PANJIT BZT52-C5V1, BZT52-C4V7, BZT52-C4V3, BZT52-C3V3, BZT52-C39 Datasheet

BZT52-C2V4 thru BZT52-C39

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE	2.4 to 39 Volts	POWER	410 mWatts

FEATURES

•Planar Die construction

•410mW Power Dissipation

•Zener Voltages from 2.4V - 39V

•Ideally Suited for Automated Assembly Processes

MECHANICAL DATA

•Case: SOD-123, Molded Plastic

•Terminals: Solderable per MIL-STD-202, Method 208

• Polarity: See Diagram Below	SOD-123

•Approx. Weight: 0.008 grams

•Mounting Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

	Parameter		Symbol	Value	Units
	Power Dissipation (Notes A) at 25OC		PD	410	mW
	Peak Forward Surge Current, 8.3ms single half		IFSM	2.0	Amps
	sine-wave superimposed on rated load (JEDEC method)	(Notes B)
	Operating Junction and StorageTemperature Range		TJ	-55 to +150	OC

NOTES:

A.Mounted on 5.0mm2(.013mm thick) land areas.

B.Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

Part Number: BZT52-C2V4 - BZT52-C39

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BZT52-C2 thru BZT52-C39

ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100mA for all types.

	Nominal Zener Voltage				Dynamic Resistance Impedance				Max Reverse		Max. Zener
	@		Iz =5mA						Leakage Current		Current
Part Number												Package
		VZ @ IZT			ZZT @ IZT		ZZK @ IZK		IR @ VR		IZM@TA
	Nom. V		Mi n. V	Max. V	Ω	mA	Ω	mA	nA	V	mA
BZT52-C2V4	2.4		2.28	2.56	85	5	600	1	100000	1	-	SOD-123
BZT52-C2V7	2.7		2.5	2.9	83	5	500	1	75000	1	134	SOD-123
BZT52-C3	3		2.8	3.2	95	5	500	1	50000	1	118	SOD-123
BZT52-C3V3	3.3		3.1	3.5	95	5	500	1	25000	1	109	SOD-123
BZT52-C3V6	3.6		3.4	3.8	95	5	500	1	15000	1	100	SOD-123
BZT52-C3V9	3.9		3.7	4.1	95	5	500	1	10000	1	92	SOD-123
BZT52-C4V3	4.3		4	4.6	95	5	500	1	5000	1	84	SOD-123
BZT52-C4V7	4.7		4.4	5	78	5	500	1	5000	1	76	SOD-123
BZT52-C5V1	5.1		4.8	5.4	60	5	480	1	100	0.8	67	SOD-123
BZT52-C5V6	5.6		5.2	6	40	5	400	1	100	1	59	SOD-123
BZT52-C6V2	6.2		5.8	6.6	10	5	200	1	100	2	54	SOD-123
BZT52-C6V8	6.8		6.4	7.2	8	5	150	1	100	3	49	SOD-123
BZT52-C7V5	7.5		7	7.9	7	5	50	1	100	5	44	SOD-123
BZT52-C8V2	8.2		7.7	8.7	7	5	50	1	100	6	40	SOD-123
BZT52-C9V1	9.1		8.5	9.6	10	5	50	1	100	7	36	SOD-123
BZT52-C10	10		9.4	10.6	15	5	70	1	100	7.5	33	SOD-123
BZT52-C11	11		10.4	11.6	20	5	70	1	100	8.5	30	SOD-123
BZT52-C12	12		11.4	12.7	20	5	90	1	100	9	28	SOD-123
BZT52-C13	13		12.4	14.1	25	5	110	1	100	10	25	SOD-123
BZT52-C15	15		13.8	15.6	30	5	110	1	100	11	23	SOD-123
BZT52-C16	16		15.3	17.1	40	5	170	1	100	12	20	SOD-123
BZT52-C18	18		16.8	19.1	50	5	170	1	100	14	18	SOD-123
BZT52-C20	20		18.8	21.2	50	5	220	1	100	15	17	SOD-123
BZT52-C22	22		20.8	23.3	55	5	220	1	100	17	16	SOD-123
BZT52-C24	24		22.8	25.6	80	5	220	1	100	18	13	SOD-123
BZT52-C27	27		25.1	28.9	80	5	250	1	100	20	12	SOD-123
BZT52-C30	30		28	32	80	5	250	1	100	22.5	10	SOD-123
BZT52-C33	33		31	35	80	5	250	1	100	25	9	SOD-123
BZT52-C36	36		34	38	90	5	250	1	100	27	9	SOD-123
BZT52-C39	39		37	41	90	5	300	1	100	29	8	SOD-123

NOTE:

1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.

2.Specials Available Include:

A.Nominal zener voltages between the voltages shown and tighter voltage tolerances.

B.Matched sets.

3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.

4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.

5.Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.

Part Number: BZT52-C2V4 - BZT52-C39

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