Datasheet STTH2003CT, STTH2003CG, STTH2003CF Datasheet (SGS Thomson Microelectronics)



HIGH FREQUENCYSECONDARY RECTIFIER

MAJORPRODUCT CHARACTERISTICS

STTH2003CT/CG/CF

I

F(AV)

V

RRM

2 x 10 A

300 V

Tj (max) 175 °C

(max) 1 V

V

F

trr(max) 35 ns

FEATURESAND BENEFITS

COMBINESHIGHESTRECOVERYAND
REVERSEVOLTAGEPERFORMANCE

ULTRA-FAST, SOFTANDNOISE-FREE
RECOVERY

DESCRIPTION

Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequencyDC/DC converters.

Packaged in TO-220AB, ISOWATT220AB or

2

D

PAK, this device is especially intended for

secondaryrectification.

ABSOLUTE RATINGS (limitingvalues, perdiode)

A1

A2

TO-220AB

STTH2003CT

A1

K

K

A2

A1

2

PAK

D

STTH2003CG

A2

K

A1

A2

K

ISOWATT220AB

STTH2003CF

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitivepeakreverse voltage
RMSforwardcurrent
Averageforward

current δ =0.5

I

FSM

I

RSM

T

stg

Tj

October 1999 - Ed: 6C

Surgenonrepetitiveforwardcurrent tp = 10ms sinusoidal
Non repetitiveavalanche current tp = 20 µs square
Storagetemperaturerange
Maximumoperatingjunction temperature

TO-220AB/ D2PAK
ISOWATT220AB

Tc=140°C Perdiode

Perdevice

Tc=125°C

300 V

30 A
10

20

110 A

5A

-65+ 175 °C
175 °C

A

1/7

STTH2003CT/CG/CF

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junctionto case TO-220AB/ D2PAK

ISOWATT220AB

R

th (c)

TO-220AB/ D2PAK
ISOWATT220AB

STATICELECTRICALCHARACTERISTICS (perdiode)

Symbol Parameter Testsconditions Min. Typ. Max. Unit

Per diode 2.5 °C/W

Total 1.3

Per diode 3.9

Total 3.2

Coupling 0.1
Coupling 2.5

*

I

R

Reverseleakage
current

V

**

F

Forwardvoltagedrop I

=300V Tj = 25°C

V

R

Tj = 125°C

=10A Tj=25°C

F

Tj = 125°C

30 300

0.85 1

20 µA

1.25 V

Pulsetest: * tp= 5 ms, δ <2%

** tp = 380 µs, δ <2%

Toevaluatethemaximum conductionlossesuse the following equation:
P= 0.75x I

F(AV)

+ 0.025I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Tests conditions Min. Typ. Max. Unit

trr

tfr

V

FP

= 0.5 A Irr= 0.25A IR=1A Tj=25°C

I

F

I

=1A dIF/dt= - 50 A/µsVR=30V

F

I

=10A dIF/dt= 100 A/µs

F

=1.1 x VFmax.

V

FR

Tj = 25°C

25 ns
35

230 ns

3.5 V

2/7

S

factor

I

RM

Vcc =200V IF=10A
dI

/dt = 200 A/µs

F

Tj = 125°C

0.3 ­8A

STTH2003CT/CG/CF

Fig.1:

Conductionlosses versus averagecurrent

(perdiode).

P1(W)

14

δ = 0.05

δ = 0.1

δ = 0.2

δ= 0.5

12
10

8

δ =1

6
4
2
0

024681012

IF(av)(A)

T

=tp/T tp

δ

Fig. 3-1: Relative variation of thermal impedance
junctionto case versus pulse duration (TO-220AB

2

.

PAK)

/D

Zth(j-c)/Rth(j-c)

1.0

Fig. 2:

Forward voltage drop versus forward

current(maximum values,perdiode).

IFM(A)

200
100

Tj=125°C

Tj=25°C

10

Tj=75°C

1

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

VFM(V)

Fig. 3-2: Relative variation of thermal impedance

junction to case versus pulse duration
(ISOWATT220AB).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

0.0

Fig. 4:

dI

Single pulse

tp(s)

1E-3 1E-2 1E-1 1E+0

Peak reverse recovery current versus

/dt(90%confidence,per diode).

