ROHM DTA114EB, DTA114EE, DTA114EKA, DTA114EM, DTA114EUA Schematic [ru]

100mA / 50V Digital transistors (with built-in resistors)

DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA

zApplications

Inverter, Interface, Driver

zFeatures

1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.

3)Only the on/off conditions need to be set for operation, making the device design easy.

zStructure

PNP epitaxial planar silicon transistor (Resistor built-in type)

zDimensions (Unit : mm)

DTA114EB

ROHM : VMN3

	0.1	0.22	0.16
			(3)
1.0	0.8
	0.1	(1)	(2)

								0.37	(1) IN
		0.17
			0.35						(2) GND
0.6
									(3) OUT
							Each lead has same dimensions

Abbreviated symbol : 14

DTA114EM

ROHM : VMT3

DTA114EUA

ROHM : UMT3 EIAJ : SC-70

	1.2					DTA114EE	1.6		0.7
								0.3	0.55
	0.32	0.2
	(3)						(3)
	(1)(2)	0.8	1.2					0.8	1.6
0.22		0.2					(2)	(1)
				0.13						0.1Min.	(1) GND
	0.8		0.5		(1) IN		0.5	0.5
	0.4 0.4						0.2	0.2
					(2) GND				0.15		(2) IN
					(3) OUT						(3) OUT

Each lead has same dimensions			1.0	Each lead has same dimensions
Abbreviated symbol : 14	ROHM : EMT3	Abbreviated symbol : 14

2.0		0.9	DTA114EKA	2.9	1.1
0.3	0.2	0.7		0.4	0.8
(3)				(3)

1.25											2.1															1.6				2.8
		(2)						(1)
		1.3										0.15						0.1Min.	(3) OUT					(2)			(1)											0.3Min.
																			(1) GND																				(1) GND
0.65 0.65																			(2) IN				0.95		0.95
																														0.15									(2) IN
																				ROHM : SMT3			1.9																(3) OUT
											Each lead has same dimensions																			Each lead has same dimensions
		Abbreviated symbol : 14																		EIAJ : SC-59				Abbreviated symbol : 14

www.rohm.com	1/3	2009.03 - Rev.C
c
○ 2009 ROHM Co., Ltd. All rights reserved.

DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA

Data Sheet

zPackaging specifications

zEquivalent circuit

Package

VMN3

VMT3

EMT3

UMT3

SMT3

Packaging type

Taping

Taping

Taping

Taping

Taping

OUT

R1

Code

T2L

T2L

TL

T106

T146

IN

Basic ordering

8000

8000

3000

3000

3000

R2

Type

unit (pieces)

GND(+)

DTA114EB

−

−

−

−

DTA114EM

−

−

−

−

IN

OUT

DTA114EE

−

−

−

−

GND(+)

DTA114EUA

−

−

−

−

DTA114EKA

−

−

−

−

R1=R2=10kΩ

zAbsolute maximum ratings (Ta=25°C)

	Parameter	Symbol			Limits				Unit
			DTA114EB	DTA114EM	DTA114EE		DTA114EUA	DTA114EKA
	Supply voltage	VCC			−50				V
	Input voltage	VIN			−40 to +10				V
	Output current	IO			−50				mA
		IC(Max.)			−100
	Power dissipation	Pd		150		200			mW
	Junction temperature	Tj			150				°C
	Storage temperature	Tstg			−55 to +150				°C

zElectrical characteristics (Ta=25°C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
	Input voltage	VI(off)	−	−	−0.5	V	VCC=−5V, IO=−100µA
		VI(on)	−3	−	−		VO=−0.3V, IO=−10mA
	Output voltage	VO(on)	−	−	−0.3	V	IO/II=−10mA/−0.5mA
	Input current	II	−	−	−0.88	mA	VI=−5V
	Output current	IO(off)	−	−	−0.5	µA	VCC=−50V, VI=0V
	DC current gain	GI	30	−	−	−	VO=−5V, IO=−5mA
	Input resistance	R1	7	10	13	kΩ	−
	Resistance ratio	R2/R1	0.8	1	1.2	−	−
	Transition frequency	fT	−	250	−	MHz	VCE=−10V, IE=5mA, f=100MHz

Characteristics of built-in transistor

www.rohm.com	2/3	2009.03 - Rev.C
c
○ 2009 ROHM Co., Ltd. All rights reserved.