MJL3281A (NPN)
MJL1302A (PNP)
Preferred Devices
Complementary Bipolar
Power Transistors
Features
•Exceptional Safe Operating Area
•NPN/PNP Gain Matching within 10% from 50 mA to 5 A
•Excellent Gain Linearity
•High BVCEO
•High Frequency
•Pb−Free Packages are Available
Benefits
•Reliable Performance at Higher Powers
•Symmetrical Characteristics in Complementary Configurations
•Accurate Reproduction of Input Signal
•Greater Dynamic Range
•High Amplifier Bandwith
Applications
•High−End Consumer Audio Products ♦Home Amplifiers
♦Home Receivers
•Professional Audio Amplifiers
♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Collector−Emitter Voltage |
VCEO |
260 |
Vdc |
Collector−Base Voltage |
VCBO |
260 |
Vdc |
Emitter−Base Voltage |
VEBO |
5.0 |
Vdc |
Collector−Emitter Voltage − 1.5 V |
VCEX |
260 |
Vdc |
Collector Current − Continuous |
IC |
15 |
Adc |
− Peak (Note 1) |
|
25 |
|
|
|
|
|
Base Current − Continuous |
IB |
1.5 |
Adc |
Total Power Dissipation @ TC = 25°C |
PD |
200 |
Watts |
Derate Above 25°C |
|
1.43 |
W/°C |
|
|
|
|
Operating and Storage Junction |
TJ, Tstg |
− 65 to |
°C |
Temperature Range |
|
+150 |
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
RθJC |
0.625 |
°C/W |
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
http://onsemi.com
15 AMPERES
COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS
200 WATTS
MARKING DIAGRAM
1 2
3
TO−264
CASE 340G
STYLE 2
xxxx A YY WW G
|
MJLxxxxA |
|
AYYWWG |
1 |
3 |
BASE |
EMITTER |
2COLLECTOR
=3281 or 1302
=Location Code
=Year
=Work Week
=Pb−Free Package
ORDERING INFORMATION
Device |
Package |
Shipping |
|
|
|
MJL3281A |
TO−264 |
25 Units/Rail |
|
|
|
MJL3281AG |
TO−264 |
25 Units/Rail |
|
(Pb−Free) |
|
|
|
|
MJL1302A |
TO−264 |
25 Units/Rail |
|
|
|
MJL1302AG |
TO−264 |
25 Units/Rail |
|
(Pb−Free) |
|
|
|
|
|
|
|
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2005 |
1 |
Publication Order Number: |
October, 2005 − Rev. 9 |
|
MJL3281A/D |
MJL3281A (NPN) MJL1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage |
VCEO(sus) |
|
|
Vdc |
(IC = 100 mAdc, IB = 0) |
|
260 |
− |
|
Collector Cutoff Current |
ICBO |
|
|
μAdc |
(VCB = 260 Vdc, IE = 0) |
|
− |
50 |
|
Emitter Cutoff Current |
IEBO |
|
|
μAdc |
(VEB = 5 Vdc, IC = 0) |
|
− |
5 |
|
SECOND BREAKDOWN |
|
|
|
|
|
|
|
|
|
Second Breakdown Collector with Base Forward Biased |
IS/b |
|
|
Adc |
(VCE = 50 Vdc, t = 1 s (non−repetitive) |
|
4 |
− |
|
(VCE = 100 Vdc, t = 1 s (non−repetitive) |
|
1 |
− |
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
DC Current Gain |
hFE |
|
|
|
(IC = 500 mAdc, VCE = 5 Vdc) |
|
75 |
150 |
|
(IC = 1 Adc, VCE = 5 Vdc) |
|
75 |
150 |
|
(IC = 3 Adc, VCE = 5 Vdc) |
|
75 |
150 |
|
(IC = 5 Adc, VCE = 5 Vdc) |
|
75 |
150 |
|
(IC = 8 Adc, VCE = 5 Vdc) |
|
45 |
− |
|
Collector−Emitter Saturation Voltage |
VCE(sat) |
|
|
Vdc |
(IC = 10 Adc, IB = 1 Adc) |
|
− |
3 |
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
Current−Gain − Bandwidth Product |
fT |
|
|
MHz |
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) |
|
30 |
− |
|
Output Capacitance |
Cob |
|
|
pF |
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) |
|
− |
600 |
|
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2
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