ROHM BR9040F, BR9040, BR9020F, BR9020, BR9010FV Datasheet

Memory ICs

1, 2, and 4k bit EEPROMs for direct connection to serial ports

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Features

•BR9010 / F / FV (1k bit): 64 words × 16 bits BR9020 / F (2k bit): 128 words × 16 bits BR9040 / F (4k bit): 256 words × 16 bits •Single power supply operation

•Serial data input and output •Automatic erase-before-write •Low current consumption –1.5mA (max.) active current: 3V –2µA (max.) standby current: 3V •Noise filter built into SK pin

•Compact DIP8, SOP8, SSOP-B8 packages (SSOPB8 is available only with BR9010).

•100,000 ERASE / WRITE cycles •10 years Data Retention

•Easily connects to serial port

•Pin assignments

					VCC R /
CS		1		8						B				1		8		WC
					R /										BR9010F /
SK		2	BR9010 /	7			B		VCC					2		7	GND
															BR9010FV /
			BR9020 / 9040
DI		3		6	WC				CS					3	BR9020F /	6	DO
															BR9040F
DO		4		5	GND				SK					4		5	DI

This pin is N.C. (non connection) on BR9010.

•Pin description

Pin										Function
name
								Chip select input
			CS
	SK							Serial data clock input
			DI					Operating code, address, and serial data input
	DO							Serial data output
GND								Reference voltage for all I / O, 0V
								Write control input
	WC
R /								READY,	BUSY	status signal output
				B
	VCC							Power supply connection

•Overview

The BR90 series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs through CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.

1

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Block diagram
BR9010 / F / FV
CS	Command decode		Power supply
	Control		voltage detector
SK	Clock generation	Write	High voltage
		disable	generator	WC

DI	Command
	register	Address		Address
			6bit
		buffer		decoder	6bit	1024bit
						EEPROM
		Data	16bit	R / W		array
DO		register		amplifier	16bit

BR9020 / F, BR9040 / F
			R / B
CS	Command decode	Power supply
	Control	voltage detector
SK	Clock generation	High voltage
	Write
	disable	generator	WC

DI

Command

register

Address

7 (8)

Address

2,048

buffer

decoder

7

(8)

bit

(4,096) bit

bit

EEPROM

Data

16bit

R / W

array

DO

register

amplifier

16bit

Values in parentheses are for the BR9040 / F.

2

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Absolute maximum ratings (Ta = 25°C)

Parameter	Symbol	Limits				Unit
Applied voltage	VCC	– 0.3 ~ +			7.0	V
		DIP8			500 1
Power dissipation	Pd	SOP8			350 2	mW
		SSOP-B8			300 3
Storage temperature	Tstg	– 65 ~ +			125	°C
Operation temperature	Topr	– 40	~ +		85	°C
Input voltage	—	– 0.3	~ VCC + 0.3			V

Reduced by 5.0mw 1 / 3.5mw 2 / 3.0mw 3 for each increase in Ta of 1°C over 25°C.

•Recommended operating conditions

	Parameter	Symbol	Limits	Unit
	Power supply voltage	VCC	2.7 to 5.5 (write)	V
			2.0 to 5.5 (read)	V
	Input voltage	VIN	0 ~ VCC	V

3

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Electrical characteristics

BR9010 / F / FV: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 ×

V

DI Pin

VCC

Input high level voltage 1

VIH1

0.7 ×

—

—

V

DI Pin

VCC

Input low level voltage 2

VIL2

—

—

0.2 ×

V

CS, SK, WC Pin

VCC

Input high level voltage 2

VIH2

0.8 ×

—

—

V

CS, SK, WC Pin

VCC

Output low level voltage

VOL

0

—

0.4

V

IOL = 2.1mA

Output high level voltage

VOH

VCC –

—

VCC

V

IOH = – 0.4mA

0.4

Input leak current

ILI

– 1

—

1

µA

VIN = 0V ~ VCC

—

µA

Output leak current

ILO

– 1

1

VOUT = 0V ~ VCC CS = VCC

Consumption current

ICC1

—

—

2

mA

f = 1MHz tE / W = 10ms (WRITE)

during operation

ICC2

—

—

1

mA

f = 1MHz (READ)

Standby current

—

—

3

µA

ISB

CS, SK, DI, WC, = VCC DO = OPEN

—

—

SK frequency

fSK

1

MHz

—

BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 ×

V

DI Pin

VCC

Input high level voltage 1

VIH1

0.7 ×

—

—

V

DI Pin

VCC

0.2 ×

Input low level voltage 2

VIL2

—

—

V

CS, SK, WC Pin

VCC

0.8 ×

Input high level voltage 2

VIH2

—

—

V

CS, SK, WC Pin

VCC

Output low level voltage

VOL

0

—

0.4

V

IOL = 100µA

Output high level voltage

VOH

VCC –

—

VCC

V

IOH = – 100µA

0.4

Input leak current

ILI

–1

—

1

µA

VIN = 0 ~ VCC

—

µA

Output leak current

ILO

–1

1

VOUT = 0 ~ VCC CS = VCC

Consumption current

ICC1

—

—

1.5

mA

f = 1MHz tE / W = 15ms (WRITE)

during operation

ICC2

—

—

500

µA

f = 1MHz (READ)

