Zetex (Now Diodes) HT3 Schematic [ru]
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - SEPTEMBER 1995 ✪
HT3
PARTMARKING DETAIL - 3T
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
CEX
EBO
h
FE
-90 V
-80 V IC=-2mA
-5 V
-100 nA VCB=-80V, IE=0
-100-5nA
µA
-10
µA
-200 nA VEB=-4V
30
35
50
30
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Output Capacitance C
Transition
Frequency
Switching Times t
V
CE(sat )
V
BE(sat )
obo
f
T
on
t
off
50 MHz IC=-10mA, VCE=-5V
-750 mV IC=-50mA, IB=-5mA
-1.1 V IC=-50mA, IB=-5mA
10 pF VCB=-10V, IE=0, f=1MHz
500
1000nsns
3-60
-90 V
-80 V
-5 V
-100 mA
330 mW
-55 to +150 °C
=-10µA
I
C
=-10µA
I
E
V
=-80V, VBE=0
CE
V
=-80V, VBE=0
CE
=125°C
T
j
V
=-80V,VBE=-0.2V, Tj=85°C
CE
I
=-100µA, V
C
=-1mA, VCE=-1V
I
C
=-10mA, VCE=-1V
I
C
I
=-50mA, VCE=-1V
C
CE
=-1V
f=10MHz
IC=-10ma,
= IB2 = -1ma
I
B1
E
B
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