
T =125°C
18
j
16
14
12
10
8
6
4
2
0
0100200300400500
dI /dt(A/µs)
F
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
V =30mV
OSCRMS
T =25°C
j
60
40
20
dI /dt(A/µs)
0
0100200300400500
F
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU=35µm) (DPAK and D2PAK)
07-Sep-20044Tcases values splitted for TO-220FPAC package
1.48 g50Tube
1.48 g1000Tape & reel
8/9
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STTH5R06
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