Zetex (Now Diodes) FSD273TA, ZMDC953TA, ZV950V2TA, ZV952V2TA, ZV953V2TA Schematic [ru]

950 series

SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

ZV950V2, ZV952V2, ZV953V2, ZMDC953, FSD273

Device Description

A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics, low voltage
operation and high Q. Low reverse current ensures very low phase
noiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom

0.5V to 2.5V, making them ideal for 3 volt systems. Available in
miniature surface mount packages.

Features

Close tolerance C-V characteristics

•

• Tuning from 0.5 to 2.5 Volts to suit 3 volt systems

• Low I

• Excellent phase noise performance

• High Q at low voltage

• Miniature surface mount packages

• Band selection for DAB applications - FSD273

(typically 10pA)

R

Applications

•

VCXO and TCXO

•

Wireless communications

•

Pagers

•

Mobile radio

•

Digital Radio receivers

ISSUE 2 - MAY 2002

1

950 series

TUNING CHARACTERISTICS at T

PART CAPACITANCE pF

=0.5V, f=1MHz

V

R

ZV950V2 9.5 6.3 7.8 2.0 250
ZV952V2 19 12.7 15.7 2.0 250
ZV953V2 45 30 37 2.0 200
ZMDC953(DUAL) 45 30 37 2.0 250

ZMDC953 is available banded to tighter capacitance range. This product has the order code FSD273TA.
Measured at VR=1.5V the bands are

Band A = 30.0 to 32.5
Band B = 32.3 to 34.7
Band C = 34.5 to 37.0

Product is supplied in reels. A banded reel will onlycontain a single band. Shipments containing several reels
may have reels in differentbands. It is not possible to supplya specific band as processing affects which bands
are available

=25C

amb

CAPACITANCE pF

VR=1.5V, f=1MHz

Min Min Max Min

CAPACITANCE

RATIO C

0.5/C2.5

f=1MHz

Minimum Q

=0.5V

V

R

f=50MHz

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MAX UNIT

Reverse voltage V
Forward current I
Power dissipation at T
Power dissipation at T

=25⬚C SOD523 P

amb

=25⬚C SOT323 P

amb

R

F
tot
tot

12 V
100 mA
250 mW
300 mW

ELECTRICAL CHARACTERISTICS at Tamb = 25°C

PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Reverse breakdown voltage I
Reverse voltage leakage V

= 10uA 12 V

R

= 8V 0.010 20 nA

R

ISSUE 2 - MAY 2002

2

TYPICAL CHARACTERISTICS

950 series

100

ZV953V2

10

Capacitance (pF)

Tj= 25°C

J

C

f=1MHz

1

0.1 1 10

ZMDC953

ZV952V2

ZV950V2

VRReverse Voltage (V)

Capacitance v Reverse Voltage

1.08

Tj= 85°C

Tj= 55°C

Tj= 25°C

Tj= -15°C

Tj= -55°C

0123456

Normalised Capacitance

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

VRReverse Voltage (V)

Normalised Capacitance v Voltage

1.4

Tj= 25°C

1.2

ZV950V2

1.0

0.8

0.6

ZV952V2

0.4

ZV953V2

0.2

Series Resistance(⍀)

S

R

0.0
10 100 1000

ZMDC953

Frequency (MHz)

Series ResistancevFrequency

1000

800

600

400

/T(p p m/°C )

J

200

DC

0

0123456

VRReverse Voltage (V)

Tj= -55°C to +85°C
f=1MHz

CJTemperature Coefficient v V

R

1000

100

10

Reverse Leakage (pA)

R

I

1

024681012

Leakage v Reverse Voltage

ISSUE 2 - MAY 2002

+85°C

+55°C

+25°C

VRReverse Voltage (V)

3