Standby current

—

—

2

µA

ISB

CS, SK, DI, WC, = VCC DO = OPEN

—

—

—

SK frequency

fSK

1

MHz

s Not designed for radiation resistance

4

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Electrical characteristics

•BR9020 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 × VCC

V

DI Pin

Input high level voltage 1

VIH1

0.7 × VCC

—

—

V

DI Pin

0.2 × VCC

Input low level voltage 2

VIL2

—

—

V

CS, SK, WC Pin

0.8 × VCC

Input high level voltage 2

VIH2

—

—

V

CS, SK, WC Pin

Output low level voltage

VOL

0

—

0.4

V

IOL = 2.1mA

Output high level voltage

VOH

VCC – 0.4

—

VCC

V

IOH = – 0.4mA

Input leak current

ILI

– 1

—

1

µA

VIN = 0V ~ VCC

Output leak current

—

1

µA

ILO

– 1

VOUT = 0V ~ VCC CS = VCC

Consumption current

ICC1

—

—

2

mA

f

= 1MHz tE / W = 10ms (WRITE)

SK

during operation

—

—

1

mA

ICC2

fSK = 1MHz (READ)

Standby current

—

—

3

µA

ISB

CS, SK, DI, WC, = VCC DO, R / B = OPEN

frequency

SK

fSK

—

—

1

MHz

—

•BR9020 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 × VCC

V

DI Pin

Input high level voltage 1

VIH1

0.7 × VCC

—

—

V

DI Pin

0.2 × VCC

Input low level voltage 2

VIL2

—

—

V

CS, SK, WC Pin

0.8 × VCC

Input high level voltage 2

VIH2

—

—

V

CS, SK, WC Pin

Output low level voltage

VOL

0

—

0.4

V

IOL = 100µA

Output high level voltage

VOH

VCC – 0.4

—

VCC

V

IOH = – 100µA

Input leak current

ILI

– 1

—

1

µA

VIN = 0V ~ VCC

Output leak current

– 1

—

µA

ILO

1

VOUT = 0V ~ VCC CS = VCC

Consumption current

ICC1

—

—

1.5

mA

f

= 1MHz tE / W = 15ms (WRITE)

SK

during operation

—

—

500

µA

ICC2

fSK = 1MHz (READ)

Standby current

—

—

2

µA

SB

CS, SK, DI, WC, = V

CC

DO, R / B = OPEN

I

frequency

SK

fSK

—

—

1

MHz

—

5

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F

•Electrical characteristics

•BR9040 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 × VCC

V

DI Pin

Input high level voltage 1

VIH1

0.7 × VCC

—

—

V

DI Pin

0.2 × VCC

Input low level voltage 2

VIL2

—

—

V

CS, SK, WC Pin

0.8 × VCC

Input high level voltage 2

VIH2

—

—

V

CS, SK, WC Pin

Output low level voltage

VOL

0

—

0.4

V

IOL = 2.1mA

Output high level voltage

VOH

VCC – 0.4

—

VCC

V

IOH = – 0.4mA

Input leak current

ILI

– 1

—

1

µA

VIN = 0V ~ VCC

Output leak current

– 1

—

1

µA

ILO

VOUT = 0V ~ VCC CS = VCC

Consumption current

ICC1

—

—

2

mA

f

= 1MHz tE / W = 10ms (WRITE)

SK

during operation

—

—

1

mA

ICC2

fSK = 1MHz (READ)

Standby current

—

—

3

µA

ISB

CS, SK, DI, WC, = VCC DO, R / B = OPEN

frequency

SK

fSK

—

—

1

MHz

—

•BR9040 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input low level voltage 1

VIL1

—

—

0.3 × VCC

V

DI Pin

Input high level voltage 1

VIH1

0.7 × VCC

—

—

V

DI Pin

0.2 × VCC

Input low level voltage 2

VIL2

—

—

V

CS, SK, WC Pin

0.8 × VCC

Input high level voltage 2

VIH2

—

—

V

CS, SK, WC Pin

Output low level voltage

VOL

0

—

0.4

V

IOL = 100µA

Output high level voltage

VOH

VCC – 0.4

—

VCC

V

IOH = – 100µA

Input leak current

ILI

– 1

—

1

µA

VIN = 0V ~ VCC

Output leak current

—

µA

ILO

– 1

1

VOUT = 0V ~ VCC CS = VCC

Consumption current

ICC1

—

—

1.5

mA

f

= 1MHz tE / W = 15ms (WRITE)

SK

during operation

—

—

500

µA

ICC2

fSK = 1MHz (READ)

Standby current

—

—

2

µA

ISB

CS, SK, DI, WC, = VCC DO, R / B = OPEN

—

—

1

MHz

VCC = 3.0 ~ 3.3V

SK frequency

fSK

—

—

750

kHz

VCC = 2.7 ~ 3.0V

6