Zetex (Now Diodes) BST82 Schematic [ru]
SOT23 N CHANNEL ENHANCEMENT
CBE
MODE VERTICAL DMOS FET
I
I
Issue 2 - October 1997
PARTMARKING DETAIL – O2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain Source Voltage V
Drain Source Voltage
(non repetitive peak tp ≤ 2ms)
Continuous Drain Curren t at T
=25°C I
amb
Drain Current Peak I
Gate-Source Voltage V
Max Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
DS
V
DS(sm)
D
DM
GS
D
j:Tstg
-55 to +150 °C
BST82BST82
SOT23
80 V
100 V
175 mA
600 mA
± 20
300 mW
V
ELECTRIAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain Source
Breakdown Voltage
Gate Source
Threshold Voltage
Gate Body Leakage I
Emitter Cut-Off
Current
Static Drain-Source
On-state Resistance
Transfer Admittance | yfs | 150 mS I
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Switching Times T
B
VDSS
V
GS(th)
GSS
I
DSS
R
DS(on)
iss
C
oss
C
rss
on
T
off
80 V
=100µA
I
C
1.5 3.5 V ID=1mA, VDS=V
100 nA VGS=20V
1
710
µA
Ω
VDS=60V
ID=150mA, VGS=5V
=175mA, VDS=5V
D
15 30 pF
13 20 pF
V
=10V, VGS=0V
DS
f=1MHz
36pF
410nsI
410ns
=175mA, VDD=50V
D
V
=0 to 10V
GS
(1) Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator
(2) Sample test
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
GS
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