NEC Electronics Inc UPA800TF, UPA800T-T1B, UPA800T Datasheet

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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

μPA800T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

The μPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

Low Noise

NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

High Gain

|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

A Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC4228)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

 

 

 

μPA800T

Loose products

Embossed tape 8 mm wide. Pin 6 (Q1

 

(50 PCS)

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

 

 

face to perforation side of the tape.

 

 

 

μPA800T-T1

Taping products

 

 

(3 KPCS/Reel)

 

 

 

 

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

 

 

 

 

 

 

+0.1

–0

2.0±0.2

1.3

0.65 0.65

2 1

Y X

5 6

0.2

 

 

 

3

 

4

 

 

0.9±0.1

0.7

+0.1

–0

 

0~0.1

0.15

PIN CONFIGURATION (Top View)

 

 

 

 

 

 

 

 

 

6

 

 

5

4

 

 

 

 

 

 

 

 

 

 

Q1

Q2

1

2

3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

 

 

 

 

PIN CONNECTIONS

 

PARAMETER

SYMBOL

RATING

UNIT

1. Collector (Q1)

4.

Emitter (Q2)

2. Emitter (Q1)

5.

Base (Q2)

 

 

 

 

Collector to Base Voltage

VCBO

20

V

3. Collector (Q2)

6.

Base (Q1)

 

 

 

 

 

 

 

 

 

 

Collector to Emitter Voltage

VCEO

10

V

 

 

 

 

 

 

 

 

 

 

Emitter to Base Voltage

VEBO

1.5

V

 

 

 

 

 

 

 

 

 

 

Collector Current

IC

35

mA

 

 

 

 

 

 

 

 

 

 

Total Power Dissipation

PT

150 in 1 element

mW

 

 

 

 

 

200 in 2 elementsNote

 

 

 

 

Junction Temperature

Tj

150

˚C

 

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

–65 to +150

˚C

 

 

 

 

 

 

 

 

 

 

Note 110 mW must not be exceeded in 1 element.

The information in this document is subject to change without notice.

Document No. ID-3634

(O.D. No. ID-9141)

Date Published

April 1995 P

 

 

Printed in Japan

©

 

1995

 

 

NEC Electronics Inc UPA800TF, UPA800T-T1B, UPA800T Datasheet

 

 

 

 

 

 

 

μPA800T

 

ELECTRICAL CHARACTERISTICS

(TA = 25 °C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

 

 

1.0

μA

 

 

 

 

 

 

 

 

 

 

 

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

 

 

1.0

μA

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

VCE = 3 V, IC = 5 mANote 1

80

 

200

 

 

 

Gain Bandwidth Product

fT

VCE = 3 V, IC = 5 mA

5.5

80

 

GHz

 

 

 

 

 

 

 

 

 

 

 

Feed-back Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

 

 

0.7

pF

 

 

Insertion Power Gain (1)

|S21e|2

VCE = 1 V, IC = 3 mA, f = 2 GHz

4.5

6.5

 

dB

 

 

Insertion Power Gain (2)

|S21e|2

VCE = 3 V, IC = 5 mA, f = 2 GHz

5.5

7.5

 

dB

 

 

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

 

1.9

3.2

dB

 

 

 

 

 

 

 

 

 

 

 

Noise Figure (2)

NF

VCE = 3 V, IC = 5 mA, f = 2 GHz

 

1.9

3.2

dB

 

 

 

 

 

 

 

 

 

 

Notes 1. Pulse Measurement: Pw 350 μs, Duty cycle 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

 

 

Marking

RL

 

 

hFE Value

80 to 200

 

 

TYPICAL

CHARACTERISTICS

(TA = 25 °C)

 

 

PT - TA Characteristics

 

(mW)

 

 

 

 

 

Free Air

 

200

 

 

 

 

 

 

PT

 

 

 

 

 

 

 

Dissipation

 

 

2

Elements

 

 

 

 

Per

 

in

Total

 

100

Element

 

Total Power

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

50

 

 

 

100

150

 

 

Ambient Temperature TA (°C)

 

 

 

IC - VBE Characteristics

 

20

VCE = 3 V

IC (mA)

 

CurrentCollector

10

 

0

0.5

1.0

 

Base to Emitter Voltage VBE (V)

 

Collector Current IC (mA)

DC Current Gain hFE

IC - VCE Characteristics

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

 

 

20

 

 

 

 

 

 

 

160

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μ

 

 

 

 

 

 

 

 

 

 

140

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

120

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

μ

 

 

10

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

60

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

40 μ A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB = 20

μ A

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

1.0

 

 

Collector to Emitter Voltage VCE (V)

hFE - IC Characteristics

200

VCE = 3 V

100

 

 

 

 

50

 

 

 

 

20

 

 

 

 

10

1

5

10

50

0.5

Collector Current IC (mA)

2

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