Page 1
ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
ES1F - ES1J Fast Rectifiers
July 2007
SMA(DO-214AC)
Color Band Denotes Cathode
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Value
Symbol Parameter
V
I
F(AV)
I
FSM
T
P
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Maximum Repetitive Reverse Voltage 300 400 500 600 V
RRM
Average Rectified Forward Current 1.0 A
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
T
Junction Temperature 150 °C
J
Storage Temperature Range -55 to 150 °C
STG
Power Dissipation 1.47 W
D
ES1F ES1G ES1H ES1J
30 A
Units
Thermal Characteristics
Symbol Parameter Value Units
R
θJA
R
θJL
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Electrical Characteristics T
Symbol Parameter Value Units
Thermal Resistance, Junction to Ambient * 85 °C/W
Thermal Resistance, Junction to Lead * 35 °C/W
= 25°C unless otherwise noted
C
V
Maximum Forward Voltage @ IF = 1.0 A 1.3 1.7 V
F
Maximum Reverse Recovery Time
T
rr
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Reverse Current @ rated VR TA = 25°C
I
R
TA = 100°C
Typical Junction Capacitance
C
j
VR = 4.0 V, f = 1.0 MHz
10.0 8.0 pF
35 ns
5.0
100
uA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
ES1F - ES1J Rev. A
Page 2
Typical Performance Characteristics
ES1F - ES1J Fast Rectifiers
FIG.1- MAXIMUM FORWARD CURRENT DERATING
1.2
AVERAGE FORWARD CURRENT. (A)
50
CURVE
1.0
RESISTIVE OR
0.8
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0.6
0.4
0.2
0
80 90 100 120 140 150130110
FIG.3- TYPICAL INSTANTANEOUS
Tj=25 C
PULSE WIDTH-300 S
10
1% DUTY CYCLE
10
Tj=25 oC
PULSE WIDTH 300uS
1% DUTY CYCLE
1
1
LEAD TEMPERATURE. ( C)
FORWARD CHARACTERISTICS
0
ES1A - D
ES1F-1G
ES1F - 1G
o
ES1H-1J
0.1
0.1
INSTANTANEOUS FORWARD CURRENT. (A)
ES1H - 1J
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
8.3ms Single Half Sine Wave
25
20
15
10
5.0
PEAK FORWARD SURGE CURRENT. (A)
1
NUMBER OF CYCLES AT 60Hz
(JEDEC Method) at T =120 C
10
o
L
100
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
0
Tj=125 C
10
1
INSTANTANEOUS REVERSE CURRENT. ( A)
0.1
Tj=85 C
Tj=25 C
0
0
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
14
12
10
8.0
6.0
4.0
JUNCTION CAPACITANCE.(pF)
2.0
0
0
1
REVERSE VOLTAGE. (V)
ES1 F - G
ES1 H -J
10
0
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
ES1F - ES1J Rev. A
2 www.fairchildsemi.com
Page 3
Package Dimensions
ES1F - ES1J Fast Rectifiers
SMA / DO - 214AC
ES1F - ES1J Rev. A
Dimensions in Millimeters
3 www.fairchildsemi.com
Page 4
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Rev. I30
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