MITSUBISHI RD04HMS2, RD70HUF2 User Manual

APPLICATION NOTE	Silicon RF Power Semiconductors
	Document NO. AN-UHF-128
	Date	:18th Aug. 2011
	Prepared	: S.Nakatsuka
		S.Kametani
	Confirmed	:T.Okawa
	(Taking charge of Silicon RF by
		MIYOSHI Electronics)

SUBJECT: RD04HMS2 & RD70HUF2 two-stage amplifier at f=450-530MHz.(Vdd=12.5V)

Features:

-The evaluation board for RD04HMS2 & RD70HUF2 two-stage amplifier

-Frequency: 450-530MHz

-Vdd: 12.5V

-Input power: 0.2W

-Output power: 72-90W

-Quiescent Current: RD04HMS2 ; 0.1A, RD70HUF2 ; 1A

-Operating Current: 10-13A

-Surface-mounted RF power amplifier structure

PCB L=82.5mm W=60.0mm

Application Note for Silicon RF Power Semiconductors

1/18

RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)

- AN-UHF-128 -

Contents

			Page
1.	Equivalent Circuitry ------------------------------------------------------------		3
2.	Component List and Standard Deliverable -------------------------------------		4
3.	PCB Layout -----------------------------------------------------------------------		6
4.	Standard Land Pattern Dimensions -----------------------------------------		9
5.	Typical RF Characteristics ----------------------------------------------------		10
	5-1.	Frequency characteristics ------------------------------------------	10
	5-2.	Pout vs. Pin characteristics --------------------------------------------	12
	5-3.	Pout vs. Vdd characteristics -----------------------------------------	15
	5-4.	Pout vs. Vgg characteristics --------------------------------------------------	17

Application Note for Silicon RF Power Semiconductors

2/18

.1

3/18	Semiconductors Power RF Silicon for Note Application

Equivalent

Drain Bias

Circuitry

RD70HUF2

Source

Source

Gate Bias1

Via

Electrode3

Electrode1

1Via holes

C35

C40 C41 C42

R6

C21

C23

C25

C27 C29

C17

C13

R3

ML1

ML1

M L1

Gate Bias2

C11

C18

W=5.0

W=4.4

ML1

ML1

ML1

ML2

7Via holes

C37 C38 C39

C9

W=4.6

W=3.6

W=1.8

W=1.3

Via

R5

L4

L5

4Via holes

Via

RF-OUT

C33 C34

C15

Via

Via

W=4.7

C7

Center Source

W=1.9

W=2.0

C32

W=2.0

R1

Via

W=2.0

C1

W=2.0

L1

W=2.0

L2

L3

W=2.0

W=2.0

ML1

R2

Electrode

ML2

Via

ML2

ML2

Via

C8

ML2

ML2

ML2

ML2

ML2

ML2

Via

W=2.0

C5

Via

C16

Via

RF-in

RD04HMS2

C6 C10

C19

W=4.6

W=3.6

W=1.8

W=1.3

Via

C31

C2

C3

C4

1

ML1

ML1

ML1

ML2

C12

R4

W=5.0

W=4.4

L

C14

M

ML1

ML1

C20

R7

C22

C24

C26

C28 C30

1Via holes

	Via					Source	Source	Board material Glass Epoxy Substrate-
		C36				Electrode4	Electrode2
								er=4.7 , TanD=0.018@1GHz
								Micro Strip Line Substrate Thickness
								ML1,T=0.2mm,ML2,T=1.1mm
								Via Hole Dimensions,Diameter=0.8mm Length=1.6mm
								UNIT W[mm]

	RD04HMS2
	&
	RD70HUF2
	stage-two
	amplifier
	at
- 128-UHF-AN -	5V).(Vdd=12 .530MHz-450

RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)

