Fairchild Semiconductor BD439, BD441 Datasheet
BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
BD439/441
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
V
CES
VCEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: BD439
: BD441
60
80
Collector-Emitter Voltage
: BD439
: BD441
60
80
Collector-Emitter Voltage
: BD439
: BD441
60
80
Emitter-Base Voltage 5 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 7 A
Base Current 1 A
Collector Dissipation (TC=25°C) 36 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Mi n. Typ. Max. Un it s
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BD439
: BD441
I
CBO
Collector Cut-off Current : BD439
: BD441
I
CES
Collector Cut-off Current : BD439
: BD441
I
h
EBO
FE
Emitter Cut-off Current V
* DC Current Gain : BD439
: BD441
: BD439
: BD441
: BD439
: BD441
(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.8 V
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Current Gain Bandwidth Product V
= 100mA, IB = 0 60
I
C
V
= 60V, IE = 0
CB
V
= 80V, IE = 0
CB
V
= 60V, V
CE
= 80V, V
V
CE
= 5V, IC = 0 1 mA
EB
V
= 5V, IC = 10mA
CE
V
=1V, IC = 500mA
CE
V
= 1V, IC = 2A
CE
BE
BE
= 0
= 0
= 5V, IC = 10mA
CE
= 1V, IC = 2A
V
CE
= 1V, IC = 250mA 3 MHz
CE
80
20
15
40
40
25
15
130
130
140
140
0.58
100
100
100
100
1.5VV
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
BD439/441
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = 1V
VCE = 1V
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC = 10 I
B
IC[A], COLLECTOR CURRENT
1000
100
10
(pF), COLLECTOR BASE CAPACITANCE
CBO
1
C
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
10
IC MAX. (Pulsed)
IC Max. (Continuous)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
10ms
100
1ms
DC
BD439
BD441
1µs
µ
s
10µs
48
42
36
30
24
18
12
[W], POWER DISSIPATION
C
P
6
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
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