APPLICATION NOTE Silicon RF Power Semiconductors
Document NO. AN-VHF-055
Date |
: 15h Nov. 2011 |
Prepared |
: H.Sakairi |
|
K.Mori |
Confirmed |
: T.Okawa |
(Taking charge of Silicon RF by MIYOSHI Electronics)
SUBJECT: RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
Features:
-The evaluation board for RD01MUS2B
-Frequency: 135-175MHz
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Typical input power: |
30mW |
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Typical output power: |
1.45W |
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Quiescent Current: |
40mA |
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Operating Current: |
0.29A |
-Surface-mounted RF power amplifier structure
Gate Bias |
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Drain Bias |
GND |
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GND |
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RF IN |
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RFOUT |
PCB L=90mm W=40mm
Application Note for Silicon RF Power Semiconductors
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RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
Contents
1. |
Equivalent Circuitry |
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Page |
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3 |
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2. |
PCB Layout ----------------------------------------------------------------------- |
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4 |
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3. |
Component List and ------------------------------------------Standard Deliverable |
5 |
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4. |
Thermal Design of Heat Sink |
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6 |
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5. |
Typical RF Characteristics ---------------------------------------------------- |
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7 |
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5-1. |
Frequency vs. --------------------------------------------- |
(Vds=7.2V) |
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7 |
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5-2. |
RF Power vs. ------------------------------------------- |
(Vds=7.2V) |
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8 |
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5-3. |
Drain Quiescent ------------------------Current vs. |
(Vds=7.2V) |
12 |
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5-4. |
DC Power Supply ---------------------------------vs. |
(Idq=40mA) |
14 |
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Application Note for Silicon RF Power Semiconductors
2/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
1.Equivalent Circuitry
Application Note for Silicon RF Power Semiconductors
3/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
2.PCB Layout
BOARD OUTLINE: 90.0*40.0(mm)
MATERIAL : FR-4<R1705>
THICKNESS : 0.8(mm)
TOP VIEW
RF-in |
RF-out |
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MITSUBISHI RF Power Amplifier |
TOP VIEW ( Parts mounting )
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22u |
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1000p |
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1000p |
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0.022μ |
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0.022μ |
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RF-in |
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4.7Kohm |
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4007C |
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RF-out |
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160p |
C UT |
C UT |
C UT |
CUT |
C UT |
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C UT |
C UT |
160p |
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2303S |
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2304C |
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2309A |
2311A |
2309A |
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2303S |
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36p |
22p 27p |
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22p |
47ohm |
430p |
10p |
7p |
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18p |
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MITSUBISHI RF Power Amplifier |
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Application Note for Silicon RF Power Semiconductors
4/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
3.Component List
-Component List
No. |
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Description |
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P/N |
Qty |
Manufacturer |
Tr |
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MOSFET |
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RD01MUS2B |
1 |
Mitsubishi Electric Corporation |
C |
1 |
160 pF |
2012 |
50V |
GRM2162C1H161JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
2 |
36 pF |
1608 |
50V |
GRM1882C1H360JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
3 |
22 pF |
1608 |
50V |
GRM1882C1H220JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
4 |
27 pF |
1608 |
50V |
GRM1882C1H270JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
5 |
22 pF |
1608 |
50V |
GRM1882C1H220JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
6 |
430 pF |
1608 |
50V |
GRM1882C1H431JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
7 |
10 pF |
1608 |
50V |
GRM1882C1H100JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
8 |
7 pF |
1608 |
50V |
GRM1882C1H7R0JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
9 |
18 pF |
1608 |
50V |
GRM1882C1H180JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
10 |
160 pF |
2012 |
50V |
GRM2162C1H161JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
11 |
1000 pF |
2012 |
50V |
GRM2162C1H102JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
12 |
0.022 μF |
1608 |
50V |
GRM188BC1H223KA01D |
1 |
MURATA MANUFACTURING CO. |
C |
13 |
1000 pF |
2012 |
50V |
GRM2162C1H102JA01D |
1 |
MURATA MANUFACTURING CO. |
C |
14 |
0.022 μF |
1608 |
50V |
GRM188BC1H223KA01D |
1 |
MURATA MANUFACTURING CO. |
C |
15 |
22 uF |
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50V |
H1002 |
1 |
NICHICON CORPORATION |
L |
1 |
40 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
2 |
51 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=11 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
3 |
40 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=9 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
4 |
12 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
5 |
17 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=4 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
6 |
12 nH * |
Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=3 |
1 |
YC CORPORATION Co.,Ltd. |
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L |
7 |
37 nH * |
Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 |
1 |
YC CORPORATION Co.,Ltd. |
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R |
1 |
4.7k ohm |
2012 |
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RPC10T472J |
1 |
TAIYOSHA ELECTRIC CO. |
R |
2 |
100 ohm |
1608 |
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RPC05T101J |
1 |
TAIYOSHA ELECTRIC CO. |
Pb |
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PCB |
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MS3A0138 |
1 |
Homebuilt |
Rc |
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SMA |
female connector |
HRM-300-118S |
2 |
HIROSE ELECTRIC CO.,LTD |
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Bc |
1 |
Bias connector |
red color |
TM-605R |
2 |
MSK Corporation |
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Bc |
2 |
Bias connector |
black color |
TM-605B |
2 |
MSK Corporation |
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Pe |
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Aluminum pedestal |
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1 |
Homebuilt |
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Conducting wire |
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4 |
Homebuilt |
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Screw |
M2 |
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11 |
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*Inductor of Rolling Coil measurement condition : f=100MHz
-Standard Deliverable
TYPE1 |
Evaluation Board assembled with all the component |
TYPE2 |
PCB (raw board) |
Application Note for Silicon RF Power Semiconductors
5/16
RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-055-
4.Thermal Design of Heat Sink
Tr |
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Junction point of MOSFET chip |
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Pb |
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(in this package) |
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Rth(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom) |
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=45.0 (deg. C./W) |
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Pe |
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Tch(delta)=(Pout/Efficiency-Pout+Pin) x Rth(ch-Pb bottom)=(1W/60%-1W+0.03) x 45 = 31 (deg. C.) Also, operating Tj (“Tj(op)”)=120 (deg. C.), in case of RD series that Tch(max) = 150 (deg. C.) Therefore TPb bottom-air as delta temperature between Pb bottom and the ambient 60 deg. C. TPb bottom-air=“Tj(op)”- Tch(delta) - Ta(60deg.C.)=120-31-60=29 (deg. C.)
In terms of long-term reliability, “Tj(op)” has to be kept less than 120 deg. C. i.e. TPb bottom-air has to be less than 29 deg. C..
The thermal resistance of the heat sink to border it:
Rth(Pb bottom-air)=TPb bottom-air/(Pout/Efficiency-Pout+Pin)=29/(1W/60%-1W+0.03)= 41 (deg. C./W) Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 41 deg. C./W.
Application Note for Silicon RF Power Semiconductors
6/16
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