MITSUBISHI RA55H3340M User Manual

<Silicon RF Power Modules >

RA55H3340M

RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

•EnhancementMode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)

•Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW

•Broadband Frequency Range: 330-400MHz

•Low-Power Control Current IGG=1mA (typ) at VGG=5V

•Module Size: 66 x 21 x 9.88 mm

•Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RoHS COMPLIANCE

• RA55H3340M-101 is a RoHS compliant products.

BLOCK DIAGRAM
	2	3
1		4
		5
1	RF Input (Pin)
2	Gate Voltage (VGG), Power Control
3	Drain Voltage (VDD), Battery
4	RF Output (Pout)
5	RF Ground (Case)
	PACKAGE CODE: H2S

•RoHS compliance is indicate by the letter “G” after the Lot Marking.

•This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

	ORDER NUMBER	SUPPLY FORM
	RA55H3340M-101	Antistatic tray,
		10 modules/tray

Publication Date : Oct.2011

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<Silicon RF Power Modules >

RA55H3340M

RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL	PARAMETER	CONDITIONS		RATING	UNIT
VDD	Drain Voltage	VGG<5V		17	V
VGG	Gate Voltage	VDD<12.5V, Pin=0mW		6	V
Pin	Input Power	f=330-400MHz,		100	mW
Pout	Output Power			65	W
		ZG=ZL=50Ω
Tcase(OP)	Operation Case Temperature Range			-30 to +110	°C
Tstg	Storage Temperature Range			-40 to +110	°C

Note1. The above parameters are independently guaranteed.

Note2. In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

	SYMBOL	PARAMETER	CONDITIONS		MIN	TYP	MAX	UNIT
	f	Frequency Range		330		-	400	MHz
	Pout	Output Power		55		-	-	W
			VDD=12.5V
	ηT	Total Efficiency		35		-	-	%
			VGG=5V
	2fo	2nd Harmonic		-		-	-50	dBc
			Pin=50mW
	ρin	Input VSWR		-		-	3:1	—
	IGG	Gate Current		-		1	-	mA
	—	Stability	VDD=10.0-15.2V, Pin=25-70mW,		No parasitic oscillation			—
			Pout<65W (VGG control), Load VSWR=3:1
	—	Load VSWR Tolerance	VDD=15.2V, Pin=50mW, Pout=55W (VGG control),		No degradation or destroy			—
			Load VSWR=20:1

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Oct.2011

2

<Silicon RF Power Modules >

RA55H3340M

RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY,	2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY

			80		80			-30
	(W)		70	Pout	70		HARMONICS (dBc)	-40	VDD=12.5V
		(-)	60		60	(%)			VGG=5V
	out								Pin=50mW
	OUTPUT POWER P	in	50		50	T		-50
		INPUT VSWR ρ		ηT		EFFICIENCYη			3rd
			40		40
			30	VDD=12.5V	TOTAL			-60	2nd
					30
			20	VGG=5V	20			-70
				Pin=50mW
			10		10
				ρin
			0		0			-80
				320 330 340 350 360 370 380 390 400 410					320 330 340 350 360 370 380 390 400 410
				FREQUENCY f(MHz)					FREQUENCY f(MHz)

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

			60						24	(A)				60						24
		POWER GAIN Gp(dB)	50	Gp				Pout	20				POWER GAIN Gp(dB)	50	Gp				Pout	20	(A)
OUTPUT POWER										DD	OUTPUT POWER										DD
	(dBm)		40						16	DRAIN CURRENT I		(dBm)		40						16	DRAIN CURRENT I
			30						12					30						12
	out						IDD					out
	P		20						8			P		20		IDD		f=365MHz,		8
			10					f=330MHz,	4					10				VDD=12.5V,		4
								VDD=12.5V,										VGG=5V
								VGG=5V
			0						0					0						0
			-10	-5	0	5	10	15	20					-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

INPUT POWER Pin(dBm)

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

			60						24
OUTPUT POWER		POWER GAIN Gp(dB)	50	Gp				Pout	20	(A)
										DD
	(dBm)		40						16	DRAIN CURRENT I
			30						12
	out					IDD
	P		20						8
			10				f=400MHz,		4
							VDD=12.5V,
			0				VGG=5V		0
			-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

OUTPUT POWER and DRAIN CURRENT	OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE	versus DRAIN VOLTAGE

	120							24			120
(W)	110	f=330MHz,						22		(W)	110
	100	VGG=5V,						20	(A)		100
out	90	Pin=50mW					Pout	18		out	90
P									DD	P
	80							16			80
OUTPUT POWER									DRAIN CURRENT I	OUTPUT POWER
	70							14			70
	60						IDD	12			60
	50							10			50
	40							8			40
	30							6			30
	20							4			20
	10							2			10
	0							0			0
	2	4	6	8	10	12	14	16
		DRAIN VOLTAGE VDD(V)

							24
	f=365MHz,						22
	VGG=5V,						20	(A)
	Pin=50mW						18
						Pout		DD
							16
								I
							14	CURRENT
							12
						IDD	10
							8
							6
								DRAIN
							4
							2
							0
2	4	6	8	10	12	14	16
	DRAIN VOLTAGE VDD(V)

Publication Date : Oct.2011

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