MITSUBISHI RA45H4045MR User Manual

< Silicon RF Power Modules >

RA45H4045MR

RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400to 450-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).

At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

•Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)

•Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW

•Broadband Frequency Range: 400-450MHz

•Low-Power Control Current IGG=1mA (typ) at VGG=5V

BLOCK DIAGRAM
	2	3
1		4
		5
1	RF Input (Pin)
2	Gate Voltage (VGG), Power Control
3	Drain Voltage (VDD), Battery
4	RF Output (Pout)
5	RF Ground (Case)
	PACKAGE CODE: H2RS

•Module Size: 66 x 21 x 9.88 mm

•Reverse PIN type

•Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RoHS COMPLIANCE

•RA45H4045MR-101 is a RoHS compliant products.

•RoHS compliance is indicate by the letter “G” after the Lot Marking.

•This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

	ORDER NUMBER	SUPPLY FORM
	RA45H4045MR-101	Antistatic tray,
		10 modules/tray

Publication Date : Oct 2011

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< Silicon RF Power Modules >

RA45H4045MR

RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

	MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
	SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
	VDD	Drain Voltage	VGG<5V	17	V
	VGG	Gate Voltage	VDD<12.5V, Pin=0mW	6	V
	Pin	Input Power	f=400-450MHz,	100	mW
	Pout	Output Power		55	W
			ZG=ZL=50
	Tcase(OP)	Operation Case Temperature Range		-30 to +110	°C
	Tstg	Storage Temperature Range		-40 to +110	°C

Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL	PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
f		Frequency Range		400	-	450	MHz
Pout		Output Power		45	-	-	W
			VDD=12.5V
T		Total Efficiency		35	-	-	%
			VGG=5V
2fo		2nd Harmonic		-	-	-25	dBc
			Pin=50mW
in		Input VSWR		-	-	3:1	—
IGG		Gate Current		-	1	-	mA
—		Stability	VDD=10.0-15.2V, Pin=25-70mW,	No parasitic oscillation			—
			Pout<55W (VGG control), Load VSWR=3:1
—		Load VSWR Tolerance	VDD=15.2V, Pin=50mW, Pout=45W (VGG control),	No degradation or destroy			—
			Load VSWR=20:1
All Parameters, Conditions, Ratings and Limits are subject to change without notice

Publication Date : Oct 2011

2

< Silicon RF Power Modules >

RA45H4045MR

RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY

		80							80
(W)	(-)	70				Pout			70
out		60							60	TOTAL EFFICIENCY
OUTPUT POWER P	in
	INPUT VSWR	50			T				50
		40							40		(%)
		30							30
							VDD=12.5V				T
		20							20
							VGG=5V
		10			in		Pin=50mW		10
		0							0
		390	400	410	420	430	440	450	460

FREQUENCY f(MHz)

	2nd, 3rd HARMONICS versus FREQUENCY
	-20
						VDD=12.5V
(dBc)	-30					VGG=5V
						Pin=50mW
	-40
HARMONICS
	-50
	-60	3rd			2nd
	-70
	390	400	410	420	430	440	450	460
			FREQUENCY f(MHz)

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

			60								24
		POWER GAIN Gp(dB)	50					Pout			20	(A)
OUTPUT POWER												DD
					Gp
			40								16	DRAIN CURRENT I
	(dBm)
			30								12
	out						IDD
	P		20								8
			10					f=400MHz,			4
								VDD=12.5V,
			0					VGG=5V			0
			-15	-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

			60							24
OUTPUT POWER		POWER GAIN Gp(dB)	50		Gp				Pout	20	(A)
											DD
	(dBm)		40							16	DRAIN CURRENT I
			30							12
	out
	P		20			IDD				8
			10					f=430MHz,		4
								VDD=12.5V,
								VGG=5V
			0							0
			-15	-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

			60								24
OUTPUT POWER		POWER GAIN Gp(dB)	50						Pout		20	(A)
					Gp							DD
			40								16	DRAIN CURRENT I
	(dBm)
			30								12
	out
	P		20				IDD				8
			10					f=450MHz,			4
								VDD=12.5V,
								VGG=5V
			0								0
			-15	-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

(W)	100														20
	90		f=400MHz,									Pout			18
	80		VGG=5V,												16	(A)
out			Pin=50mW
P																DD
	70														14
POWEROUTPUT	60														12	CURRENTDRAINI
	50											IDD			10
	40														8
	30														6
	20														4
	10														2
	0														0
	2		4	6		8		10		12		14		16
			DRAIN VOLTAGE VDD(V)

Publication Date : Oct 2011

OUTPUT POWER Pout(W)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

100													20
90	f=430MHz,												18
80	VGG=5V,								Pout				16	(A)
	Pin=50mW
70													14	DD
														I
60													12	CURRENT
30													6
50											IDD		10
40													8	DRAIN
20													4
10													2
0													0
2	4	6		8		10		12		14		16
	DRAIN VOLTAGE VDD(V)

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