TC74LCX04F/FN/FT/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74LCX04F,TC74LCX04FN,TC74LCX04FT,TC74LCX04FK
Low-Voltage Hex Inverter with 5-V Tolerant Inputs and Outputs
The TC74LCX04 is a high-performance CMOS inverter. Designed for use in 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation.
The device is designed for low-voltage (3.3 V) VCC applications, but it could be used to interface to 5-V supply environment for inputs.
All inputs are equipped with protection circuits against static discharge.
•Low-voltage operation: VCC = 1.65 to 3.6 V
•High-speed operation: tpd = 5.2 ns (max) (VCC = 3.0 to 3.6 V)
•Output current: |IOH|/IOL = 24 mA (min) (VCC = 3.0 V)
•Latch-up performance: ±500 mA
•Available in JEDEC SOP, JEITA SOP, TSSOP and VSSOP (US)
•Power-down protection provided on all inputs and outputs
•Pin and function compatible with the 74 series (74AC/VHC/HC/F/ALS/LS etc.) 04 type
Note: xxxFN (JEDEC SOP) is not available in Japan.
TC74LCX04F
TC74LCX04FN
TC74LCX04FT
TC74LCX04FK
Weight |
|
SOP14-P-300-1.27A |
: 0.18 g (typ.) |
SOL14-P-150-1.27 |
: 0.12 g (typ.) |
TSSOP14-P-0044-0.65A |
: 0.06 g (typ.) |
VSSOP14-P-0030-0.50 |
: 0.02 g (typ.) |
Note: The Electrical Characteristics of VCC=1.8±0.15V is only applicable for products which manufactured from January 2009 onward.
1 |
2010-01-31 |
TC74LCX04F/FN/FT/FK
Pin Assignment (top view) |
IEC Logic Symbol |
1A |
1 |
14 |
VCC |
1Y |
2 |
13 |
6A |
2A |
3 |
12 |
6Y |
2Y |
4 |
11 |
5A |
3A |
5 |
10 |
5Y |
3Y |
6 |
9 |
4A |
GND |
7 |
8 |
4Y |
1A |
1 |
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2 |
1Y |
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1 |
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3 |
4 |
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2A |
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2Y |
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5 |
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6 |
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3A |
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3Y |
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9 |
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8 |
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4A |
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4Y |
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11 |
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10 |
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5A |
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5Y |
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13 |
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12 |
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6A |
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6Y |
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Inputs |
Outputs |
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A |
Y |
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L |
H |
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H |
L |
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Characteristics |
Symbol |
Rating |
Unit |
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Power supply voltage |
VCC |
−0.5 to 7.0 |
V |
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DC input voltage |
VIN |
−0.5 to 7.0 |
V |
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−0.5 to 7.0 (Note 2) |
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DC output voltage |
VOUT |
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V |
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−0.5 to VCC + 0.5 |
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(Note 3) |
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Input diode current |
IIK |
−50 |
|
mA |
Output diode current |
IOK |
±50 |
(Note 4) |
mA |
DC output current |
IOUT |
±50 |
|
mA |
Power dissipation |
PD |
180 |
|
mW |
DC VCC/ground current |
ICC/IGND |
±100 |
mA |
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Storage temperature |
Tstg |
−65 to 150 |
°C |
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: VCC = 0 V
Note 3: High or low state. IOUT absolute maximum rating must be observed.
Note 4: VOUT < GND, VOUT > VCC
2 |
2010-01-31 |
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TC74LCX04F/FN/FT/FK |
Operating Ranges (Note 1) |
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Characteristics |
Symbol |
Rating |
Unit |
Power supply voltage |
VCC |
1.65 to 3.6 |
V |
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1.5 to 3.6 (Note 2) |
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Input voltage |
VIN |
0 to 5.5 |
V |
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VOUT |
0 to 5.5 |
(Note 3) |
Output voltage |
0 to VCC |
V |
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(Note 4) |
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IOH/IOL |
±24 |
(Note 5) |
Output current |
±12 |
mA |
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(Note 6) |
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Operating temperature |
Topr |
−40 to 85 |
°C |
Input rise and fall time |
dt/dv |
0 to 10 |
(Note 7) ns/V |
Note 1: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND.
Note 2: Data retention only
Note 3: VCC = 0 V
Note 4: High or low state ( However, it can not exceed IOUT of absolute maximum ratings. ) Note 5: VCC = 3.0 to 3.6 V
Note 6: VCC = 2.7 to 3.0 V
Note 7: VIN = 0.8 to 2.0 V, VCC = 3.0 V
3 |
2010-01-31 |
TC74LCX04F/FN/FT/FK
DC Characteristics (Ta = −40 to 85°C)
Characteristics |
Symbol |
Test Condition |
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Min |
Max |
Unit |
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VCC (V) |
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1.65 to 2.3 |
VCC×0.9 |
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H-level |
VIH |
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2.3 to 2.7 |
1.7 |
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Input voltage |
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2.7 to 3.6 |
2.0 |
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V |
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1.65 to 2.3 |
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VCC×0.1 |
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L-level |
VIL |
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2.3 to 2.7 |
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0.7 |
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2.7 to 3.6 |
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0.8 |
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IOH = −100 μA |
1.65 to 3.6 |
VCC−0.2 |
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IOH = −4 mA |
1.65 |
1.05 |
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H-level |
VOH |
VIN = VIL |
IOH = −8 mA |
2.3 |
1.7 |
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IOH = −12 mA |
2.7 |
2.2 |
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IOH = −18 mA |
3.0 |
2.4 |
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Output voltage |
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IOH = −24 mA |
3.0 |
2.2 |
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V |
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IOL = 100 μA |
1.65 to 3.6 |
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0.2 |
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IOL = 4 mA |
1.65 |
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0.45 |
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L-level |
VOL |
VIN = VIH |
IOL = 8 mA |
2.3 |
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0.7 |
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IOL = 12 mA |
2.7 |
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0.4 |
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IOL = 16 mA |
3.0 |
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0.4 |
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IOL = 24 mA |
3.0 |
|
0.55 |
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Input leakage current |
IIN |
VIN = 0 to 5.5 V |
1.65 to 3.6 |
|
±5.0 |
μA |
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Power-off leakage current |
IOFF |
VIN/VOUT = 5.5 V |
0 |
|
10.0 |
μA |
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Quiescent supply current |
ICC |
VIN = VCC or GND |
1.65 to 3.6 |
|
10.0 |
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VIN = 3.6 to 5.5 V |
1.65 to 3.6 |
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±10.0 |
μA |
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Increase in Icc per input |
ICC |
VIH = VCC − 0.6 V |
2.7 to 3.6 |
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500 |
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4 |
2010-01-31 |