MITSUBISHI RA30H1317M User Manual

<Silicon RF Power Modules >

RA30H1317M

RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around

3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

•Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)

•Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW

•Broadband Frequency Range: 135-175MHz

•Low-Power Control Current IGG=1mA (typ) at VGG=5V

•Module Size: 66 x 21 x 9.88 mm

•Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

BLOCK DIAGRAM
	2	3
1		4
		5
1	RF Input (Pin)
2	Gate Voltage (VGG), Power Control
3	Drain Voltage (VDD), Battery
4	RF Output (Pout)
5	RF Ground (CaseN)
	PACKAGE CODE: H2S

RoHS COMPLIANCE

•RA30H1317M-101 is a RoHS compliant products.

•RoHS compliance is indicate by the letter “G” after the Lot Marking.

•This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

	ORDER NUMBER	SUPPLY FORM
	RA30H1317M-101	Antistatic tray,
		10 modules/tray

Publication Date : Jul.2011

1

<Silicon RF Power Modules >

RA30H1317M

RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

	MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
	SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
	VDD	Drain Voltage	VGG<5V	17	V
	VGG	Gate Voltage	VDD<12.5V, Pin=0mW	6	V
	Pin	Input Power	f=135-175MHz,	100	mW
	Pout	Output Power		45	W
			ZG=ZL=50
	Tcase(OP)	Operation Case Temperature Range		-30 to +110	°C
	Tstg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

	SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
	f	Frequency Range		135	-	175	MHz
	Pout	Output Power		30	-	-	W
	T	Total Efficiency	VDD=12.5V,	40	-	-	%
	2fo	2nd Harmonic	VGG=5V,	-	-	-35	dBc
			Pin=50mW
	in	Input VSWR		-	-	3:1	—
	IGG	Gate Current		-	1	-	mA
	—	Stability	VDD=10.0-15.2V, Pin=25-70mW,	No parasitic oscillation			—
			Pout<30W (VGG control), Load VSWR=3:1	more than -60dBc
	—	Load VSWR Tolerance	VDD=15.2V, Pin=50mW, Pout=30W (VGG control),	No degradation or destroy			—
			Load VSWR=20:1

All parameters, conditions, ratings, and limits are subject to change without notice.

Publication Date : Jul.2011

2

<Silicon RF Power Modules >

RA30H1317M

RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY,	2nd, 3rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY

		60					120
(W)	(-)	50			Pout		100	TOTAL EFFICIENCY
out
OUTPUT POWER P	in	40					80
	INPUT VSWR				T
									(%)
		30					60
									T
		20				VDD=12.5V	40
						VGG=5V
		10	in			Pin=50mW	20
		0					0
		130	140	150	160	170	180

FREQUENCY f(MHz)

	-20	VDD=12.5V
(dBc)	-30	VGG=5V
		Pin=50mW
	-40
HARMONICS
	-50			2nd
	-60
				3rd
	-70
	130	140	150	160	170	180
		FREQUENCY f(MHz)

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER

			60						12						60							12
		POWER GAIN Gp(dB)	50					Pout	10					POWER GAIN Gp(dB)	50						Pout	10
OUTPUT POWER				Gp						DRAIN CURRENT		OUTPUT POWER					Gp						DRAIN CURRENT
			40						8
	(dBm)										(A)		(dBm)		40							8		(A)
			30						6						30				IDD			6
	out		20						4		DD		out		20							4		DD
	P						f=135MHz,				I		P							f=155MHz,				I
						IDD
			10				VDD=12.5V,		2						10					VDD=12.5V,		2
							VGG=5V													VGG=5V
			0						0						0							0
			-10	-5	0	5	10	15	20							-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

INPUT POWER Pin(dBm)

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

			60						12
		POWER GAIN Gp(dB)	50				Pout		10
OUTPUT POWER										DRAIN CURRENT
			40	Gp					8
	(dBm)
			30						6		(A)
	out		20			IDD			4		DD
	P						f=175MHz,				I
			10				VDD=12.5V,		2
							VGG=5V
			0						0
			-10	-5	0	5	10	15	20

INPUT POWER Pin(dBm)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

	90							18
(W)	80	f=135MHz,						16
	70	VDD=12.5V,						14	(A)
out
		VGG=5V
P	60							12	DD
OUTPUT POWER									DRAIN CURRENT I
	50					Pout		10
	40							8
	30					IDD		6
	20							4
	10							2
	0							0
	2	4	6	8	10	12	14	16
		DRAIN VOLTAGE VDD(V)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

	90							18
(W)	80	f=155MHz,						16
		VDD=12.5V,							(A)
out	70	VGG=5V						14
P	60							12	DD
OUTPUT POWER						Pout			DRAIN CURRENT I
	50							10
	40							8
	30						IDD	6
	20							4
	10							2
	0							0
	2	4	6	8	10	12	14	16
		DRAIN VOLTAGE VDD(V)

Publication Date : Jul.2011

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