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®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH30R06CW
I
F(AV)
V
RRM
(typ.) 8 A
I
RM
2x15A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 50 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching losses
Low thermal resistance
■
DESCRIPTION
The STTH30R06CW, which is using ST Turbo 2
600V technology, is specially suited as boost
diodeincontinuousmodepowerfactorcorrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
A1
TO-247
STTH30R06CW
A2
K
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 30 A
Average forward current Per diode
Per device
15
30
Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
July 2001 - Ed: 1A
A
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STTH30R06CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode 1.5 ° C/W
Total 1.0
R
th (c)
Coupling 0.5
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 15 A Tj = 25°C 2.9 V
F
VR= 600V Tj = 25°C 60 µ A
Tj = 125°C 70 800
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.043 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 30 ns
F
I
=1A dIF/dt=-50A/µs
F
50
VR= 30V
I
RM
S factor 0.15
VR= 400 V IF= 15A
dIF/dt = - 200A/µ s
Tj = 125°C 7.5 9.0 A
Qrr 220 nC
tfr I
V
FP
=15A dIF/dt = 120 A/µ s
F
VFR=1.1xVFmax
Tj = 25°C 200 ns
6V
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Page 3
STTH30R06CW
Fig. 1: Conduction losses versus average current
(per leg).
P(W)
40
35
30
25
20
15
10
5
0
024681 01 21 41 61 82 0
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current (per leg).
IFM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0123456
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
VFM(V)
Tj=25°C
(Maxumim values)
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence, per leg).
dI
F
IRM(A)
30
VR=400V
Tj=125°C
25
20
15
10
5
IF=0.25 x IF(av) IF=0.25 x IF(av)
IF=0.5 x IF(av) IF=0.5 x IF(av)
dIF/dt(A/µs)
0
0 200 400 600 800 1000
IF=2 x IF(av) IF=2 x IF(av)
IF=IF(av) IF=IF(av)
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence, per leg).
trr(ns)
100
90
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
IF=0.5 x IF(av) IF=0.5 x IF(av)
IF=IF(av) IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av) IF=2 x IF(av)
VR=400V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence, per leg).
Qrr(nC)
800
VR=400V
Tj=125°C
700
600
500
400
300
200
100
0
0 200 400 600 800 1000
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
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STTH30R06CW
Fig. 7: Softness factor versus dI F/dt (typical
values, per leg).
S factor
0.35
IF=IF(av)
VR=400V
Tj=125°C
0.30
0.25
0.20
0.15
dIF/dt(A/µs)
0.10
0 200 400 600 800 1000
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence, per leg).
dI
F
VFP(V)
12
IF=IF(av)
11
Tj=125°C
10
9
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500
dIF/dt(A/µs)
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
IRM
Qrr
25 50 75 100 125
S factor
Tj(°C)
IF=IF(av)
VR=400V
Tj=125°C
Reference: Tj=125°C
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence, per leg).
tfr(ns)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500
dIF/dt(A/µs)
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values, per leg).
C(pF)
1000
100
VR(V)
10
1 10 100 1000
4/5
F=1MHz
Vosc=30mV
Tj=25°C
Page 5
PACKAGE MECHANICAL DATA
TO-247
STTH30R06CW
DIMENSIONS
REF.
V
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
V
Dia.
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
H
A
F1 3.00 0.118
F2 2.00 0.078
L5
L
L4 L2
F2
F1
V2
F(x3)
G
= =
L1
F3
L3
F4
D
ME
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5 ° 5 °
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Ordering code Marking Package Weight Base qty Delivery mode
STTH30R06CW STTH30R06CW TO-247 4.36 g 30 Tube
■
Epoxy meets UL 94,V0
Informationfurnishedisbelievedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
useof such information nor for any infringement of patents or other rights ofthird parties which may result from its use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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