Philips BYQ30E-150, BYQ30ED-200, BYQ30EB-200, BYQ30EB-150 Datasheet

Philips Semiconductors Product specification

Rectifier diodes

BYQ30E, BYQ30EB, BYQ30ED series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

VR = 150 V/ 200 V

• Fast switching

VF ≤ 0.95 V

• Soft recovery characteristic

a1

a2

• Reverse surge capability

1

3

• High thermal cycling performance

IO(AV) = 16 A

• Low thermal resistance

IRRM = 0.2 A

k

2

trr ≤ 25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.

The BYQ30E series is supplied in the SOT78 conventional leaded package.

The BYQ30EB series is supplied in the SOT404 surface mounting package.

The BYQ30ED series is supplied in the SOT428 surface mounting package.

PINNING

SOT78 (TO220AB) SOT404

SOT428

PIN DESCRIPTION

tab

1anode 1

2cathode 1

3anode 2

tab cathode	1 2 3

	tab		tab
	2		2
1	3	1	3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
		BYQ30E/ BYQ30EB/ BYQ30ED		-150		-200
VRRM	Peak repetitive reverse		-	150		200	V
	voltage
VRWM	Working peak reverse		-	150		200	V
	voltage
VR	Continuous reverse voltage		-	150		200	V
IO(AV)	Average rectified output	square wave; δ = 0.5; Tmb ≤ 104 ˚C	-		16		A
	current (both diodes
	conducting)	square wave; δ = 0.5; Tmb ≤ 104 ˚C
IFRM	Repetitive peak forward		-		16		A
	current per diode
IFSM	Non-repetitive peak forward	t = 10 ms	-		80		A
	current per diode	t = 8.3 ms	-		88		A
		sinusoidal; with reapplied VRRM(max)
IRRM	Peak repetitive reverse	tp = 2 μs; δ = 0.001	-		0.2		A
	surge current per diode	tp = 100 μs
IRSM	Peak non-repetitive reverse		-		0.2		A
	surge current per diode
Tj	Operating junction		-		150		˚C
	temperature
Tstg	Storage temperature		- 40		150		˚C

1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.

October 1998

1

Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes		BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VC	Electrostatic discharge	Human body model;	-	8	kV
	capacitor voltage	C = 250 pF; R = 1.5 kW

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction	per diode	-	-	3	K/W
	to mounting base	both diodes	-	-	2.5	K/W
Rth j-a	Thermal resistance junction	SOT78 package, in free air	-	60	-	K/W
	to ambient	SOT404 and SOT428 packages, pcb	-	50	-	K/W
		mounted, minimum footprint, FR4 board

ELECTRICAL CHARACTERISTICS

All characteristics are per diode at Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS			MIN.	TYP.	MAX.	UNIT
VF	Forward voltage	IF = 8	A; Tj = 150˚C		-	0.84	0.95	V
		IF = 16 A; Tj = 150˚C			-	1	1.15	V
		IF = 16 A			-	1.12	1.25	V
IR	Reverse current	VR = VRWM			-	4	30	mA
		VR = VRWM; Tj = 100˚C			-	0.3	0.6	mA
Qrr	Reverse recovered charge	IF = 2	A; VR	³ 30 V; -dIF/dt = 20 A/ms	-	4	11	nC
trr1	Reverse recovery time	IF = 1	A; VR	³ 30 V; -dIF/dt = 100 A/ms		20	25	ns
trr2	Reverse recovery time	IF = 0.5 A to IR = 1 A; Irec = 0.25 A			-	12	22	ns
Vfr	Forward recovery voltage	IF = 1	A; dIF/dt = 10 A/ms		-	1	-	V

October 1998

2

Rev 1.200

Philips Semiconductors	Product specification
Rectifier diodes	BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged

I	dI
	F
F	dt
	t
	rr
		time
	Q s	10%	100%
I	I
R
	rrm
	Fig.1. Definition of trr1, Qs and Irrm
I F
		time
V F
			V fr
		V F
		time
	Fig.2. Definition of Vfr

12	Forward dissipation, PF (W) BYQ30					Tmb(max) / C		114
	Vo = 0.75 V					D = 1.0
10	Rs = 0.025 Ohms							120
					0.5
8				0.2				126
6			0.1					132
4				I	tp	D =	tp	138
							T
2					T		t	144
0	0	2	4	6	8	10		150
							12
			Average forward current, IF(AV) (A)

Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where

IF(AV) =IF(RMS) x ÖD.

R

D.U.T.

Voltage Pulse Source

Current

shunt

to 'scope

Fig.4. Circuit schematic for trr2

0.5A
IF
0A
I	rec	= 0.25A
IR
		trr2
		I = 1A
		R
		Fig.5. Definition of trr2

12	Forward dissipation, PF (W)				BYQ30			Tmb(max) / C
		Vo = 0.75 V							114
10		Rs 0.025 Ohms							120
								a = 1.57
8								1.9	126
							2.2
6					2.8				132
				4
4									138
2									144
0	0	1	2	3	4	5	6	7	150
									8

Average forward current, IF(AV) (A)

Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).

October 1998

3

Rev 1.200