Page 1
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH5L06
I
F(AV)
V
RRM
(max) 150 µA
I
R
5A
600 V
Tj (max) 175 °C
(max) 1.05 V
V
F
trr (max) 95 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching & conduction losses
Low thermal resistance
■
DESCRIPTION
The STTH5L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
The device is also intended for use as a free
wheeling diode in powersupplies and other power
switching applications.
DO-201AD
STTH5L06
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 20 A
Average forward current Tl = 50°C δ =0.5 5 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 110 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C
November 2001 - Ed: 1A
1/5
Page 2
STTH5L06
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-l)
R
th (j-a)
Note 1: withrecommended pad layout (see Fig. 12)
Junction to lead L = 10mm 20 °C/W
Junction to ambient (note 1) L = 10mm 75
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 5 A Tj = 25°C 1.3 V
F
VR= 600V Tj = 25°C 5 µA
Tj = 150°C 25 150
Tj = 150°C 0.85 1.05
To evaluate the maximum conduction losses use the following equation :
P=0.89xI
F(AV)
+ 0.033 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
time
=1A dIF/dt=-50A/µs
I
F
Tj = 25°C 65 95 ns
VR= 30V
I
=5A dIF/dt = 100 A/µs
F
Tj = 25°C 150 ns
VFR=1.1xVFmax
IF=5A dIF/dt = 100 A/µs Tj = 25°C 7 V
2/5
Page 3
STTH5L06
Fig.1: Conduction lossesversusaverage current.
P(W)
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration
(DO-201AD, epoxy FR4, Lleads = 10mm).)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
100.0
Tj=150°C
Tj=150°C
(Maximum values)
(Maximum values)
10.0
1.0
Tj=150°C
Tj=150°C
(Typical values)
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Fig.4:Peak reverse recoverycurrentversus dIF/dt
(90% confidence).
IRM(A)
8
VR=400V
Tj=125°C
7
6
5
4
IF=0.25 x IF(av)IF=0.25 x IF(av)
3
2
1
0
0 102030405060708090100
IF=0.5 x IF(av)IF=0.5 x IF(av)
IF=IF(av)IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)IF=2 x IF(av)
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
1000
900
800
700
600
500
400
300
200
100
0
IF=2 x IF(av)IF=2 x IF(av)
IF=IF(av)IF=IF(av)
IF=0.5 x IF(av)IF=0.5 x IF(av)
dIF/dt(A/µs)
0 102030405060708090100
VR=400V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
500
VR=400V
450
Tj=125°C
400
350
300
250
200
150
100
50
0
0 102030405060708090100
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
3/5
Page 4
STTH5L06
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
2.4
IF=IF(av)
VR=400V
2.2
Tj=125°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 102030405060708090100
dIF/dt(A/µs)
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
10
IF=IF(av)
Tj=125°C
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125
S factor
IRM
QRR
Tj(°C)
IF=IF(av)
VR=400V
Reference: Tj=125°C
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/µs)
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
10
VR(V)
1
1 10 100 1000
4/5
F=1MHz
Vosc=30mV
Tj=25°C
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuitboard FR4, copperthickness: 35µm)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
012345678910
S(cm²)
L lead=10mm
Page 5
PACKAGE MECHANICAL DATA
DO-201AD
STTH5L06
BA
note 1
DIMENSIONS
REF.
Min. Max. Min. Max.
A 9.50 0.374
B 25.40 1.000
C 5.30 0.209
D 1.30 0.051
E 1.25 0.049
E
ØD ØD
note 2
E
1 - The lead diameter ∅ D is not controlled over zone E
2 - The minimum length which must stay straight be-
tween the right angles after bending is 0.59"(15 mm)
note 1
B
ØC
NOTESMillimeters Inches
Ordering code Marking Package Weight Base qty Delivery mode
STTH5L06 STTH5L06 DO-201AD 600 Ammopack
STTH5L06RL STTH5L06 DO-201AD 1900 Tape & reel
■
Epoxy meets UL 94,V0
■
Lead bending and cutting: refer to ST application note AN1471
Informationfurnished is believedto be accurate andreliable. However, STMicroelectronicsassumesno responsibility forthe consequences of
useof such informationnor for anyinfringement of patentsor other rights ofthird parties whichmay result fromits use. Nolicenseis granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
Loading...