ROHM 2SD2707, 2SD2654, 2SD2351, 2SD2226K, 2SD2227S Technical data

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S

Transistors

General Purpose Transistor (50V, 0.15A)

2SD2707/2SD2654/2SD2351/2SD2226K/2SD2227S

zFeatures

1)High DC current gain.

2)High emitter-base voltage. (VCBO=12V)

3)Low saturation voltage.

(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

zAbsolute maximum ratings (Ta=25°C)

	Parameter		Symbol	Limits	Unit
	Collector-base voltage		VCBO	60	V
	Collector-emitter voltage		VCEO	50	V
	Emitter-base voltage		VEBO	12	V
	Collector current		IC	0.15	A (DC)
				0.2	A (Pulse)
	Collector power	2SD2654, 2SD2707		0.15
		2SD2351, 2SD2226K	PC	0.2	W
	dissipation
		2SD2227S		0.3
	Junction temperature		Tj	150	°C
	Storage temperature		Tstg	−55 to +150	°C

Single pulse Pw=100ms

zPackaging specifications and hFE

Type	2SD2707	2SD2654	2SD2351	2SD2226K	2SD2227S
package	VMT3	EMT3	UMT3	SMT3	SPT
hFE	VW	VW	VW	VW	VW
Marking	BJ	BJ	BJ	BJ	−
Code	T2L	TL	T106	T146	TP
Basic ordering unit (pleces)	8000	3000	3000	3000	5000
Denotes hFE

zExternal dimensions (Unit : mm)

2SD2707

		1.2
	0.2	0.8	0.2
1.2	0.32	(3)	0.40.4	0.8
			(2)
			(1)
	0.5		0.22
ROHM : EMT3	0.13

2SD2654

ROHM : EMT3 EIAJ : SC-75A

		0.2
		(1)	0.50.5
0.3	(3)	(2)		1.0	1.6
	0.8	0.2
0.15	1.6
	0~0.1	0.55	0.7
0.1Min.

2SD2351

0.3	(3)	(2) (1)	0.65 0.65	1.3	2.0
		1.25
		2.1
0.15		0.2
			0.7	0.9

ROHM : UMT3

0.1Min.

0~0.1

EIAJ : SC-70

Each lead has same dimensions

2SD2226K		(1)
0.4	(3)	(2)	0.95 0.95	1.9	2.9
		1.6
		2.8

ROHM : SMT3	0.15															0.8			1.1
		0.3Min.							0~0.1
EIAJ : SC-59
	Each lead has same dimensions
2SD2227S						4										2
	3
	)									3Min.
	15Min.					0.45
	(
									2.5					0.5		0.45
ROHM : SPT						5
EIAJ : SC-72			(1) (2) (3)
				Taping specifications

(1)Base

(2)Emitter

(3)Collector

(1)Emitter

(2)Base

(3)Collector

(1)Emitter

(2)Base

(3)Collector

(1)Emitter

(2)Base

(3)Collector

(1)Emitter

(2)Collector

(3)Base

Rev.A 1/3

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	60	−	−	V	IC=10µA
Collector-emitter breakdown voltage	BVCEO	50	−	−	V	IC=1mA
Emitter-base breakdown voltage	BVEBO	12	−	−	V	IE=10µA
Collector cutoff current	ICBO	−	−	0.3	µA	VCB=50V
Emitter cutoff current	IEBO	−	−	0.3	µA	VEB=12V
Collector-emitter saturation voltage	VCE(sat)	−	−	0.3	V	IC/IB=50mA/5mA
DC current transfer ratio	hFE	820	−	2700	−	VCE/IC=5V/1mA
Transition frequency	fT	−	250	−	MHz	VCE=5V, IE=−10mA, f=100MHz
Output capacitance	Cob	−	3.5	−	pF	VCB=5V, IE=0A, f=1MHz

Measured using pulse current.

zElectrical characteristics curves

	2.0	Ta=25°C							200					A			200	VCE=5V
					1.2 A									250			100
(mA)								(mA)		500 A				A		(mA)
														200
	1.6		2.0 A						160	450 A				A			50
: IC					1.0 A			: IC		400 A						: IC
			1.8 A							350 A				150
CURRENT			1.6 A					CURRENT		300 A						CURRENT	20		C	C	C
			1.4 A		0.8 A
	1.2								120					100 A					°
																				°
																					°
																	10			25	25
					0.6 A												5				−
COLLECTOR	0.8							COLLECTOR	80					50 A		COLLECTOR
																	2
					0.4 A
	0.4								40								1
					0.2 A
										Ta=25°C							0.5
										Measured
					IB=0					using pulse current				IB=0			0.2
	0	0	0.1	0.2	0.3	0.4	0.5		0 0		4	8	12	16	20			0.2	0.4	0.6		0.8	1.0	1.2	1.4
																	0
	COLLECTOR TO EMITTER VOLTAGE : VCE (V)								COLLECTOR TO EMITTER VOLTAGE : VCE (V)									BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter output	Fig.2 Grounded emitter output	Fig.3 Grounded emitter propagation
characteristics ( Ι )	characteristics ( ΙΙ )	characteristics

10000																Ta=25°C
	5000															Measured
hFE	2000															using pulse current
:																					VCE=10V
	1000
GAIN	500
CURRENTDC
	50																										5V
	200
	100																									3V
	20
	10
	0.2		0.5				1		2		5			10			20		50 100							200

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( Ι )

10000						VCE=5V				(mV)	1000							Ta=25°C
	5000		Ta=100°C			Measured					500
hFE						using pulse current				V: CE(sat)
	2000		25°C								200
GAINCURRENTDC:										VOLTAGESATURATIONCOLLECTOR
	1000										100
	500			−25°C							50		IC / IB=50
														20
	200										20			10
	100										10
	50										5
	20										2
	10	0.5	1	2	5	10	20	50 100	200		1	0.5	1	2	5	10	20	50	100	200
	0.2										0.2
		COLLECTOR CURRENT : IC (mA)										COLLECTOR CURRENT : IC (mA)

Fig.5 DC current gain vs.	Fig.6 Collector-emitter saturation voltage
collector current ( ΙΙ )	vs. collector current ( Ι )

Rev.A 2/3