F

δ

=tp/T

T

tp

IRM(A)

16
14
12

VR=200V
Tj=125°C

IF=2*IF(av)

IF=IF(av)

10

8
6

IF=0.5*IF(av)

4
2
0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

0.8

δ= 0.5

0.6

δ= 0.2

0.4

δ = 0.1

0.2

0.0

Fig. 5:

Single pulse

tp(s)

1E-2 1E-1 1E+0 1E+1

Reverserecovery time versusdI

δ

=tp/T

F

T

tp

/dt (90%

confidence,per diode).

trr(ns)

100

80

60

IF=IF(av)

IF=2*IF(av)

40

20

IF=0.5*IF(av)

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

VR=200V
Tj=125°C

3/7

STTH2003CT/CG/CF

Fig.6: Softnessfactor (tb/ta)versusdIF/dt(typical

values,perdiode).

S factor

0.60

VR=200V

0.50

0.40

0.30

0.20

0.10

0.00
0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Tj=125°C

Fig. 8: Transient peak forward voltage versus
dI

/dt (90%confidence,perdiode) (TO-220AB).

F

VFP(V)

10

IF=IF(av)
Tj=125°C

8

6

Fig. 7:

Relative variation of dynamic parameters

versusjunctiontemperature(reference:Tj=125°C).

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

Fig. 9:

Forward recoverytime versus dI

S factor

IRM

Tj(°C)

/dt (90%

F

confidence,per diode).

tfr(ns)

500

VFR=1.1*VF max.

400

300

IF=IF(av)
Tj=125°C

4

2

0

0 50 100 150 200 250 300 350 400 450 500

Fig. 10:

Thermal resistance junction to ambient

dIF/dt(A/µs)

versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)

2

PAK)

(D

Rth(j-a) (°C/W)

80
70
60
50
40
30
20
10

0

0 5 10 15 20 25 30 35 40

S(Cu) (cm )

200

100

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

4/7

PACKAGEMECHANICAL DATA

2

PAK

D

STTH2003CT/CG/CF

DIMENSIONS

L2

A

E

C2

REF.

A 4.40 4.60 0.173 0.181

Millimeters Inches

Min. Max. Min. Max.

A1 2.49 2.69 0.098 0.106

D

L

L3

A1

B2
B

C

R

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

M

*

* FLATZONE NO LESSTHAN2mm

V2

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

FOOT PRINT DIMENSIONS

2

D

PAK

16.90

10.30

8.90

(in millimeters)

5.08

1.30

3.70

5/7

STTH2003CT/CG/CF

PACKAGEMECHANICAL DATA

ISOWATT220AB

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106

D 2.50 2.75 0.098 0.108

E 0.40 0.70 0.016 0.028

F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.40 2.70 0.094 0.106

H 10.00 10.40 0.394 0.409
L2 16.00typ. 0.630typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

6/7

PACKAGEMECHANICAL DATA

TO-220AB

H2

Dia

L5

L6

L2

F2

F1

F

G1

G

L9

L4

STTH2003CT/CG/CF

DIMENSIONS

REF.

A

C

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051

L7

D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

D

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116

M

E

L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102typ.

Diam. 3.75 3.85 0.147 0.151

Millimeters Inches

Min. Max. Min. Max.

Orderingcode Marking Package Weight Base qty

Delivery

mode

STTH2003CT STTH2003CT TO-220AB 2.2 g. 50 Tube

2

STTH2003CG STTH2003CG D

PAK 1.48 g. 50 Tube

STTH2003CG-TR STTH2003CG D2PAK 1.48 g. 500 Tape&reel

STTH2003CF STTH2003CF ISOWATT220AB 2.08 g. 50 Tube

Coolingmethod:by conduction(C)
Recommendedtorquevalue:0.55N.m.
Maximumtorque value: 0.70N.m.
Epoxymeets UL 94,V0

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