ROHM DTA114GKA, DTA114GSA, DTA114GUA Schematic [ru]

DTA114GUA / DTA114GKA / DTA114GSA

Transistors

Digital transistors (built-in resistor)

DTA114GUA / DTA114GKA / DTA114GSA

!Features

1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.

2)Only the on / off conditions need to be set for operation, making device design easy.

3)Higher mounting densities can be achieved.

!Equivalent circuit

C

B

R

E

E : Emitter

C : Collector

B : Base

!Absolute maximum ratings (Ta=25°C)

	Parameter		Symbol	Limits	Unit
Collector-base voltage			VCBO	−50	V
Collector-emitter voltage			VCEO	−50	V
Emitter-base voltage			VEBO	−5	V
Collector current			IC	−100	mA
Collector Power		DTA114GUA / DTA114GKA	Pc	200	mW
dissipation		DTA114GSA		300
Junction temperature			Tj	150	°C
Storage temperature			Tstg	−55 to +150	°C

!Package, marking, and packaging specifications

Type	DTA114GUA	DTA114GKA	DTA114GSA
Package	UMT3	SMT3	SPT
Marking	K14	K14	−
Packaging code	T106	T146	TP
Basic ordering unit (pieces)	3000	3000	5000

!External dimensions (Unit: mm)

DTA114GUA			(2) (1)	0.65 0.65
0.3		(3)			1.3	2.0
		1.25
			2.1
0.15			0.2
		0~0.1		0.7	0.9
	0.1Min.		Each lead has same dimensions

ROHM : UMT3	(1)	Emitter
EIAJ : SC-70	(2)	Base
	(3)	Collector

DTA114GKA		(1)
0.4	(3)	(2)	0.95 0.95	1.9	2.9
		1.6
		2.8

0.15								1.1
					0.8
0.3Min.
0~0.1			Each lead has same dimensions
ROHM : SMT3			(1)	Emitter
EIAJ : SC-59			(2)	Base
			(3)	Collector

DTA114GSA					4								2
3
)										3Min.
15Min.					0.45
(
									2.5				0.5			0.45
					5										Taping specifications
(1) (2) (3)
ROHM : SPT													(1)			Emitter
EIAJ : SC-72													(2)			Collector
													(3)			Base

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DTA114GUA / DTA114GKA / DTA114GSA

Transistors

!Electrical characteristics (Ta=25°C)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	−50	−	−	V	IC= −50µA
Collector-emitter breakdown voltage	BVCEO	−50	−	−	V	IC= −1mA
Emitter-base breakdown voltage	BVEBO	−5	−	−	V	IE= −720µA
Collector cutoff current	ICBO	−	−	−0.5	µA	VCB= −50V
Emitter cutoff current	IEBO	−300	−	−580	µA	VEB= −4V
Collector-emitter saturation voltage	VCE(sat)	−	−	−0.3	V	IC= −10mA, IB= −0.5mA
DC current transfer ratio	hFE	30	−	−	−	IC= −5mA, VCE= −5V
Emitter-base resistance	R1	7	10	13	kΩ	−
Transition frequency	fT	−	250	−	MHz	VCE= −10V, IE=50mA, f=100MHz

Transition frequency of the device.

!Electrical characteristics curves

		Ta=25˚C
hFE	500	VO=5V
	200
:
GAIN	100
CURRENTDC	10
	50
	20
	5
	2

0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA)

Fig.1 DC Current gain

vs. Collector Current

(sat)(mV)	1000
CE	500	Ta=25˚C
V
VOLTAGE:	200
	100			IC / IB=20 / 1
SATURATION
	50		IC / IB=10 / 1
COLLECTOR	20
	10
	1	2		5					10			20			50		100

COLLECTOR CURRENT : VDS (V)

Fig.2 Collector-emitter saturation voltage vs. Collector Current

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