TOSHIBA TC74LCX32F, TC74LCX32FN, TC74LCX32FT, TC74LCX32FK Technical data

TC74LCX32F/FN/FT/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74LCX32F,TC74LCX32FN,TC74LCX32FT,TC74LCX32FK

Low-Voltage Quad 2-Input OR Gate with 5-V Tolerant Inputs and Outputs

The TC74LCX32 is a high-performance CMOS 2-input OR gate. Designed for use in 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low-power dissipation.

The device is designed for low-voltage (3.3 V) VCC applications, but it could be used to interface to 5-V supply environment for inputs.

All inputs are equipped with protection circuits against static discharge.

Features

•Low-voltage operation: VCC = 1.65 to 3.6 V

•High-speed operation: tpd = 5.5 ns (max) (VCC = 3.0 to 3.6 V)

•Output current: |IOH|/IOL = 24 mA (min) (VCC = 3.0 V)

•Latch-up performance: ±500 mA

•Available in JEDEC SOP, JEITA SOP, TSSOP and VSSOP (US)

•Power-down protection is provided on all inputs and outputs

•Pin and function compatible with the 74 series (74AC/VHC/HC/F/ALS/LS etc.) 32 type

Note: xxxFN (JEDEC SOP) is not available in Japan.

TC74LCX32F

TC74LCX32FN

TC74LCX32FT

TC74LCX32FK

Weight
SOP14-P-300-1.27A	: 0.18 g (typ.)
SOL14-P-150-1.27	: 0.12 g (typ.)
TSSOP14-P-0044-0.65A	: 0.06 g (typ.)
VSSOP14-P-0030-0.50	: 0.02 g (typ.)

Note: The Electrical Characteristics of VCC=1.8±0.15V is only applicable for products which manufactured from January 2009 onward.

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TC74LCX32F/FN/FT/FK

Pin Assignment (top view)

IEC Logic Symbol

1

1A

2

> 1

3

1Y

1A

1

14

VCC

1B

4

2A

6

2Y

1B

2

13

4B

5

2B

1Y

3

12

4A

3A

9

8

3Y

10

3B

12

2A

4

11

4Y

4A

11

4Y

13

2B

5

10

3B

4B

2Y

6

9

3A

GND

7

8

3Y

Truth Table

Inputs

Outputs

A

B

Y

L

L

L

L

H

H

H

L

H

H

H

H

Absolute Maximum Ratings (Note 1)

Characteristics

Symbol

Rating

Unit

Power supply voltage

VCC

−0.5 to 7.0

V

DC input voltage

VIN

−0.5 to 7.0

V

−0.5 to 7.0

(Note 2)

DC output voltage

VOUT

V

−0.5 to VCC + 0.5

(Note 3)

Input diode current

IIK

−50

mA

Output diode current

IOK

±50

(Note 4)

mA

DC output current

IOUT

±50

mA

Power dissipation

PD

180

mW

DC VCC/ground current

ICC/IGND

±100

mA

Storage temperature

Tstg

−65 to 150

°C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 2: VCC = 0 V
Note 3:	High or low state. IOUT absolute maximum rating must be observed.
Note 4:	VOUT < GND, VOUT > VCC
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				TC74LCX32F/FN/FT/FK
	Operating Ranges (Note 1)
	Characteristics	Symbol	Rating	Unit
	Power supply voltage	VCC	1.65 to 3.6	V
			1.5 to 3.6
				(Note 2)
	Input voltage	VIN	0 to 5.5	V
		VOUT	0 to 5.5	(Note 3)
	Output voltage		0 to VCC	V
				(Note 4)
		IOH/IOL	±24	(Note 5)
	Output current		±12	mA
				(Note 6)
	Operating temperature	Topr	−40 to 85	°C
	Input rise and fall time	dt/dv	0 to 10	(Note 7) ns/V

Note 1: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND.

Note 2: Data retention only

Note 3: VCC = 0 V

Note 4: High or low state

Note 5: VCC = 3.0 to 3.6 V

Note 6: VCC = 2.7 to 3.0 V

Note 7: VIN = 0.8 to 2.0 V, VCC = 3.0 V

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TC74LCX32F/FN/FT/FK

Electrical Characteristics

DC Characteristics (Ta = −40 to 85°C)

	Characteristics		Symbol	Test Condition			Min	Max	Unit
						VCC (V)
						1.65 to 2.3	VCC×0.9
		H-level	VIH			2.3 to 2.7	1.7
	Input voltage					2.7 to 3.6	2.0		V
						1.65 to 2.3		VCC×0.1
		L-level	VIL			2.3 to 2.7		0.7
						2.7 to 3.6		0.8
					IOH = −100 μA	1.65 to 3.6	VCC−0.2
					IOH = −4 mA	1.65	1.05
		H-level	VOH	VIN = VIH or VIL	IOH = −8 mA	2.3	1.7
					IOH = −12 mA	2.7	2.2
					IOH = −18 mA	3.0	2.4
	Output voltage				IOH = −24 mA	3.0	2.2		V
					IOL = 100 μA	1.65 to 3.6		0.2
					IOL = 4 mA	1.65		0.45
		L-level	VOL	VIN = VIL	IOL = 8 mA	2.3		0.7
					IOL = 12 mA	2.7		0.4
					IOL = 16 mA	3.0		0.4
					IOL = 24 mA	3.0		0.55
	Input leakage current		IIN	VIN = 0 to 5.5 V		1.65 to 3.6		±5.0	μA
	Power-off leakage current		IOFF	VIN/VOUT = 5.5 V		0		10.0	μA
	Quiescent supply current		ICC	VIN = VCC or GND		1.65 to 3.6		10.0
				VIN = 3.6 to 5.5 V		1.65 to 3.6		±10.0	μA
	Increase in Icc per input		ICC	VIH = VCC − 0.6 V		2.7 to 3.6		500

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