MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75DY-2H
• IC |
Collector current .......................... |
75A |
• VCEX |
Collector-emitter voltage ......... |
1000V |
• hFE |
DC current gain............................... |
75 |
• Insulated Type |
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• UL Recognized |
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Yellow Card No. E80276 (N) |
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File No. E80271 |
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APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM |
Dimensions in mm |
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108 |
(7.5) |
93 |
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12 |
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C2E1 |
E2 |
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23 |
23 |
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φ6.5 |
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8 |
15 |
8 |
37 |
30 |
LABEL |
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(7.5) |
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46.5 |
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B2 |
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E2 |
10.5 |
E2 |
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B2 |
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13 |
34 |
C1 |
E1 |
10.5 |
C1 |
B1 |
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5 |
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E2 |
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C2E1 |
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Tab#110, t=0.5 |
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M5 |
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6.5 |
E1 |
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B1 |
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23 |
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
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VCEX (SUS) |
Collector-emitter voltage |
IC=1A, VEB=2V |
1000 |
V |
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VCEX |
Collector-emitter voltage |
VEB=2V |
1000 |
V |
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VCBO |
Collector-base voltage |
Emitter open |
1000 |
V |
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VEBO |
Emitter-base voltage |
Collector open |
7 |
V |
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IC |
Collector current |
DC |
75 |
A |
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–IC |
Collector reverse current |
DC (forward diode current) |
75 |
A |
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PC |
Collector dissipation |
TC=25°C |
500 |
W |
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IB |
Base current |
DC |
4 |
A |
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–ICSM |
Surge collector reverse current |
Peak value of one cycle of 60Hz (half wave) |
750 |
A |
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(forward diode current) |
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Tj |
Junction temperature |
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–40~+150 |
°C |
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Tstg |
Storage temperature |
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–40~+125 |
°C |
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Viso |
Isolation voltage |
Charged part to case, AC for 1 minute |
2500 |
V |
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Main terminal screw M5 |
1.47~1.96 |
N·m |
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— |
Mounting torque |
15~20 |
kg·cm |
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Mounting screw M6 |
1.96~2.94 |
N·m |
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20~30 |
kg·cm |
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— |
Weight |
Typical value |
250 |
g |
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ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol |
Parameter |
Test conditions |
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Limits |
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Unit |
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Min. |
Typ. |
Max. |
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ICEX |
Collector cutoff current |
VCE=1000V, VEB=2V |
— |
— |
1.0 |
mA |
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ICBO |
Collector cutoff current |
VCB=1000V, Emitter open |
— |
— |
1.0 |
mA |
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IEBO |
Emitter cutoff current |
VEB=7V |
— |
— |
100 |
mA |
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VCE (sat) |
Collector-emitter saturation voltage |
IC=75A, IB=1.5A |
— |
— |
2.5 |
V |
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VBE (sat) |
Base-emitter saturation voltage |
— |
— |
3.5 |
V |
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–VCEO |
Collector-emitter reverse voltage |
–IC=75A (diode forward voltage) |
— |
— |
1.8 |
V |
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hFE |
DC current gain |
IC=75A, VCE=2.8V/5V |
75/100 |
— |
— |
— |
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ton |
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— |
— |
2.5 |
μs |
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ts |
Switching time |
VCC=600V, IC=75A, IB1=–IB2=1.5A |
— |
— |
15 |
μs |
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tf |
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— |
— |
3.0 |
μs |
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Rth (j-c) Q |
Thermal resistance |
Transistor part (per 1/2 module) |
— |
— |
0.25 |
°C/W |
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Rth (j-c) R |
(junction to case) |
Diode part (per 1/2 module) |
— |
— |
1.2 |
°C/W |
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Rth (c-f) |
Contact thermal resistance |
Conductive grease applied (per 1/2 module) |
— |
— |
0.13 |
°C/W |
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(case to fin) |
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Feb.1999
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