Zetex (Now Diodes) ZC830, ZC830A, ZC830B, ZC831, ZC831A Schematic [ru]
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SOT23 SILICON VARI ABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
ZC830/A/B
to
ZC836/A/B
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Rati o
*Low I
R
1
1
Enabling Excellent Phase Noise Performance
Typically <200pA at 25V)
(I
R
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL MAX UNIT
Forward Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS
Reverse Breakd own
Voltage
Reverse Voltag e Leakag e I
Temperature Coefficient
of Capacitance
TUNING CHARACTERISTICS (at T
PART NO
MIN NOM MAX MIN MAX
ZC830A 9.0 10.0 11.0 300 4.5 6.0
ZC831A 13.5 15.0 16.5 300 4.5 6.0
ZC832A 19.8 22.0 24.2 200 5.0 6.5
ZC833A 29.7 33.0 36.3 200 5.0 6.5
ZC834A 42.3 47.0 51.7 200 5.0 6.5
ZC835A 61.2 68.0 74.8 100 5.0 6.5
ZC836A 90.0 100.0 110.0 100 5.0 6.5
Note:
No suffix
Spice parameter data is available upon request for this device
±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
=25°C P
amb
25 V
V
BR
R
η
amb
Nominal Capacitance (pF)
V
=2V, f=1MHz
R
amb
=25°C)
F
tot
j:Tstg
=25°C)
0.2 10 nA VR=20V
0.03 0.04 %/°C VR=3V, f=1MHz
Minimum
Q
@ V
=3V
R
f=50MHz
200 mA
330 mW
-55 to +150 °C
=10µA
I
R
Capacitance Ratio
C
/ C20
2
at f=1MHz
2
3
ZC830/A/B
to
ZC836/A/B
PARTMARKING DETAILS
PART NO PARTMARK PART NO PARTMARK PART NO PARTMAR K
ZC830 J1S ZC830A J1A ZC830B J1B
ZC831 J3S ZC831A J3A ZC831B J3B
ZC832 J4S ZC832A J4A ZC832B J4B
ZC833 J2S ZC833A J2A ZC833B J2B
ZC834 J5S ZC834A J5A ZC834B J5B
ZC835 J6S ZC835A J6A ZC835B J6B
ZC836 J7S ZC836A J7A ZC836B J7B
200
100
836A
10
Diode Capacitance (pF)
1
1
10 100
835A
834A
833A
832A
831A
830A
Reverse Voltage (Volts)
Diode Capaci tance
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