DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification |
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1996 May 30 |
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Supersedes data of February 1994 |
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Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack.
DESCRIPTION |
This package is hermetically sealed |
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Rugged glass SOD57 package, using |
and fatigue free as coefficients of |
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expansion of all used parts are |
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a high temperature alloyed |
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matched. |
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construction. |
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k |
a |
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYV26A |
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− |
200 |
V |
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BYV26B |
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− |
400 |
V |
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BYV26C |
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− |
600 |
V |
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BYV26D |
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− |
800 |
V |
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BYV26E |
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− |
1000 |
V |
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BYV26F |
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− |
1200 |
V |
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BYV26G |
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− |
1400 |
V |
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VR |
continuous reverse voltage |
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BYV26A |
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− |
200 |
V |
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BYV26B |
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− |
400 |
V |
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BYV26C |
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− |
600 |
V |
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BYV26D |
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− |
800 |
V |
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BYV26E |
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− |
1000 |
V |
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BYV26F |
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− |
1200 |
V |
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BYV26G |
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− |
1400 |
V |
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IF(AV) |
average forward current |
Ttp = 85 °C; lead length = 10 mm; |
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BYV26A to E |
see Figs 2 and 3; |
− |
1.00 |
A |
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BYV26F and G |
averaged over any 20 ms period; |
− |
1.05 |
A |
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see also Figs 10 and 11 |
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IF(AV) |
average forward current |
Tamb = 60 °C; PCB mounting (see |
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BYV26A to E |
Fig.19); see Figs 4 and 5; |
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0.65 |
A |
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BYV26F and G |
averaged over any 20 ms period; |
− |
0.68 |
A |
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see also Figs 10 and 11 |
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IFRM |
repetitive peak forward current |
Ttp = 85 °C; see Figs 6 and 7 |
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BYV26A to E |
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− |
10.0 |
A |
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BYV26F and G |
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− |
9.6 |
A |
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1996 May 30 |
2 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IFRM |
repetitive peak forward current |
Tamb = 60 °C; see Figs 8 and 9 |
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BYV26A to E |
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− |
6.0 |
A |
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BYV26F and G |
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− |
6.4 |
A |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; Tj = Tj max |
− |
30 |
A |
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prior to surge; VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
IR = 400 mA; Tj = Tj max prior to |
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10 |
mJ |
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avalanche energy |
surge; inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
see Figs 12 and 13 |
−65 |
+175 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 1 A; Tj = Tj max; |
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BYV26A to E |
see Figs 14 and 15 |
− |
− |
1.3 |
V |
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BYV26F and G |
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− |
− |
1.3 |
V |
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VF |
forward voltage |
IF = 1 A; |
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BYV26A to E |
see Figs 14 and 15 |
− |
− |
2.50 |
V |
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BYV26F and G |
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− |
− |
2.15 |
V |
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V(BR)R |
reverse avalanche breakdown |
IR = 0.1 mA |
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voltage |
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BYV26A |
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300 |
− |
− |
V |
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BYV26B |
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500 |
− |
− |
V |
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BYV26C |
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700 |
− |
− |
V |
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BYV26D |
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900 |
− |
− |
V |
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BYV26E |
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1100 |
− |
− |
V |
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BYV26F |
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1300 |
− |
− |
V |
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BYV26G |
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1500 |
− |
− |
V |
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IR |
reverse current |
VR = VRRMmax; see Fig.16 |
− |
− |
5 |
μA |
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VR = VRRMmax; |
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− |
150 |
μA |
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Tj = 165 °C; see Fig.16 |
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trr |
reverse recovery time |
when switched from |
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BYV26A to C |
IF = 0.5 A to IR = 1 A; |
− |
− |
30 |
ns |
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BYV26D and E |
measured at IR = 0.25 A; |
− |
− |
75 |
ns |
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see Fig.20 |
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BYV26F and G |
− |
− |
150 |
ns |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; |
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BYV26A to C |
see Figs 17 and 18 |
− |
45 |
− |
pF |
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BYV26D and E |
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− |
40 |
− |
pF |
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BYV26F and G |
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− |
35 |
− |
pF |
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1996 May 30 |
3 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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dIR |
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maximum slope of reverse recovery |
when switched from |
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-------- |
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current |
IF = 1 A to VR ³ 30 V and |
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dt |
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dIF/dt = -1 A/ms; |
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- |
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A/ms |
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BYV26A to C |
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7 |
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see Fig.21 |
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BYV26D and E |
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- |
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6 |
A/ms |
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BYV26F and G |
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- |
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5 |
A/ms |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
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46 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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100 |
K/W |
Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.19. For more information please refer to the “General Part of associated Handbook”.
1996 May 30 |
4 |