Sharp GL483Q, GL480Q, GL480 Datasheet

GL480/GL480Q/GL483Q

GL480/GL480Q

GL483Q

Infrared Emitting Diode

■ Features

1.Narrow beam angle (Δθ : TYP. ± 13˚ )

2.Radiant flux ( Φ e : MIN. 0.7mW at

I F = 20mA )

3.Compact, high reliability by chip coating

(GL480Q/GL483Q )

4.Long lead type (GL483Q )

■ Applications

1.Copiers

2.Floppy disk drives

3.Optoelectronic switches

■ Outline Dimensions

GL480/GL480Q						center
2- C0.5				1.5		Emitter	1.15
	MAX.
			3.0 ± 0.2				0.75
Rest of gate	0.3					4.0 ± 0.2
R0.8 ± 0.1				MAX.			60˚
			1.7
				0.8
				+ 1.5		- 1.0
				0.5	17.5
				MIN.
	0.2	± 0.2	2.54				2- 0.4
		2.15		1.6
	±
	2.95		2.8
					2
		1

(Unit : mm )

Pink transparent epoxy resin (GL480 ) Transparent

epoxy resin (GL480Q )

0.15 2

1

1Cathode

2Anode

■ Absolute Maximum Ratings		(Ta = 25˚C )
Parameter	Symbol	Rating	Unit
Power dissipation	P	75	mW
Forward current	IF	50	mA
*1Peak forward current	I FM	1	A
Reverse voltage	V R	6	V
Operating temperature	T opr	- 25 to + 85	˚C
Storage temperature	T stg	- 40 to + 85	˚C
*2Soldering temperature	T sol	260	˚C

*1 Pulse width<=100 μ s, Duty ratio = 0.01

*2 For 3 seconds at the position of 1.4mm from the bottom face of resin package.

GL483Q		center
	3.0 ± 0.2
2 - C0.5		Emitter
	1.5

Rest of	gate	MAX.			4.0 ± 0.2
		0.3
1.6	± 0.2		1.7	MAX.
					18.5
				0.8		1
		2-	0.6	MIN.	3.0	40.0 ±
				0.5

	0.2	2.54
	±
0.2
	2.15	1.6
±
2.95		2.8
	1	2

1.15

0.75

60˚

2 - 0.4

Transparent epoxy resin

2

0.15

1

1 Cathode

2 Anode

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.

GL480/GL480Q/GL483Q

■ Electro-optical Characteristics					( Ta = 25˚C)
Parameter	Symbol	Conditions	MIN.	TYP.	MAX.	Unit
Forward voltage	V F	IF = 20mA	-	1.2	1.4	V
Peak forward voltage	V FM	IFM = 0.5A	-	3.0	4.0	V
Reverse current	IR	V R = 3V	-	-	10	μ A
Terminal capacitance	Ct	V R = 0, f = 1MHz	-	50	-	pF
Response frequency	fc	-	-	300	-	kHz
Radiant flux	Φ e	IF = 20mA	0.7	-	3.0	mW
Peak emission wavelength	λ p	IF = 5mA	-	950	-	nm
Half intensity wavelength	λ	IF = 5mA	-	45	-	nm
Half intensity angle	θ	IF = 20mA	-	± 13	-	˚

Fig. 1 Forward Current vs.

Ambient Temperature

	60
	50
)	40
mA
(
F	30
I
current	20
Forward
	10
	0	0	25	50	75	85	100
	- 25
		Ambient temperature Ta ( ˚C )

Fig. 3 Spectral Distribution

	100
														IF = 5mA
														T a = 25˚C
)	80
%
(
radiantintensity	40
Relative	60
	20
	0
	880		900		920		940		960		980		1000		1020		1040
							Wavelength λ						( nm )

Fig. 2 Peak Forward Current vs. Duty Ratio

	10000		Pulse width <=100 μ s
	5000		Ta = 25˚C
)	2000
mA
	1000
(
FM
	500
I
current
	200
forward	100
	50
Peak
	20
	10	5 10 - 2 2	5 10 - 1 2
	10 - 3 2			5	1

Duty ratio

Fig. 4 Peak Emission Wavelength vs. Ambient Temperature

	1000
					IF = const.
)
nm	975
(
P
λ
emission wavelength	950
	925
Peak
	900	0	25	50	75	100
	- 25
		Ambient temperature T a			( ˚C )