
ES3A - ES3D
ES3A - ES3D
Discrete POWER & Signal
Technologies
Features
• For surface mount applications.
•Glass passivated junction.
0.124 (3.150)
0.108 (2.743)
0.280 (7.112)
0.260 (6.604)
2
1
0.245 (6.223)
0.220 (5.588)
•Low profile package.
0.320 (8.128)
•Easy pick and place.
• Built-in strain relief.
•Superfast recovery times for
high efficiency.
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
0.060 (1.524)
0.030 (0.762)
0.305 (7.747)
0.008 (0.203)
0.004 (0.102)
0.103 (2.616)
0.079 (2.007)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JL
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Average Rectified Current
.375 " lead length @ T
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient** 47
Thermal Resistance, Junction to Lead** 12
Storage Temperature Range -50 to +150
Operating Junction Temperature -50 to +150
= 25°C unless otherwise noted
A
= 75°C
A
3.0 A
100 A
2.66
21.28
mW/°C
W
°C/W
°C/W
°C
C
°
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
3A 3B 3C 3D
Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
T
= 100°C
A
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
RR
= 0.25 A
Maximum Forward Voltage @ 3.0 A 0.90 V
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
1999 Fairchild Semiconductor Corporation
50 100 150 200 V
10
500
20 nS
45 pF
A
µ
A
µ
ES3A-ES3D, Rev. A

T ypical Characteristics
ES3A - ES3D
Forward Current Derating Curve
3.5
3
2.5
2
SINGLE PHASE
HALF WAVE
1.5
60HZ
RESISTIVE OR
1
INDUCTIVE LOAD
.375" (9.0mm) LEAD
FORWARD CURRE NT (A)
0.5
LENGTHS
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Non-Repetitive Surge Current
200
100
50
10
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER OF CY CLES AT 60 Hz
Forward Characteristics
100
10
1
0.1
FORWARD CURRENT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
º
T = 25 C
A
Pulse Width = 300µs
2% Duty Cycle
FORWARD VOLTAGE (V)
Reverse Characteristics
1000
T = 100 C
º
µ
100
10
1
REVERSE CURRENT ( A)
0.1
0 20406080100120140
PERCENT OF RA TE D PEA K REVER SE VO LT AG E (%)
A
º
T = 75 C
A
º
T = 25 C
A
100
90
80
70
60
50
40
30
CAPACITANCE (p F )
20
10
0
0.1 0.5 1 5 10 20 50 100 500
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Ω
50
NONINDUCTIVE
DUT
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(-)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
Junction Capacitance
REVERSE VOLTAGE (V)
-0.25A
+0.5A
trr
0
-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm
ES3A-ES3D, Rev. A

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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.