- AN-UHF-128 -

2.Component List and Standard Deliverable

-Component List

No.		Description					P/N	Qty	Manufacturer
Tr	1	MOSFET					RD04HMS2	1	Mitsubishi Electric Corporation
Tr	2	MOSFET					RD70HUF2	1	Mitsubishi Electric Corporation
No.		Description					P/N	Qty	Manufacturer
		Capacitance	Size	Remarks
C	1	100 pF	1608		50	V	GRM1882C1H101JA01D	1	MURATA MANUFACTURING CO.
C	2	6.2 pF	1608	Hi-Q	100 V		GQM1882C2A6R2CB01D	1	MURATA MANUFACTURING CO.
C	3	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	4	33 pF	1608	Hi-Q	50	V	GQM1882C1H330JB01D	1	MURATA MANUFACTURING CO.
C	5	24 pF	1608	Hi-Q	50	V	GQM1882C1H240JB01D	1	MURATA MANUFACTURING CO.
C	6	16 pF	1608	Hi-Q	50	V	GQM1882C1H160JB01D	1	MURATA MANUFACTURING CO.
C	7	100 pF	1608		50	V	GRM1882C1H101JA01D	1	MURATA MANUFACTURING CO.
C	8	100 pF	1608		50	V	GRM1882C1H101JA01D	1	MURATA MANUFACTURING CO.
C	9	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	10	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	11	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	12	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	13	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	14	22 pF	1608	Hi-Q	50	V	GQM1882C1H220JB01D	1	MURATA MANUFACTURING CO.
C	15	910 pF	2012		50	V	GRM2162C1H911JA01D	1	MURATA MANUFACTURING CO.
C	16	910 pF	2012		50	V	GRM2162C1H911JA01D	1	MURATA MANUFACTURING CO.
C	17	100 pF	2012	Hi-Q	250 V		GQM2195C2E101JB12D	1	MURATA MANUFACTURING CO.
C	18	100 pF	2012	Hi-Q	250 V		GQM2195C2E101JB12D	1	MURATA MANUFACTURING CO.
C	19	100 pF	2012	Hi-Q	250 V		GQM2195C2E101JB12D	1	MURATA MANUFACTURING CO.
C	20	100 pF	2012	Hi-Q	250 V		GQM2195C2E101JB12D	1	MURATA MANUFACTURING CO.
C	21	33 pF	2012	Hi-Q	250 V		GQM2195C2E330JB12D	1	MURATA MANUFACTURING CO.
C	22	33 pF	2012	Hi-Q	250 V		GQM2195C2E330JB12D	1	MURATA MANUFACTURING CO.
C	23	43 pF	2012	Hi-Q	250 V		GQM2195C2E430JB12D	1	MURATA MANUFACTURING CO.
C	24	43 pF	2012	Hi-Q	250 V		GQM2195C2E430JB12D	1	MURATA MANUFACTURING CO.
C	25	18 pF	2012	Hi-Q	250 V		GQM2195C2E180JB12D	1	MURATA MANUFACTURING CO.
C	26	18 pF	2012	Hi-Q	250 V		GQM2195C2E180JB12D	1	MURATA MANUFACTURING CO.
C	27	3 pF	2012	Hi-Q	250 V		GQM2195C2E3R0CB12D	1	MURATA MANUFACTURING CO.
C	28	3 pF	2012	Hi-Q	250 V		GQM2195C2E3R0CB12D	1	MURATA MANUFACTURING CO.
C	29	3 pF	2012	Hi-Q	250 V		GQM2195C2E3R0CB12D	1	MURATA MANUFACTURING CO.
C	30	3 pF	2012	Hi-Q	250 V		GQM2195C2E3R0CB12D	1	MURATA MANUFACTURING CO.
C	31	2.2 pF	2012	Hi-Q	250 V		GQM2195C2E2R2CB12D	1	MURATA MANUFACTURING CO.
C	32	330 pF	3216		200 V		GRM31M2C2D331JY21B	1	MURATA MANUFACTURING CO.
C	33	10000 pF	1608		50	V	GRM188B11H103KA01	1	MURATA MANUFACTURING CO.
C	34	1000 pF	1608		50	V	GRM1882C1H102JA01	1	MURATA MANUFACTURING CO.
C	35	1000 pF	1608		50	V	GRM1882C1H102JA01	1	MURATA MANUFACTURING CO.
C	36	1000 pF	1608		50	V	GRM1882C1H102JA01	1	MURATA MANUFACTURING CO.
C	37	22 μF	-		50	V	H1002	1	NICHICON Corporation
C	38	10000 pF	1608		50	V	GRM188B11H103KA01	1	MURATA MANUFACTURING CO.
C	39	1000 pF	1608		50	V	GRM1882C1H102JA01	1	MURATA MANUFACTURING CO.
C	40	220 μF	-		35	V	EEUFC1V221	1	Panasonic Corporation
C	41	910 pF	2012		50	V	GRM2162C1H911JA01D	1	MURATA MANUFACTURING CO.
C	42	910 pF	2012		50	V	GRM2162C1H911JA01D	1	MURATA MANUFACTURING CO.

