NEC 2SC5192R-T2, 2SC5192R-T1, 2SC5192R, 2SC5192-T2, 2SC5192-T1 Datasheet

DATA SHEET

SILICON TRANSISTOR

2SC5192

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES

PACKAGE DRAWINGS

•Low Voltage Operation, Low Phase Distortion

•Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

•Large Absolute Maximum Collector Current IC = 100 mA

•4-Pin Mini Mold Package EIAJ: SC-61

ORDERING INFORMATION

PART NUMBER	QUANTITY	PACKING STYLE
2SC5192-T1	3 Kpcs/Reel	Embossed tape 8 mm wide.
		Pin 3 (Base), Pin 4 (Emitter) face to perforation
		side of the tape.
2SC5192-T2	3 Kpcs/Reel	Embossed tape 8 mm wide.
		Pin 1 (Collector), Pin 2 (Emitter) face to
		perforation side of the tape.

(Unit: mm)

			–0.05	2.8		+0.2			–0.05
		+0.1				–0.3		+0.1
				1.5		+0.2
		0.4				–0.1		0.4
				2
								3
2.9±0.2	(1.8)	0.85 0.95			T88					(1.9)
			–0.05	1				4		–0.05
		+0.1						+0.1
		0.6		5˚			5˚		0.4
+0.2	–0.1	0.8									–0.06
1.1										+0.1
					0.1					0.16
				5˚	0 to		5˚

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER	SYMBOL	RATING	UNIT
Collector to Base Voltage	VCBO	9	V
Collector to Emitter Voltage	VCEO	6	V
Emitter to Base Voltage	VEBO	2	V
Collector Current	IC	100	mA
Total Power Dissipation	PT	200	mW
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg	–65 to +150	˚C

PIN CONNECTIONS

1.Collector

2.Emitter

3.Base

4.Emitter

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No.	P10402EJ2V0DS00 (2nd edition)
(Previous No.	TD-2485)
Date Published	August 1995
Printed in Japan	©		1994

								2SC5192
	ELECTRICAL CHARACTERISTICS		(TA = 25 °C)
	PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
	Collector Cutoff Current	ICBO	VCB = 5 V, IE = 0				100	nA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				100	nA
	DC Current Gain	hFE	VCE = 1 V, IC = 3 mANote 1		80		160
	Insertion Power Gain (1)	|S21e|2	VCE = 1 V, IC = 3 mA, f = 2.0 GHz		3	4.0		dB
	Insertion Power Gain (2)	|S21e|2	VCE = 3 V, IC = 20 mA, f = 2.0 GHz			8		dB
	Noise Figure (1)	NF	VCE = 1	V, IC = 3 mA, f = 2.0 GHz		1.7	2.5	dB
	Noise Figure (2)	NF	VCE = 3	V, IC = 7 mA, f = 2.0 GHz		1.5		dB
	Gain Bandwidth Product (1)	fT	VCE = 1	V, IC = 3 mA, f = 2.0 GHz	4	4.5		GHz
	Gain Bandwidth Product (2)	fT	VCE = 3	V, IC = 20 mA, f = 2.0 GHz		9		GHz
	Collector Capacitance	Cre	VCB = 1 V, IE = 0, f = 1.0 MHzNote 2			0.65	0.8	pF

Notes 1. Pulse Measurement: PW ≤ 350 μs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE Classification

Rank	FB
Marking	T88
hFE	80 to 160

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)			Free Air
	200
Dissipation PT	100
Total Power
	0	50	100	150
		Ambient Temperature TA (°C)

				COLLECTOR CURRENT vs.
	30			COLLECTOR TO EMITTER VOLTAGE
																						200 μA
(mA)IC																						180 μA
	20																				160			μA
Current																						140 μA
																						100 μA
																					120			μA
Collector	10																					80 μA
																						60 μA
																						40 μA
																						IB = 20 μA
	0		1			2					3						4		5					6					7
				Collector to Emitter Voltage VCE (V)
						GAIN BANDWIDTH PRODUCT
	10					vs. COLLECTOR CURRENT
(GHz)			f = 2 GHz
	8																			VCE = 3 V
fT
Product
	6																			VCE = 1 V
Bandwidth
	4
Gain	2
	0
	1		2			5					10								20					50					100

Collector Current IC (mA)

2SC5192

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

	100
	50	VCE = 1 V
(mA)IC	20
	5
Current	10
	2
	1
Collector	0.5
	0.2
	0.1
	0.05
	0.02
	0.01
	0	0.5									1

Base to Emitter Voltage VBE (V)

DC CURENT GAIN vs.

COLLECTOR CURRENT

	200
			VCE = 1 V
Gain hFE
CurrentDC	100
	0
	0.1			0.2					0.5			1			2					5			10				20							50 100
										Collector Current IC (mA)
										INSERTION GAIN vs.
	10									COLLECTOR CURRENT
(dB)				f = 2 GHz
	8
																									VCE	= 3 V
2
|S21e|
Gain	6																								VCE = 1 V
Power
	4
Insertion
	2
	0
	1			2								5			10								20				50							100

Collector Current IC (mA)

3