MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
TM200RZ/EZ/GZ-M,-H,24,-2H
• IT (AV) |
Average on-state current .......... |
200A |
• IF (AV) |
Average forward current .......... |
200A |
• VRRM Repetitive peak reverse voltage
.......... 400/800/1200/1600V
• VDRM Repetitive peak off-state voltage
.......... 400/800/1200/1600V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N) File No. E80271
(RZ Type)
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM |
Dimensions in mm |
3–φ6.5 3–M8
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A1 |
20 |
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6 |
18 |
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(RZ) |
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K1 |
K2 |
A2 |
CR |
K1 |
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A1 |
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A2 |
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K2 |
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40 |
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SR |
K1 |
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K1 |
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G1 |
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G1 |
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16 18 16
30 32 30
68.5 |
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68.5 |
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(EZ) |
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150 |
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CR |
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Tab#110, t=0.5 |
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A1 |
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K1 |
K2 |
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A2 |
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SR |
K1 |
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G1 |
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9 |
32 |
39 |
(GZ) |
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LABEL |
23 |
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7 |
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CR |
K1 |
K2 |
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A1 |
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A2 |
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(RZ Type) |
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SR |
K1 |
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G1 |
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(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
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Voltage class |
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Unit |
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M |
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H |
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24 |
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H |
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VRRM |
Repetitive peak reverse voltage |
400 |
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800 |
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1200 |
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1600 |
V |
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VRSM |
Non-repetitive peak reverse voltage |
480 |
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960 |
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1350 |
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1700 |
V |
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VR (DC) |
DC reverse voltage |
320 |
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640 |
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960 |
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1280 |
V |
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VDRM |
Repetitive peak off-state voltage |
400 |
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800 |
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1200 |
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1600 |
V |
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VDSM |
Non-repetitive peak off-state voltage |
480 |
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960 |
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1350 |
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1700 |
V |
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VD (DC) |
DC off-state voltage |
320 |
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640 |
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960 |
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1280 |
V |
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Symbol |
Parameter |
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Conditions |
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Ratings |
Unit |
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IT (RMS), IF (RMS) |
RMS current |
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310 |
A |
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IT (AV), IF (AV) |
Average current |
Single-phase, half-wave 180° conduction, TC=67°C |
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200 |
A |
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ITSM, IFSM |
Surge (non-repetitive) current |
One half cycle at 60Hz, peak value |
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4000 |
A |
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I2t |
I2t for fusing |
Value for one cycle of surge current |
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6.7 × 104 |
A2s |
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di/dt |
Critical rate of rise of on-state current |
VD=1/2VDRM, IG=1.0A, Tj=125°C |
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100 |
A/μs |
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PGM |
Peak gate power dissipation |
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10 |
W |
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PG (AV) |
Average gate power dissipation |
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3.0 |
W |
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VFGM |
Peak gate forward voltage |
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10 |
V |
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VRGM |
Peak gate reverse voltage |
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5.0 |
V |
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IFGM |
Peak gate forward current |
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4.0 |
A |
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Tj |
Junction temperature |
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–40~125 |
°C |
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Tstg |
Storage temperature |
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–40~125 |
°C |
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Viso |
Isolation voltage |
Charged part to case |
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2500 |
V |
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Main terminal screw M8 |
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8.83~10.8 |
N·m |
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— |
Mounting torque |
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90~110 |
kg·cm |
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Mounting screw M6 |
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1.96~3.92 |
N·m |
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20~40 |
kg·cm |
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— |
Weight |
Typical value |
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300 |
g |
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ELECTRICAL CHARACTERISTICS
Symbol |
Parameter |
Test conditions |
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Limits |
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Unit |
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Min. |
Typ. |
Max. |
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IRRM |
Repetitive peak reverse current |
Tj=125°C, VRRM applied |
— |
— |
30 |
mA |
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IDRM |
Repetitive peak off-state current |
Tj=125°C, VDRM applied |
— |
— |
30 |
mA |
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VTM, VFM |
Forward voltage |
Tj=125°C, ITM=IFM=600A, instantaneous meas. |
— |
— |
1.35 |
V |
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dv/dt |
Critical rate of rise of off-state voltage |
Tj=125°C, VD=2/3VDRM |
500 |
— |
— |
V/μs |
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VGT |
Gate trigger voltage |
Tj=25°C, VD=6V, RL=2Ω |
— |
— |
3.0 |
V |
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VGD |
Gate non-trigger voltage |
Tj=125°C, VD=1/2VDRM |
0.25 |
— |
— |
V |
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IGT |
Gate trigger current |
Tj=25°C, VD=6V, RL=2Ω |
15 |
— |
100 |
mA |
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Rth (j-c) |
Thermal resistance |
Junction to case (per 1/2 module) |
— |
— |
0.2 |
°C/W |
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Rth (c-f) |
Contact thermal resistance |
Case to fin, conductive grease applied (per 1/2 module) |
— |
— |
0.1 |
°C/W |
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— |
Insulation resistance |
Measured with a 500V megohmmeter between main terminal |
10 |
— |
— |
MΩ |
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and case |
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Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999