Application Note for Silicon RF Power Semiconductors

4/18

RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)

- AN-UHF-128 -

* Inductor of Rolling Coil measurement condition : f=100MHz

No.

Description

P/N

Qty

Manufacturer

Remarks

Inductance

Diameter

Wire

Φ

Inside Φ

T/N of coils

L

1

12

nH *

0.23

mm

1.1

mm

3

2303A

1

YC Corporation Co.,Ltd.

Enameled wire

L

2

8

nH *

0.23

mm

1.1

mm

2

2302S

1

YC Corporation Co.,Ltd.

Enameled wire

L

3

8

nH *

0.23

mm

1.1

mm

2

2302S

1

YC Corporation Co.,Ltd.

Enameled wire

L

4

37

nH *

0.40

mm

1.6

mm

7

4007C

1

YC Corporation Co.,Ltd.

Enameled wire

L

5

25

nH *

0.80

mm

2.2

mm

5

8005C

1

YC Corporation Co.,Ltd.

Enameled wire

No.

Description

P/N

Qty

Manufacturer

Resistance

Size

R

1

47 ohm

1608

RPC05N470J

1

TAIYOSHA ELECTRIC CO.

R

2

2.2 ohm

2012

RPC10T2R2J

1

TAIYOSHA ELECTRIC CO.

R

3

100 ohm

2012

RPC10T101J

1

TAIYOSHA ELECTRIC CO.

R

4

100 ohm

2012

RPC10T101J

1

TAIYOSHA ELECTRIC CO.

R

5

3900 ohm

1608

RPC05T392J

1

TAIYOSHA ELECTRIC CO.

R

6

2700 ohm

1608

RPC05T272J

1

TAIYOSHA ELECTRIC CO.

R

7

2700 ohm

1608

RPC05T272J

1

TAIYOSHA ELECTRIC CO.

No.

Description

P/N

Qty

Manufacturer

Pb

PCB

MS3A0208

1

Homebuilt

OPTION

Rc

SMA

female connector

PAF-S00-002

2

GIGALANE Corporation

Bc

1

Bias connector

red color

TM-605R

2

MSK Corporation

Bc

2

Bias connector

black color

TM-605B

2

MSK Corporation

Pe

Aluminum pedestal

-

1

Homebuilt

Pd

Thermal Silicon Compound

G746

-

Shin-Etsu Chemical Co.,Ltd

Cu

1

Copper plate

2.8 x 1.8 x 0.4t (mm)

-

1

Homebuilt

Conducting wire

-

6

Homebuilt

Screw

M3

-

2

-

Screw

M2.6

-

10

-

Screw

M2

-

10

-

-Standard Deliverable

TYPE1	Evaluation Board assembled with all the component
TYPE2	PCB (raw board)

Application Note for Silicon RF Power Semiconductors

5/18

RD04HMS2 & RD70HUF2 two-stage amplifier at 450-530MHz. (Vdd=12.5V)

- AN-UHF-128 -

3.PCB Layout

BOARD OUTLINE: 82.5*60.0(mm)

TOP VIEW (Layer 1)

BOTTOM VIEW (Layer 6), Perspective through Top View

Application Note for Silicon RF Power Semiconductors

6/18